多层介质膜脉冲宽度压缩光栅与超短脉冲作用时的性能分析

基于啁啾脉冲放大技术的超短脉冲激光系统是提供超快、超强激光的重要途径，具有良好输出波形和高损伤阈值的多层介质膜脉冲宽度压缩光栅是获得高峰值功率脉冲激光的关键. 基于傅里叶谱变换方法和严格模式理论，分析了多层介质膜光栅(MDG)在超短脉冲作用下的光学特性. 结果表明，当MDG的反射带宽小于具有高斯分布的入射脉冲的频谱宽度时，-1级反射脉冲呈非对称高斯分布，其前沿出现振荡，并且-1级反射脉冲能量开始剧烈下降. 讨论了MDG结构参数对其反射带宽的影响. 分析了MDG与超短脉冲作用时的近场光分布，对提高其抗激光损 关键词： 脉冲压缩光栅 傅里叶谱变换 模式理论 损伤阈值     

短脉冲激光辐照下SiO2损伤微观机理简化模型

 从电子密度速率方程出发，建立短脉冲激光辐照下SiO₂材料中导带电子增长简化模型，计算了SiO₂中光致电离速率和电子雪崩速率，得到SiO₂激光损伤阈值与脉冲宽度的关系，计算分析了光致电离和碰撞电离两种电离机制在导带电子累积过程中的不同作用。结果表明：脉冲较长，碰撞电离几乎能提供全部的导带电子，激光损伤阈值与脉宽的0.5次方成正比；脉冲较短时，导带电子主要由碰撞电离产生，光致电离提供碰撞电离的初始电子，激光损伤阈值随着脉宽的减小，先增加后减小。     

高功率脉冲激光对阶跃折射率多模光纤损伤机理

 理论分析和模拟仿真研究了激光点火系统中光纤端面损伤、光纤初始输入段损伤和光纤内部损伤机理。结果显示：端面损伤主要是由光纤端面的杂质和缺陷引起；光纤初始输入段损伤是由光束的初次反射造成光纤局部激光能量密度增大引起的；光纤内部体损伤主要由于激光自聚焦效应引起损伤和光纤受到的意外应力产生微小碎片，吸收激光能量，引起光纤局部损伤。给出了激光点火系统中提高光纤损伤阈值的一般方法，主要包括光纤端面处理、设计合理的激光注入耦合装置。     

Damage spreading on networks: Clustering effects

The damage spreading of the Ising model on three kinds of networks is studied with Glauber dynamics. One of the networks is generated by evolving the hexagonal lattice with the star-triangle transformation. Another kind of network is constructed by connecting the midpoints of the edges of the topological hexagonal lattice. With the evolution of these structures, damage spreading transition temperature increases and a general explanation for this phenomenon is presented from the view of the network. The relationship between the transition temperature and the network measure-clustering coefficient is set up and it is shown that the increase of damage spreading transition temperature is the result of more and more clustering of the network. We construct the third kind of network-random graphs with Poisson degree distributions by changing the average degree of the network. We show that the increase in the average degree is equivalent to the clustering of nodes and this leads to the increase in damage spreading transition temperature.      

Radiation damage to protein specimens from electron beam imaging and diffraction: a mini‐review of anti‐damage approaches,with special reference to synchrotron X‐ray crystallography

Recent research progress using X‐ray cryo‐crystallography with the photon beams from third‐generation synchrotron sources has resulted in recognition that this intense radiation commonly damages protein samples even when they are held at 100 K. Other structural biologists examining thin protein crystals or single particle specimens encounter similar radiation damage problems during electron diffraction and imaging, but have developed some effective countermeasures. The aim of this concise review is to examine whether analogous approaches can be utilized to alleviate the X‐ray radiation damage problem in synchrotron macromolecular crystallography. The critical discussion of this question is preceded by presentation of background material on modern technical procedures with electron beam instruments using 300–400 kV accelerating voltage, low‐dose exposures for data recording, and protection of protein specimens by cryogenic cooling; these practical approaches to dealing with electron radiation damage currently permit best resolution levels of 6 Å (0.6 nm) for single particle specimens, and of 1.9 Å for two‐dimensional membrane protein crystals. Final determination of the potential effectiveness and practical value of using such new or unconventional ideas will necessitate showing, by experimental testing, that these produce significantly improved protection of three‐dimensional protein crystals during synchrotron X‐ray diffraction.     

