GaN高电子迁移率晶体管强电磁脉冲损伤效应与机理

提出了一种新型GaN异质结高电子迁移率晶体管在强电磁脉冲下的二维电热模型,模型引入材料固有的极化效应,高场下电子迁移率退化、载流子雪崩产生效应以及器件自热效应,分析了栅极注入强电磁脉冲情况下器件内部的瞬态响应,对其损伤机理和损伤阈值变化规律进行了研究.结果表明,器件内部温升速率呈现出"快速-缓慢-急剧"的趋势.当器件局部温度足够高时(2000 K),该位置热电子发射与温度升高形成正反馈,导致温度急剧升高直至烧毁.栅极靠近源端的柱面处是由于热积累最易发生熔融烧毁的部位,严重影响器件的特性和可靠性.随着脉宽的增加,损伤功率阈值迅速减小而损伤能量阈值逐渐增大.通过数据拟合得到脉宽τ与损伤功率阈值P和损伤能量阈值E的关系.     

高功率微波作用下高电子迁移率晶体管的损伤机理

本文针对高电子迁移率晶体管在高功率微波注入条件下的损伤过程和机理进行了研究,借助SentaurusTCAD仿真软件建立了晶体管的二维电热模型,并仿真了高功率微波注入下的器件响应.探索了器件内部电流密度、电场强度、温度分布以及端电流随微波作用时间的变化规律.研究结果表明,当幅值为20 V,频率为14.9 GHz的微波信号由栅极注入后,器件正半周电流密度远大于负半周电流密度,而负半周电场强度高于正半周电场.在强电场和大电流的共同作用下,器件内部的升温过程同时发生在信号的正、负半周内.又因栅极下靠近源极侧既是电场最强处,也是电流最密集之处,使得温度峰值出现在该处.最后,对微波信号损伤的高电子迁移率晶体管进行表面形貌失效分析,表明仿真与实验结果符合良好.     

Low-velocity impact damage characterization of carbon fiber reinforced polymer (CFRP) using infrared thermography

Carbon fiber reinforced polymer (CFRP) after low-velocity impact is detected using infrared thermography, and different damages in the impacted composites are analyzed in the thermal maps.The thermal conductivity under pulse stimulation, frictional heating and thermal conductivity under ultrasonic stimulation of CFRP containing low-velocity impact damage are simulated using numerical simulation method. Then, the specimens successively exposed to the low-velocity impact are respectively detected using the pulse infrared thermography and ultrasonic infrared thermography. Through the numerical simulation and experimental investigation, the results obtained show that the combination of the above two detection methods can greatly improve the capability for detecting and evaluating the impact damage in CFRP. Different damages correspond to different infrared thermal images. The delamination damage, matrix cracking and fiber breakage are characterized as the block-shape hot spot, line-shape hot spot, and “

” shape hot spot respectively.     

双重孔隙渗流作用井眼围岩损伤力学模型研究

考虑双重介质建立了井眼围岩力学模型,考虑井眼围岩岩体为孔隙、裂缝双重介质,将围岩区域分为破坏区、损伤区和弹性区,建立双重介质渗流作用下的井壁围岩不同区域的损伤力学计算模型和井眼损伤区域的计算方法,计算结果表明理论计算模型与有限元模拟结果吻合较好.     

A Supramolecular Gel Approach to Minimize the Neural Cell Damage during Cryopreservation Process

The storage method for living cells is one of the major challenges in cell‐based applications. Here, a novel supramolecular gel cryopreservation system (BDTC gel system) is introduced, which can observably increase the neural cell viability during cryopreservation process because this system can (1) confine the ice crystal growth in the porous of BDTC gel system, (2) decrease the amount of ice crystallization and cryopreservation system's freezing point, and (3) reduce the change rates of cell volumes and osmotic shock. In addition, thermoreversible BDTC supramolecular gel is easy to be removed after thawing so it does not hinder the adherence, growth, and proliferation of cells. The results of functionality assessments indicate that BDTC gel system can minimize the neural cell damage during cryopreservation process. This method will be potentially applied in cryopreservation of other cell types, tissues, or organs and will benefit cell therapy, tissue engineering, and organs transplantation.

     

乙腈-水和乙二醇-水均相溶液中光诱导杜醌激发三重态与色氨酸、酪氨酸的氢原子转移反应

本文用激光闪光光解技术研究了光诱导生物醌杜醌激发三重态(³DQ^*)和色氨酸(Trp)与酪氨酸(Tyr)在乙腈-水(MeCN-H₂O)及乙二醇-水(EG-H₂O)均相溶液中的光化学反应,分析了反应的机理,并基于Stern-Volmer方法测量了反应速率常数. 光解DQ体系可以生成³DQ^*,³DQ^*与Trp、Tyr发生的氢原子转移反应占主导地位. 对于DQ/Trp/MeCN-H₂O和DQ/Trp/EG-H₂O溶液,³DQ^*与Trp反应生成杜醌中性自由基DQH^·、以碳为中心的色氨酸中性自由基Trp^·/NH和以氮为中心的色氨酸中性自由基Trp/N^·. 对于DQ/Tyr/MeCN-H₂O和DQ/Tyr/EG-H₂O溶液,³DQ^*与Tyr反应生成DQH^·和酪氨酸中性自由基Tyr/O^·. ³DQ^*与Trp、Tyr的氢原子转移反应速率常数都在10⁹ L·mol^-1·s^-1量级,反应近似受扩散控制. MeCN/H₂O均相溶液中³DQ^*与Trp、Tyr的反应速率常数要明显高于EG/H₂O均相溶液中的反应速率常数,这与Stokes-Einstein方程定性一致.     

Effects of surface damage on critical current density in MgB2 thin films

We investigated the influence of surface damage on the critical current density (J_c) of MgB₂ thin films via 140-keV Co-ion irradiation. The J_c(H) of the surface-damaged MgB₂ films was remarkably improved in comparison with that of pristine films. The strong enhancement of J_c(H) caused by a surface damage in MgB₂ films can be ascribed to additional point defects along with an atomic lattice displacement introduced through low-energy Co-ion irradiation, which is consistent with the change in the pinning mechanism, from weak collective pinning to strong plastic pinning. The irreversible magnetic field (H_irr) at 5 K for surface-damaged MgB₂ films with a thickness of 850 and 1300 nm was increased by a factor of approximately 2 compared with that of a pristine film. These results show that the surface damage produced by low energy ion irradiation can serve as an effective pinning source to improve J_c(H) in a MgB₂ superconductor.     

Hoechst-naphthalimide dyad with dual emissions as specific and ratiometric sensor for nucleus DNA damage

A ratiometric fluorescent sensor (Hoe-NI) was developed for high specific nucleus labeling and monitoring of nuclear DNA damage in living cells.