集中荷载下叠合梁抗剪强度

本文对低叠合面钢筋破简支在合梁二阶段受力的斜截面抗剪性能进行了试验研究，并运用非线性有限元分析和试验实测数据，得出了一个适合于集中荷载下高低叠合面叠合梁的抗剪强度计算公式．     

Towards the synthesis of MAX-phase functional coatings by pulsed laser deposition

Pulsed laser deposition with a Nd:YAG laser was used to grow thin films from a pre-synthesized Ti₃SiC₂ MAX-phase formulated ablation target on oxidized Si(1 0 0) and MgO(1 0 0) substrates. The depositions were carried out in a substrate temperature range from 300 to 900 K, and the pressure in the deposition chamber ranged from vacuum (10⁻⁵ Pa) to 0.05 Pa Argon background pressure. The properties of the films have been investigated by Rutherford backscattering spectrometry for film thickness and stoichiometric composition and X-ray diffraction for the crystallinity of the films. The silicon content of the films varied with the energy density of the laser beam. To suppress especially the silicon re-sputtering from the substrate, the energy of the incoming particles must be below a threshold of 20 eV. Therefore, the energy density of the laser beam must not be too high. At constant deposition energy density the film thickness depends strongly on the background pressure. The X-ray diffraction measurements show patterns that are typical of amorphous films, i.e. no Ti₃SiC₂ related reflections were found. Only a very weak TiC(2 0 0) reflection was seen, indicating the presence of a small amount of crystalline TiC.     

基片温度对坡莫合金薄膜结构和磁电阻的影响

用磁控溅射方法制备了系列坡莫合金Ni80Fe20薄膜。利用X射线衍射、扫描电子显微镜和原子力显徽镜分析了薄膜的结构、晶粒取向、薄膜厚度、截面结构和表面形态。用4点探测技术测量了薄膜的电阻和磁电阻。结果表明：随衬底温度的升高，晶粒明显长大。膜内的缺陷和应力显著减小，而且增强了薄膜晶粒的[111]择优取向。结果表明，薄膜电阻率显著减小，而磁电阻显著增大。     

Wavelength dependence in photochemical vapor deposition of aluminum film using dimethylaluminum hydride

In photochemical vapor deposition of aluminum film on silicon using dimethylaluminum hydride, (CH₃)₂AlH, a surface reaction dominated below a (CH₃)₂AlH pressure of 0.3 m Torr at 200°C, which was induced only with the 160 nm band emitted from a deuterium lamp. A gas-phase reaction occurred above 0.3 mTorr at 200°C, which could be induced by both 160 nm and 240 nm emission bands from the lamp. To distinguish between surface ad gas-phase reactions, a thickness profile was used. At 240°C the surface reaction could be induced even by the 240 nm band, while the deposits formed under illumination of the two bands were thinner than those obtained with only the 240 nm band, indicating occurrence of vacuum ultraviolet (VUV)-enhanced desorption. The mechanism responsible for the observed wavelength dependence in unclear. The electrical resistivity of the films deposited at 200°C was 4.5 μΩ cm, which did not change with wavelength.     

光学薄膜在现代汽车工业中的应用

本文论述应用光学薄膜技术对汽车窗口玻璃和塑料的若干性能进行改进的技术发展水平，这些性能包括塑料表面的硬化，红外区的反射，紫外区的吸收，偏振化作用，双折射，憎水性以及光学角度选择性等，评论等离子体处理和物理蒸汽淀积薄膜工艺近来应用的一些例子。对于物理蒸汽淀积薄膜所提供的异常功能连同实际使用中它们的耐久性作了特殊的强调。     

Current R & D activities at TRCRE in polymer processing by EB

The current status of the R & D activities is presented on electron beam processing of polymers being carried out at TRCRE. Topics included are sterilization of medical products, graft polymers for selective separation or absorbents and curing of liquid prepolymer-monomer systems.     

Zeeman transitions in deuterium atoms induced by ultra-relativistic electrons

We present data showing hyperfine transitions in an atomic deuterium beam induced by the (476 MHz) radio-frequency field of a 704 MeV electron beam in a storage ring. A polarized deuterium beam, produced in an atomic beam source, was crossed with a stored electron beam and analyzed with a Breit--Rabi polarimeter. Electron-beam induced transitions were singled out by injecting different combinations of hyperfine states. Transition probabilities as high as 70% were measured at large currents (~ 100 mA). All possible deuterium transitions for a radio-frequency of 476 MHz were observed. In addition, a 1--6 transition resulting from the first harmonic (952 MHz) was observed. The effects of these transitions are of general importance for the polarized internal target technique applied in nuclear and particle physics experiments. The data are reasonably described by numerical estimates. The observed mechanism can be exploited to create nuclear polarized atoms when injecting electron polarized atoms with no net nuclear polarization into a storage cell. However, when nuclear polarized atoms are injected, care should be taken to avoid this mechanism, since it would result in depolarization of the atoms. The studies enabled us to choose the magnetic guide field during our spin-dependent electron--deuteron scattering experiments, such that electron-beam induced depolarizing effects were avoided. This revised version was published online in July 2006 with corrections to the Cover Date.     

Deposition of boron nitride on graphite at 1300 K

A method for the deposition of BN onto graphite and other substrates is described. Boron trichloride (BCl₃) and ammonia (NH₃) diluted with Ar were used as reacting gases. The deposition process was carried out at 1300 K as well as lower temperatures in an open system at pressures of 1 atm. The consequences of the introduction of hydrogen to the system were considered. It was demonstrated that the replacement of argon with hydrogen increases the efficiency of the process as well as the theoretical rate of BN deposition. However, the acceleration of the deposition seems to be unprofitable, because the resulting supersaturation leads to the formation of an amorphous phase. The modification of the experimental conditions were proposed.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

准直孔法改善束流品质初探

本文提出了用准直孔结合调节束流导引磁场获得较好品质强流电子束的方法,运用该方法在1.5MeV直线感应加速器(LIA)进行了试验,结果准直束流前后沿明显减小,束亮度提高几倍;同时,用此方法测出了束密度及束亮度的径向分布.