Ionenstrahlätzen – Verfahren und Ausrüstungen für die Mikrostrukturierung

Ion beam techniques are widely used jur modification as well us analysis of materials in development and production of VLSI circuits and their importance is continuously increased in course of the reduction of structure dimensions. Some possibilities and problems connected with the application of ion beams of low energy in the pattern transfer are- described and the stage of development achieved in the Central Institute of Isotope and Radiation Research is outlined.     

Conversion Electron Moessbauer Spectroscopie Studies on Ion Implanted Iron Layers

Conversion electron Moessbauer spectroscopy (CEMS) is a method very suitable for the study of ion implanted iron. It is demonstrated on nitrogen and phosphorus implanted iron layers. Using this technique not the 14.4-keV-gamma-rays as in the case of the conventional Moessbauer transmission experiments but the conversion and Auger electrons are detected. These electrons have a maximum energy of 7.3 keV. The Moessbauer signal can be obtained from a surface layer of about 300 nm. But the main fraction of the signal, namely 65%, comes from the first 50 nm. This range is just interesting for ion implantation. Depending on the test conditions different iron nitrides are formed by the nitrogen implantation and the phosphorus implantation can result in both amorphization and compound formation in the implanted layer.     

Ion Exchange Separation of Eu3+ from Different Salt Solutions

Two samples of potassium zinc hexacyanoferrate were prepared using two different ratios of the initial materials. The distribution coefficient of Eu³⁺ on the two samples was determined. The effect of the cation concentration in the aqueous phase on the adsorption of Eu³⁺ was also studied. The mechanism of the exchange process was described on the light of the data obtained, and the equilibrium constant of the exchange reaction was also calculated.     

Nano hillock and complex crater formation by low-energy proton implantation with incident angle into lithium niobate single crystal

The formation of nano-size hillocks and simple and complex craters was observed as a result of ion–surface collisions with a lithium niobate single crystal on proton implantation. The low-energy ion implantation process is considered as a controllable and versatile tool for surface and near-surface modifications down to an atomic scale as an alternative to the swift heavy ion irradiation effect. Lithium niobate samples implanted by proton ions with a low energy of 120 keV at various fluences (10¹⁵ and 10¹⁶ protons/cm²) were studied using atomic force microscopy (AFM). The images of surface modification appear as simple and complex crater formation in the case of incident ions at normal to the surface. Varying the angle of incidence to θ=30° with respect to the normal to the surface, hillocks and multi-hillocks were observed. The complex craters with central uplifted, cone-shaped hillocks with a height of up to 4.3 nm are surrounded by low-height (1 nm) rims. The hillock height varies from a few nanometers to 16 nm with the basal diameter from 200 to 340 nm depending on the ion implantation conditions. The complex crater and hillock formation on the lithium niobate sample surface at the collision spot with the impact of incident angle is discussed.     

Electron temperature and ion density measurements in a glow discharge of an Ar–N2 mixture

A DC glow discharge produced in N₂ gas can generate several species that are important in different applications, such as the modification of surface properties of materials. A low-pressure glow discharge apparatus was used for the the analysis of the Ar–N₂ mixture at a total pressure of 2.0 Torr, a power of 20 W and 40 l/min flow rate of gases. The emission bands were measured in the wavelength range of 200–1100 nm. The principal elements are N₂, N ₂⁺ and Ar I. The electron temperature was found in the range of 1.72–2.08 eV, and the ion density was in the order of 10¹⁰ cm^?3.     

Electron-spin-dependent 4He+ ion scattering on Bi surfaces

We studied low-energy (～ 1.55 keV) electron-spin-polarized ⁴He⁺ ion scattering on a Bi(111) ultrathin film epitaxially grown on a Si(111) substrate. We observed that the scattered ion intensity differed between the incident He⁺ ions with up and down spins even though Bi is a non-magnetic element. To analyze the origin of this spin-dependent ion scattering (the spin asymmetry), we investigated the detailed relationship between the spin asymmetry and the incident angle, the azimuthal angle, the scattering angle, and the incident energy. All the data indicate that the spin asymmetry originates from the scattering cross section owing to the non-central force in the He⁺–Bi atom binary collision. The non-central force is most likely attributed to the spin–orbit coupling that acts transiently on the He⁺ 1s electron spin in the binary collision.     

