CMOS反相器的电磁干扰频率效应

利用自主开发的2维半导体器件-电路联合仿真器,研究了CMOS反相器在1 MHz～20 GHz电磁干扰作用下的响应。仿真结果表明:低频电磁干扰通过控制CMOS反相器中MOS管的导通、截止影响CMOS反相器的正常工作;高频电磁干扰通过MOS管中的本征电容耦合到输出端,干扰CMOS反相器的工作状态;CMOS反相器对于电磁干扰的敏感度随着干扰频率上升而不断降低。     

单相SPWM逆变器快标分叉控制及其稳定性分析

在电力电子电路中, H桥逆变器是一类基本的非线性电路拓扑, 在工作过程中, 由于电路属于时变参数系统, 使得其中很容易产生时间域上的快标不稳定现象, 斜坡补偿是一种简单而有效的方法, 可以很好地削弱这种不稳定现象.在一般电路应用中, 斜坡补偿主要依赖于经验设计, 缺乏必要的设计准则.本文将从非线性系统的分叉控制理论出发, 对峰值电流模式控制H桥逆变器中的斜坡补偿进行详细地分析和研究, 给出了斜坡信号补偿幅度的理论要求.分析计算结果和大量的精确仿真结果是一致的, 电路在稳定工作的同时, 各项性能指标也获得了极大的改善.该分析方法同样适用于其他电力电子电路的稳定性分析.     

双降压式全桥逆变器非线性现象的研究

双降压式全桥逆变器具有无桥臂直通、输入直流电压利用率高、效率高、续流二极管可优化选取等优点,因而在高压输出场合得到广泛的应用.本文研究了双降压式全桥逆变器的分岔和混沌现象,建立了电流闭环比例控制下的二阶离散模型,得到了不同时间段内的频闪映射模型;通过折叠图和分岔图分析了不同比例系数k对于系统稳定性的影响,并搭建了Matlab/Simulink仿真模型,得到了电流闭环比例控制时电流iL的时域波形和相图轨迹,并在频域下分析了分岔和混沌对系统频谱的影响.同时,利用分岔图的方法分析了输入电压E、滤波电感L和开关周期T等外部参数变化时系统的非线性行为.研究结果表明,正确选择双降压式全桥逆变器的电路参数对于其稳定运行具有重要意义.     

Static and dynamic analysis of an all-optical inverter based on a Vertical Cavity Semiconductor Optical Amplifier (VCSOA)

We report the static and dynamic properties of an all-optical inverter based on an 850 nm Vertical Cavity Semiconductor Optical Amplifier (VCSOA). The inverter exhibits low switching power requirements (~ 15 μW), large on/off contrast ratio (> 11 dB), and high speed operation (~ 1.4 GHz). Large and small signal measurements show that the speed of operation and the on/off contrast ratio improve with increased bias current. This holds important prospects for the development of VCSOA-inverters for high-speed, low-power optical logic applications. Finally, a theoretical model of the VCSOA-inverter has been employed giving good agreement with experiments.     

Simulation of CMOS logic inverter based on vertically stacked polycrystalline silicon nanosheet gate-all-around MOSFET and its electrical characteristics

The DC and inverter characteristics for the position of a single grain boundary (GB) in a nanosheet gate-all-around (GAA) MOSFET based on poly-crystalline silicon with three channels were analyzed. For the same channel layer, owing to the band banding by the drain voltage, the GB displays decreasing influence on the current as it moves towards the drain. The GB exhibits the highest on-state current of 6.89 × 10⁻⁴ A/μm when it is located at the drain. The DC characteristics determine the noise margin and delay time of the inverter. The higher the induced current, the lower the noise margin and delay time of the NMOS leading to improved characteristics of the inverter. The delay time when the GB existed in the drain, was considered to be the best in terms of DC performance as it was the lowest at 6.47 ps and showed 8.3% improvement in the switching characteristics.     

基于特定消谐技术产生任意波形的研究

从特定消谐的原理出发,建立了产生谐波的数学模型,分析了开关角与各次谐波之间的关系,得到产生谐波不宜采用查表法而应实时计算的结论.对于特定消谐式逆变器的实时控制,进行了硬件和软件方面的设计,并举例分析了实验结果.     

Multirate Partitioned Runge-Kutta Methods

The coupling of subsystems in a hierarchical modelling approach leads to different time constants in the dynamical simulation of technical systems. Multirate schemes exploit the different time scales by using different time steps for the subsystems. The stiffness of the system or at least of some subsystems in chemical reaction kinetics or network analysis, for example, forbids the use of explicit integration schemes. To cope with stiff problems, we introduce multirate schemes based on partitioned Runge—Kutta methods which avoid the coupling between active and latent components based on interpolating and extrapolating state variables. Order conditions and test results for such a lower order MPRK method are presented.This revised version was published online in October 2005 with corrections to the Cover Date.     

Synthesis and characterization of a novel ambipolar polymer semiconductor based on a fumaronitrile core as an electron‐withdrawing group

Two conjugated polymers containing stilbene and fumaronitrile moieties were synthesized to investigate their electronic properties by the existence of electron‐withdrawing cyano groups on a vinylene backbone. The cyclic voltammetry investigation and time‐dependent density functional theory calculations indicated that the cyano substituents lowered the lowest unoccupied molecular orbital (LUMO) energy level by about 0.65 and 0.63 eV, respectively. The lowering of the LUMO energy levels due to the electron‐withdrawing properties of the cyano substituents could enhance electron injection capability. Furthermore, bithiophene‐fumaronitrile (donor‐acceptor) intermolecular interaction facilitates the self‐assembly of the polymer chains. Organic field‐effect transistors (OFETs) based on PBTSB without the electron‐withdrawing group only exhibit hole transport, while OFETs based on PBTFN with cyano substituents exhibit ambipolar characteristics. The growth of PBTFN crystalline fibrils was observed with increasing annealing temperature, which enhanced hole and electron mobility. A complementary‐like inverter using PBTFN with ambipolar properties exhibited good symmetry with an inverting voltage nearly half that of the power supply with a gain of 9 at V_DD = 100 V. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013     

All-Fiber Optical Signal Inversion Using Stimulated Raman Scattering

We propose a method for all-optical signal inversion by means of stimulated Raman scattering (SRS). The idea is based on the transference of energy from the logic state #x201C;1#x201D; to the second stokes and making the logic state #x201C;0#x201D; into logic state #x201C;1#x201D; by receiving energy from the pump through SRS. According to the numerical simulation, a continuous wave pump source of LOW at 1453 nm and a few hundred meters of highly nonlinear fiber are required to invert an input signal at 1555 nm. The optical signal is inverted with high on-off contrast ratio.     

40 kW高功率密度数字化控制充电电源

 研制了基于串联谐振和高频逆变技术的40 kW/10 kV数字化控制高频高压脉冲电容器恒流充电电源;采用合理谐振参数设计和高频高压变压器优化设计,使得40 kW充电电源功率密度达到0.5 MW/m3;研究了高压充电电源的保护技术,通过采取多种保护方法及安全措施,提高了充电电源的安全性能;在40 kW数字化控制充电电源基础上,介绍了实现充电电源远端控制和并联运行的方案;给出了1 MJ/10 kV脉冲电容器负载上的单台充电电源的实验结果。