直线加速器驻波腔中的瞬态束流负载效应

在高能加速器中, 随着单个束团和束团串中电荷量的提高, 当粒子束穿过加速腔的时候, 感应出的瞬态束流负载电压也越来越高. 但是, 在通常分析束流负载的时候, 往往对稳态束流负载研究的比较多, 而对瞬态束流负载的研究要相对少一些. 本文首先对束流负载的瞬态特性和束团穿过加速腔时高频源所看到谐振腔谐振频率的变化方式进行了分析, 然后又对两种情况下谐振腔的最优失谐条件进行了讨论, 并给出了相应的解析公式. 在第1种情况下, 当粒子束穿过加速腔的时候, 谐振腔的自然谐振频率能够及时地得到调节, 从而使高频源的电流与谐振腔的腔压同相, 以提高高频源的效率; 在第2种情况下, 当粒子束穿过加速腔的时候, 谐振腔的自然谐振频率保持不变, 不能被调节. 最后, 还对BEPCⅡ现有预注入器的预聚束腔、BEPCⅡ未来预注入器的两个次谐波聚束腔中的瞬态束流负载效应进行了分析.     

Characteristics of Ti0.97Co0.03O2:Sb0.01 dilute magnetic semiconducting thin films deposited at 500 °C by pulsed laser deposition

Epitaxial Ti_0.97Co_0.03O₂:Sb_0.01(TCO:Sb) films were deposited on R-Al₂O₃ (1 1 0 2) substrates at 500 °C in various deposition pressures by pulsed laser deposition. The solubility of cobalt within the films increases with decreasing deposition pressure at a deposition temperature of 500 °C. The TCO:Sb films deposited at 5×10⁻⁶ Torr exhibit a p-type anomalous Hall effect having a hole concentration of 6.1×10²²/cm³ at 300 K. On the other hand, films deposited at 4×10⁻⁴ Torr exhibits an n-type anomalous Hall effect having an electron concentration of about 1.1×10²¹/cm³. p- or n-type DMS characteristics depends on the change of the structure of TCO:Sb films and the solubility of Co is possible by controlling the deposition pressure.     

Beam Combination using Stimulated Brillouin Scattering for the Ultimate High Power-Energy Laser System Operating at High Repetition Rate over 10 Hz for Laser Fusion Driver

After the laser was invented in 1960, a phase conjugation mirror has been respected to be the most fantastic one for the laser resonator composition because it can compensate any distortions of the laser beams occurred by the many inhomogenuities of the laser media and optical components. Among the many phase conjugation configurations, the stimulated Brillouin scattering phase conjugation mirror is the most simple one and many researchers have tried to utilize it to develop high power/energy laser systems. For realizing a high energy/power laser system the thermal problem is the most difficult to solve, and some researchers suggested a beam combination technique to reduce the thermal load of the big laser media to many small sized ones. To accomplish the beam combination using stimulated Brillouin scattering phase conjugation mirrors (SBS-PCMs), it is necessary to lock/control the phases of the SBS-PCMs. And some researchers have developed several ways for it, but they can lock the phases of a limited number of beams overlapped at the foci less than 5, or lock the phases by back-seeding technique but it loses the phase conjugation characteristics. For realization of the laser fusion driver, it is necessary to combine more than 10 or 100 beams. And the authors have developed recently a new phase controlling/locking technique which is isolated and independent totally from other beams and it can be applied to an unlimited number of beams in principle.     

Smaller Output Beam Divergence in the Slowly Opened Q-Switch Operation

The mechanism of the slowly opened Q-switch operation was investigated thoroughly. Maximum energy extraction from the resonator could be optimized, and the smallest output beam divergence could be achieved. In this article, we present a detailed analysis that has numerically verified the mode-selection mechanism in the slowly opened Q-switch operation, and the degree of the smaller output laser beam divergence that has been achieved. The mechanism of the slowly opened Q-switch operation is the inherent advantage of the passive saturable absorber in this operation. We can use the maximum energy extraction and the smallest output beam divergence results of the slowly opened Q-switch operation to design and optimize various passive saturable absorbers: plastic dye sheets, LiF:F₂⁻ color center crystals, Cr4⁺: YAG crystals, RG1000 color glass filters, and the single crystal semiconductor saturable absorber wafers that are in developed in our microchip laser systems.     