A comparative study of ion-induced damages in C60 and C70 fullerenes

The stability of fullerenes (C₆₀ and C₇₀) under swift heavy ion irradiation is investigated. C₆₀ and C₇₀ thin films were irradiated with 120 MeV Ag ions at fluences from 1×10¹² to 3×10¹³ ions/cm². The damage cross-section and radius of damaged cylindrical zone were found to be higher for C₆₀ than C₇₀ as evaluated by Raman spectroscopy, which shows that the C₇₀ molecule is more stable under energetic ion impact. The higher damage cross-section of the C₆₀ molecule compared with that of the C₇₀ molecule is explained on the basis of thermal conductivity in the framework of the thermal spike model. The surface morphology of pristine C₆₀ and C₇₀ films is studied by atomic force microscopy. UV-visible absorption studies revealed that band gap for C₆₀ and C₇₀ fullerenes thin films decreases with increasing ion fluence. Resistivity of C₆₀ and C₇₀ thin films decreases with increasing ion fluence but the decrease is faster for C₆₀ than C₇₀, indicating higher damage in C₆₀. Irradiation at a fluence of 3×10¹³ ions/cm² results in complete damage of fullerenes (C₆₀ and C₇₀) into amorphous carbon.     

Funnel-type etched ion tracks in polymers

It is shown that conical track etching is a much more complicated process than generally assumed. The choice of the corresponding parameters (i.e. the ratios of concentrations and diffusion coefficients of both etchant (e.g. NaOH) and stopping solutions (e.g. HCl) and the etching temperature) determines the ratio of polymer dissolution to etchant penetration. The latter value controls the counterplay of diffusion, etching, ionic conductivity, field emission and capacitive effects, which is decisive for both the final track shapes and their electronic properties. The stages of track evolution during etching under different conditions are outlined in detail. Both transparent conical nanopores and “funnel-type” tracks can be obtained, the latter consisting of a shorter cone and a residual latent track. Depending on the internal structure of that latent track segment, such funnel-type tracks either allow smooth transmission of the rectified currents or they emit unipolar current spikes. Not only the study of electronic properties of single ion tracks, but also of a multitude of tracks makes sense. Depending on the applied parameters, the individual track properties may either just add up, or new effects may be found that emerge from the interaction of the tracks among each other. This is preferentially the case for spike-emitting tracks, where effects such as phase-locked spike synchronization can be found as described by neural network theory.     

Defect clustering in double doped fluorite crystals with Lu and Gd

Abstract

Solid solutions Ca¹ x-^yLu^xGd^y F_2+x+y for 10^?4 ≤ x ≤ 2 × 10^?2 and y=0.0001 have been studied by electron paramagnetic resonance (EPR) and ionic thermal currents (ITC). It has been found that the ITC spectrum from 77 to 420 K is very weak and the main peak is attributed to the relaxation of both Lu³⁺-F^? _x and Gd³⁺F^? _i nn dipoles. No polarizable clusters are present in the temperature range explored here. The EPR spectra show the presence of Gd³⁺ tetragonal and cubic centers due to the local and non local compensation, respectively. The continuous decrease in the molar fraction of Gd³⁺ tetragonal centers together with the low concentration of Lu nn dipoles is an evidence of the existence at these low and intermediate concentrations of large clusters such as the cubo-octahedral hexamer which has been proposed for CaF₂ crystals very highly doped with small trivalent cations.     

TEM study of ion implanted GaAs after pulsed electron beam annealing

Abstract

(001) GaAs single crystals were implanted with 150 keV Cr⁺ ions using a dose of 5 × 10¹⁵ ions cm^?2. The amorphized surface layers were subjected to pulsed electron beam annealing at energy densities in the range 0–1.3 J cm^?2. A detailed TEM investigation of the damaged and annealed surface layer was conducted. These observations were correlated with backscattering results.