Nanospherical Surface‐Supported Seeded Growth of Au Nanowires: Investigation on a New Growth Mechanism and High‐Performance Hydrogen Peroxide Sensors

In this paper, a novel strategy with a new growth mechanism for fast and large‐scale growth of Au long nanowires on high‐curvature SiO₂ nanospherical surfaces has been developed. The synthesis includes three steps, i.e., amino modification of SiO₂ nanospheres, Au seed loading on aminated SiO₂ nanospheres and subsequently, Au seed‐mediated nanowire growth on SiO₂ nanospheres. The prepared Au nanowires (Au NWs) (exhibit long length, high aspect ratio, and good flexibility, and can naturally form the dense nanowire film, which is promising as a stable conductive electrode. In addition, the effect of synthetic conditions such as reactant feeding order, Au seeds and SiO₂@Au seeds on the morphology of Au nanostructures (nanowires, nanoteeth, and nanoflowers) has been investigated. It is found that Au seeds and high‐curvature SiO₂ nanospherical surfaces are necessary conditions for the successful preparation of Au NWs and nanowire films. The different growth mechanisms for Au NWs and nanoteeth have been proposed and discussed. Moreover, the novel nonenzymatic H₂O₂ sensor based on Au NWs exhibits much enhanced performance such as higher sensitivity, stability, and selectivity, wider linear range and lower detection limit, compared with that of Au nanoparticles‐based H₂O₂ sensor.     

Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate

Surface‐diffusion‐induced spontaneous Ga incorporation process is demonstrated in ZnO nanowires grown on GaN substrate. Crucially, contrasting distributions of Ga atoms in axial and radial directions are experimentally observed. Ga atoms uniformly distribute along the ～10 μm long ZnO nanowire and show a rapidly gradient distribution in the radial direction, which is attributed substantially to the difference between surface and volume diffusion. The understanding on the incorporation process can potentially modulate doping and properties in semiconductor nanomaterials.

     

Grain boundary,triple junction and quadruple point mobility controlled normal grain growth

Reduction in stored free energy provides the thermodynamic driving force for grain and bubble growth in polycrystals and foams. Evolution of polycrystalline networks exhibit the additional complication that grain growth may be controlled by several kinetic mechanisms through which the decrease in network energy occurs. Polyhedral boundaries, triple junctions (TJs), and quadruple points (QPs) are the geometrically distinct elements of three dimensional networks that follow Plateau’s rules, provided that grain growth is limited by diffusion through, and motion of, cell boundaries. Shvindlerman and co-workers have long recognized the kinetic influences on polycrystalline grain growth of network TJs and QPs. Moreover, the emergence of interesting polycrystalline nanomaterials underscored that TJs can indeed influence grain growth kinetics. Currently there exist few detailed studies concerned either with network distributions of grain size, number of faces per grain, or with ‘grain trajectories’, when grain growth is limited by the motion of its TJs or QPs. By contrast there exist abundant studies of classical grain growth limited by boundary mobility. This study is focused on a topological/geometrical representation of polycrystals to obtain statistical predictions of the grain size and face number distributions, as well as growth ‘trajectories’ during steady-state grain growth. Three limits to grain growth are considered, with grain growth kinetics controlled by boundary, TJ, and QP mobilities.     

High pressure studies using two-stage diamond micro-anvils grown by chemical vapor deposition

Ultra-high static pressures have been achieved in the laboratory using a two-stage micro-ball nanodiamond anvils as well as a two-stage micro-paired diamond anvils machined using a focused ion-beam system. The two-stage diamond anvils’ designs implemented thus far suffer from a limitation of one diamond anvil sliding past another anvil at extreme conditions. We describe a new method of fabricating two-stage diamond micro-anvils using a tungsten mask on a standard diamond anvil followed by microwave plasma chemical vapor deposition (CVD) homoepitaxial diamond growth. A prototype two-stage diamond anvil with 300?µm culet and with a CVD diamond second stage of 50?µm in diameter was fabricated. We have carried out preliminary high pressure X-ray diffraction studies on a sample of rare-earth metal lutetium sample with a copper pressure standard to 86?GPa. The micro-anvil grown by CVD remained intact during indentation of gasket as well as on decompression from the highest pressure of 86?GPa.     

掺杂材料对激光等离子体受激布里渊散射的影响

研究了激光等离子体背向受激布里渊散射光谱及反射率。当小能量短脉冲激光入射平面靶时，激光等离子体发展不充分，受激布里渊散射光谱结构相似，受激布里渊散射的增长主要受等离于体尺度的影响，随靶材料的有效原子序数的增加，等离子体尺度变小，受激布里渊散射反射率减少。     

Grain Growth in Polycrystalline Thin Films of Semiconductors

Grain growth in thin films is usually abnormal, leading not only to an increase in the average grain size, but also to an evolution in the shape of the grain size distribution and to an evolution in the distribution of grain orientations. The latter can be driven by surface, interface or strain energy minimization, depending on film and substrate properties and on deposition conditions, and can lead to different final textures depending on which energy dominates.In semiconductor films, as in other materials, grain growth stagnation coupled with texture-selective driving forces leads to secondary grain growth, the rate of which is higher in thinner films. Self ion-bombardment enhances the rate of pre-stagnation grain growth, and doping of Si with electron donor leads to enhanced pre-stagnation grain growth as well as surface-energy-driven secondary grain growth. The effects of ion-bombardment and dopants on grain growth in Si can be understood in terms of associated increases in point defect concentrations and the effects of point defects on grain boundary mobilities.     

Noise-assisted mound coarsening in epitaxial growth

Two types of mechanisms are proposed for mound coarsening during unstable epitaxial growth: stochastic, due to deposition noise, and deterministic, due to mass currents driven by surface energy differences. Both yield the relation H=(RWL)² between the typical mound height W, mound size L, and the film thickness H. An analysis of simulations and experimental data shows that the parameter R saturates to a value which discriminates sharply between stochastic () and deterministic () coarsening. We derive a scaling relation between the coarsening exponent 1/z and the mound-height exponent which, for a saturated mound slope, yields . Received: 11 November 1997 / Revised in final form: 28 November 1997 / Accepted: 28 November 1997     

Control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells and selective epitaxy on patterned substrates

Two approaches to control the position and the size of semiconductor islands are proposed. The first method is to perform overgrowth on a cleaved edge of strained multiple quantum wells which acts as a substrate with a periodically modulated lattice constant, thus inducing a periodic strain to the overgrown layer. The second method is to selectively grow islands in specific windows defined by electron beam lithography. Both the methods are applied to the Ge/Si system and the controllability of the Ge island formation is demonstrated.     

Influence of substrate temperature on the electrical behaviour of zinc stannate thin films deposited by electron beam evaporation technique

Summary  A series of zinc stannate (Zn₂ SnO₄) thin films were prepared at four different substrate temperatures; namely, room-temperature (25°C), 50°C, 100°C and 200°C. Direct-current resistivity measurements were performed on these samples in the temperature range from room temperature (∼290 K) up to about 500 K. A phase transition (of positive temperature coefficient (PTC) of resistance) was observed in the thin film grown at room temperature at about 385 K. Other investigated samples showed a semiconducting behaviour of three distinct conduction mechanisms extending from intrinsic to thermal freeze-out conduction. The width of the band gapE _g was found to depend on the substrate temperature and was discussed in terms of a formation of a band tailing. Thermal freeze-out was dominant at the lower temperature region. On leave from Department of Physics, Faculty of Science, Alexandria University, Alexandria, Egypt.