Synthesis and application as polymer electrolyte of hyperbranched polyether made by cationic ring‐opening polymerization of 3‐{2‐[2‐(2‐hydroxyethoxy)ethoxy]ethoxymethyl}‐3′‐methyl‐oxetane

A novel cyclic ether monomer 3‐{2‐[2‐(2‐hydroxyethoxy)ethoxy]ethoxy‐methyl}‐3′‐methyloxetane (HEMO) was prepared from the reaction of 3‐hydroxymethyl‐3′‐methyloxetane tosylate with triethylene glycol. The corresponding hyperbranched polyether (PHEMO) was synthesized using BF₃·Et₂O as initiator through cationic ring‐opening polymerization. The evidence from ¹H and ¹³C NMR analyses revealed that the hyperbranched structure is constructed by the competition between two chain propagation mechanisms, i.e. active chain end and activated monomer mechanism. The terminal structure of PHEMO with a cyclic fragment was definitely detected by MALDI‐TOF measurement. A DSC test implied that the resulting polyether has excellent segment motion performance potentially beneficial for the ion transport of polymer electrolytes. Moreover, a TGA assay showed that this hyperbranched polymer possesses high thermostability as compared to its liquid counterpart. The ion conductivity was measured to reach 5.6 × 10^?5 S/cm at room temperature and 6.3 × 10^?4 S/cm at 80 °C after doped with LiTFSI at a ratio of Li:O = 0.05, presenting the promise to meet the practical requirement of lithium ion batteries for polymer electrolytes. © 2006 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 44: 3650–3665, 2006     

Growth of oxide thin films for optical gas sensor applications

Tungsten trioxide and titanium dioxide thin films were synthesised by pulsed laser deposition. We used for irradiations of oxide targets an UV KrF* (λ = 248 nm, τ_FWHM ≅ 20 ns, ν = 2 Hz) excimer laser source, at 2 J/cm² incident fluence value. The experiments were performed in low oxygen pressure. The (0 0 1) SiO₂ substrates were heated during the thin film deposition process at temperature values within the 300-500 °C range. The structure and crystalline status of the obtained oxide thin films were investigated by high resolution transmission electron microscopy. Our analyses show that the films are composed by nanoparticles with average diameters from a few to a few tens of nm. Moreover, the films deposited at substrate temperatures higher than 300 °C are crystalline. The tungsten trioxide films consist of a mixture of triclinic and monoclinic phases, while the titanium dioxide films structure corresponds to the tetragonal anatase phase. The oxide films average transmittance in the visible-infrared spectral range is higher than 80%, which makes them suitable for sensor applications.     

Optical properties of In2O3 oxidized from InN deposited by reactive magnetron sputtering

Unintentionally doped and zinc-doped indium nitride (U-InN and InN:Zn) films were deposited on (0 0 0 1) sapphire substrates by radio-frequency reactive magnetron sputtering, and all samples were then treated by annealing to form In₂O₃ films. U-InN and InN:Zn films have similar photon absorption characteristics. The as-deposited U-InN and InN:Zn film show the absorption edge, ∼1.8-1.9 eV. After the annealing process at 500 °C for 20 min, the absorption coefficient at the visible range apparently decreases, and the absorption edge is about 3.5 eV. Two emission peaks at 3.342 eV (371 nm) and 3.238 eV (383 nm) in the 20 K photoluminescence (PL) spectrum of In₂O₃:Zn films were identified as the free-exciton (FE) or the near band-to-band (B-B) and conduction-band-to-acceptor (C-A) recombination, respectively.     

Energy levels in doped SiGe quantum well studied by admittance spectroscopy

SiGe/Si quantum wells (QWs) with different Boron doping concentrations were grown by molecular beam epitaxy (MBE) on p-type Si(1 0 0) substrate. The activation energies of the heavily holes in ground states of QWs, which correspond to the energy differences between the heavy hole ground states and Si valence band, were measured by admittance spectroscopy. It is found that the activation energy in a heavily doped QW increases with doping concentration, which can be understood by the band alignment changes due to the doping in the QWs. Also, it is found that the activation energy in a QW with a doping concentration of 2 × 10²⁰ cm⁻³ becomes larger after annealing at a temperature of 685 °C, which is attributed to more Boron atoms activation in the QW by annealing.     

ELECTRON GUN FOR LARGE ORBIT GYROTRON (LOG) WITH DECREASED INFLUENCE OF CATHODE PLASMA ON ELECTRON BEAM PROPERTIES

High power Large Orbit Gyrotron (LOG) [1] is now under development at FIR FU. First version of this device was recently manufactured and then assembled with power supply ETIGO-IV [2]. Results of preliminary tests of electron-optic system are presented. The conditions when stableflat form of current pulse realized are discussed. Analytical estimations of cathode-anode distance to achieve small influence of cathode plasma during high voltage (HV) pulse are performed. Two new electron gun versions with decreased influence of the cathode plasma on its impedance and pulse form are suggested and optimized. New optimal magnetic field distributions are found. First gun has quiasi-flat cathode configuration near the anode diaphragm and provides operating current about 60 A. Second one uses blade cathode with operating current about 30 A. Beam quality for both guns is suitable for LOG operation.