Copper (50 MeV) and Oxygen (84 MeV) Ion Irradiation Probed Thermal,Structural and Optical Behavior of Polyethylene Terephthalate

Polyethylene terephthalate (PET) films of 50?μm thickness were exposed to swift-heavy 50?MeV copper and 84?MeV oxygen ions, with fluence varying from 1?×?10¹¹ to 1?×?10¹³ ions cm^?2. Differential scanning calorimetry (DSC), X-ray diffraction (XRD) and Fourier-transform infrared (FTIR) and UV-visible spectroscopic techniques were used to characterize the irradiated samples. The XRD and DSC analysis indicated the loss of crystallinity during/after the irradiation. The FTIR spectra revealed the formation of alkyne end groups, C═C groups and structural deformation with increase of ion fluence. Considerable reduction in the value of the optical bandgap was inferred from the study of the UV-visible absorption curves.     

激光激发水中产生超声波的实验研究

采用压电陶瓷水听器研究了Nd：YAG脉冲激光激发水中产生瞬态超声波的特性,给出了声压信号随距离的变化关系。研究结果表明：用激光产生水下声波是完全可行的。当观测点与光击穿区的距离r远大于柱体长度时,垂直于光传播方向的激光瞬态超声波幅值与r成反比;当观测点与光击穿区的距离r很小时,垂直于光传播方向的声压幅值与产成反比。此外,当激光入射角度发生变化,超声脉冲的幅值也随之发生变化,其幅值在激光束垂直入射的时候最大。     

二维均匀流作用的线性表面张力-重力短峰波解析解

考虑二维均匀流的作用,寻找到有限水深线性表面张力-重力短峰波系统的解析解.进而从中发现广义Doppler频移关系和广义色散关系.而且,广义本征频率直接与均匀流相关,具有对偶值,富于变化性. 关键词： 表面张力-重力短峰波 二维均匀流 广义Doppler频移关系 广义色散关系     

用于测量材料高温动态力学性能的SHPB技术

讨论了高温下分离式Hopkinson压杆(SHPB)实验的两种方案:单独加热试样并快速对杆与同时加热试样和杆再修正温度梯度的影响。前者避免了杆被加热但是操作复杂,后者简单稳定。为了分析后者温度梯度的影响设计了一个简化模型,采用数值计算进行修正,提出了精度适当的假设,并且进行了实验验证。测量了试件和杆一起加热时杆上的温度分布,证实计算采用的温度分布是合理的。据此得到的专用于材料高温动态力学性能测试的SHPB数据处理公式简单实用,便于推广使用。     

Obituary: Professor Dr.-Ing. Justus Mühlenpfordt

Abstract

The dose-dependent isotope fractionation during decarboxylation (¹³C/¹²C) amplifies the radiation effect in the relatively low dose range. The fractionation of the nitrogen isotopes during deamination (¹⁵N/¹⁴N) at the dose of 17 Gy was found to be smaller than that of decarboxylation.     

Effects of laser irradiation on optical properties of a-Se100−x Te x thin films

The effect of laser irradiation on the optical properties of thermally evaporated Se_100?x Te _x (x=8, 12, 16) chalcogenide thin films has been studied. The result shows that the irradiation causes a shift in the optical gap. The results have been analyzed on the basis of laser irradiation-induced defects in the film. The width of the tail of localized state in the band gap has been evaluated using the Urbach edge method. As the irradiation time increases, the values of the optical energy gap for all compositions decrease, while tail energy width increases. It is also observed that the optical energy gap decreases with increasing Te content in the alloy. These changes are a consequence of an increment in disorder produced by laser irradiation in the amorphous structure of thin film.     

Recombination and transfer annealing of neutron irradiated and 60Co(II)-doped Ba/CoEDTA/2

Abstract

Kinetics of post recoil isothermal annealing of crystalline Ba/CoEDTA/₂ irradiated in a nuclear reactor or doped by ⁶⁰Co(II) reveals a combination of a monotonous and an oscillatory part amounting 1-3% of the total. The permanent recombination has been found to consist of two first order processes leading to the octahedral structure of the six-co-ordinated ⁶⁰Co(III).     

Recovery of low temperature electron irradiation-induced damage in n-type gaas

Undoped n-type GaAa was irradiated near 5 and 77 °K with electrons having incident energies between 0.46 and 1.30 MeV. The recovery of the electrical resistivity and the Hall coefficient upon annealing from 4 to 520 °K was monitored. Changes which occurred upon annealing below 200 °K could be reversed by ionizing radiation. A small amount of irreversible ionization-induced recovery was observed after irradiation near 5 °K. Major irreversible recovery stages were centered near 235 (stage I), 280 (stage II) and 520 °K (stage III). Recovery in stage I and II obeyed first order kinetics. The activation energies of stages I and II were determined as 0.72 and 0.83 eV, respectively. The carrier concentration changes per unit irradiation dose corresponding to the three recovery stages differed in their energy dependence indicating that the defects which are removed in stage III have the lowest threshold energy. The carrier concentration changes per unit irradiation dose corresponding to stages I and III were higher for irradiation near 5 °K than for irradiation near 77 °K.     

Radiation effect studies in single crystal of Trifluoroacetyl-α-Aminoisobutyric acid

In this study, electron paramagnetic resonance of γ-irradiated single crystals of N-Trifluoroacetyl-α-amino isobutyric acid (F₃Ac-Aib-OH) was investigated at room temperature and analyzed for different orientations of the crystal in the magnetic field. The paramagnetic species in N-Trifluoroacetyl-α-aminoisobutyric acid was attributed to the ?F₂-R radical (R= CONHC(CH₃)COOH). Hyperfine coupling constants and g value were also determined. In addition, the single crystal of F₃Ac-Aib-OH was UV-irradiated and paramagnetic species formed was studied at room temperature. The effects of gamma irradiation on fluoroamino acid and stability were discussed.