Fundamentals and applications of ion-ion plasmas

Ion-ion plasmas can form in the late afterglow of pulsed discharges or downstream of continuous wave discharges in electronegative gases. In ion-ion plasmas, negative ions replace electrons as the negative charge carriers. In the absence of electrons, ion-ion plasmas behave quite differently compared to conventional electron-ion plasmas. Application of a radio frequency bias to a substrate immersed in an ion-ion plasma can be used to extract alternately positive and negative ions, thereby minimizing charging on device features during micro-device fabrication. Ion-ion plasmas are also important in negative ion sources, dusty plasmas, and the D-layer of the earth's atmosphere.     

Optimal conditions for submonolayer nanoisland growth in ion beam assisted deposition

We study the optimal conditions for nanoisland growth in ion beam assisted deposition (IBAD). This situation occurs when adatom islands remain small enough to prevent the onset of three-dimensional growth, while at the same time preventing ion-induced surface erosion. To this end, we develop a rate equation model of IBAD, which embodies continuous deposition of adatoms and creation of vacancies, recombination of vacancies at adatom island edges, as well as recombination of adatoms at vacancy island edges. These rate equations are solved by numerical simulations based on the particle coalescence method. To determine the optimal growth condition, we find the largest mean size of the vacancy islands leading to their survival. We show that at this onset between the rough and smooth layer-by-layer growth regimes there is a simple exponential relation between the largest size of the vacancy islands and the external control parameters of the growth.     

Optimization of thin-film design for multi-layer dielectric grating

Thin-film design used to fabricate multi-layer dielectric (MLD) gratings should provide high transmittance during holography exposure, high reflectance at use wavelength and sufficient manufacturing latitude of the grating design making the MLD grating achieve both high diffraction efficiency and low electric field enhancement. Based on a (HLL)⁹H design comprising of quarter-waves of high-index material and half-waves of low-index material, we obtain an optimum MLD coating meeting these requirements by inserting a matching layer being half a quarter-wave of Al₂O₃ between the initial design and an optimized HfO₂ top layer. The optimized MLD coatings exhibits a low reflectance of 0.017% under photoresist at the exposure angle of 17.8° for 413 nm light and a high reflectance of 99.61% under air at the use angle of 51.2° for 1053 nm light. Numerical calculation of intensity distribution in the photoresist coated on the MLD film during exposure shows that standing-wave patterns are greatly minimized and thus simulation profile of photoresist gratings after development demonstrates smoother shapes with lower roughness. Furthermore, a MLD gratings with grooves etched into the top layer of this MLD coating provides a high diffraction efficiency of 99.5% and a low electric field enhancement ratio of 1.53. This thin-film design shows perfect performances and can be easily fabricated by e-beam evaporation.     

Photoluminescence and gamma-ray irradiation of SrAl2O4:Euand Y2O3:Eu phosphors

Y₂O₃:Eu³⁺ phosphor is a very attractive material for use as a red phosphor in many fields. SrAl₂O₄:Eu²⁺ belongs to long lasting phosphor (LLP) and it is a useful bluish-green luminescence material, which can also be a promising candidate as a simple and easy-to-use radiation detection element for visual display of two dimensional radiation distributions. In the present study, both these two kinds of phosphors were synthesized using high temperature solid state reactions. In our work, the influence of gamma-ray irradiation on the properties of these two kinds of phosphors was studied by comparing photoluminescence, brightness and the decay curve of unirradiated and gamma-ray-irradiated samples. Conclusions from the present work can be briefly summarized as follows. In irradiated samples, the brightness is decreased without sensible change in the wavelength distribution of the luminescence spectrum and in the decay kinetic upon gamma exposure. Moreover, the emission due to Eu³⁺→Eu²⁺ conversion in Y₂O₃:Eu³⁺ phosphors was not observed in our sample after irradiation to high exposure. Also the brightness of SrAl₂O₄:Eu²⁺ phosphor turned out to decrease after the exposition to ionizing radiation while the luminescence wavelength distribution remained unchanged. The reason for the effect of gamma-ray irradiation on the properties of phosphors is also discussed in the paper.     

X射线显微术

综述了Ｘ射线显微术的基本原理，成像模式和技术及其在生命科学，材料科学等方面应用的新进展，同时简述了Ｘ线射显微术应用过程中应注意的几个问题。