Study on hydrogen sulfide plasma passivation of 790-nm laser diode cavity surface

In order to improve the optical properties of the Ⅲ-Ⅴ laser diodes(LDs) by means of H2S plasma passivation technology,H2S plasma passivation treatment is performed on the GaAs(110) surface.The optimum passivation conditions obtained are 60-W radio frequency(RF)power and 20-min duration.So the laser cavity surfaces axe treated under the optimum passivation conditions.Consequently,compared with unpassivated lasers with only AR/HR-coatings,the catastrophic optical damage (COD) threshold value of the passivated lasers by H2S plasma treatment is increased by 33%,which is almost the same as that of (NH4)2Sx treatment.And the life-test experiment has demonstrated that this passivation method is more stable than(NH4)2Sx solution wet-passivated treatment.     

高功率二极管激光器失效特性研究

利用统计分析手段,对高功率二极管激光器封装中各工艺环节引起器件失效的原因进行了分析和归类.根据几种失效模式的分析结果,焊接空隙、结短路、腔面退化是引起高功率DL失效的主要模式,针对高功率二极管激光器失效的主要模式,对焊料沉积夹具及焊接工艺参数进行了改进和优化,大大提高了封装工艺水平,使封装的器件成品率由原来的77%提高到了85%以上.     

Helium and point defect accumulation: (i) microstructure and mechanical behaviour

Ferritic/martensitic (F/M) steels are good candidate structural materials for the future fusion reactors and spallation sources. However, irradiation of steels is known to produce hardening, loss of ductility, shift in ductile to brittle transition temperature (DBTT) and reduction of fracture toughness and creep resistance starting at low doses. Helium (He), produced by transmutation during the irradiation, also impacts mechanical properties. Numerous experimental and theoretical studies on the evolution of the microstructure of steels under irradiation have been conducted until now. We review the effect of irradiation-induced point defects and in particular of He on the mechanical properties of F/M steels. To cite this article: R. Schäublin et al., C. R. Physique 9 (2008).     

短脉冲激光辐照下SiO2损伤微观机理简化模型

 从电子密度速率方程出发，建立短脉冲激光辐照下SiO₂材料中导带电子增长简化模型，计算了SiO₂中光致电离速率和电子雪崩速率，得到SiO₂激光损伤阈值与脉冲宽度的关系，计算分析了光致电离和碰撞电离两种电离机制在导带电子累积过程中的不同作用。结果表明：脉冲较长，碰撞电离几乎能提供全部的导带电子，激光损伤阈值与脉宽的0.5次方成正比；脉冲较短时，导带电子主要由碰撞电离产生，光致电离提供碰撞电离的初始电子，激光损伤阈值随着脉宽的减小，先增加后减小。     

Damage spreading on networks: Clustering effects

The damage spreading of the Ising model on three kinds of networks is studied with Glauber dynamics. One of the networks is generated by evolving the hexagonal lattice with the star-triangle transformation. Another kind of network is constructed by connecting the midpoints of the edges of the topological hexagonal lattice. With the evolution of these structures, damage spreading transition temperature increases and a general explanation for this phenomenon is presented from the view of the network. The relationship between the transition temperature and the network measure-clustering coefficient is set up and it is shown that the increase of damage spreading transition temperature is the result of more and more clustering of the network. We construct the third kind of network-random graphs with Poisson degree distributions by changing the average degree of the network. We show that the increase in the average degree is equivalent to the clustering of nodes and this leads to the increase in damage spreading transition temperature.      

Radiation damage to protein specimens from electron beam imaging and diffraction: a mini‐review of anti‐damage approaches,with special reference to synchrotron X‐ray crystallography

Recent research progress using X‐ray cryo‐crystallography with the photon beams from third‐generation synchrotron sources has resulted in recognition that this intense radiation commonly damages protein samples even when they are held at 100 K. Other structural biologists examining thin protein crystals or single particle specimens encounter similar radiation damage problems during electron diffraction and imaging, but have developed some effective countermeasures. The aim of this concise review is to examine whether analogous approaches can be utilized to alleviate the X‐ray radiation damage problem in synchrotron macromolecular crystallography. The critical discussion of this question is preceded by presentation of background material on modern technical procedures with electron beam instruments using 300–400 kV accelerating voltage, low‐dose exposures for data recording, and protection of protein specimens by cryogenic cooling; these practical approaches to dealing with electron radiation damage currently permit best resolution levels of 6 Å (0.6 nm) for single particle specimens, and of 1.9 Å for two‐dimensional membrane protein crystals. Final determination of the potential effectiveness and practical value of using such new or unconventional ideas will necessitate showing, by experimental testing, that these produce significantly improved protection of three‐dimensional protein crystals during synchrotron X‐ray diffraction.     

Fundamentals and applications of ion-ion plasmas

Ion-ion plasmas can form in the late afterglow of pulsed discharges or downstream of continuous wave discharges in electronegative gases. In ion-ion plasmas, negative ions replace electrons as the negative charge carriers. In the absence of electrons, ion-ion plasmas behave quite differently compared to conventional electron-ion plasmas. Application of a radio frequency bias to a substrate immersed in an ion-ion plasma can be used to extract alternately positive and negative ions, thereby minimizing charging on device features during micro-device fabrication. Ion-ion plasmas are also important in negative ion sources, dusty plasmas, and the D-layer of the earth's atmosphere.