基于洛伦兹线型极光的上层大气风场探测模式研究

从洛伦兹线型极光的干涉强度、调制度与光程差的理论公式出发,用λ/4的步进光程差即“四强度法”获得一个波长范围内的4个干涉强度值,以实现基于洛伦兹线型极光的上层大气的风速、温度、压强等物理量的探测。提出用改形萨尼亚克成像干涉仪替代迈克耳孙干涉仪实现上层大气风场,给出了基准光程差的公式,并用四面角锥棱镜镀膜技术获得4个干涉强度值来同时探测上层大气风场的模式。最后在实验室将Kr灯557.0nm调整光束到一定宽度,对称地从顶角为60°的两面镀膜角锥棱镜的顶点入射,用768pixel×576pixel的CCD照相机接收到两个光斑的成像,这两个光斑的再复制就得到镀膜四面角锥棱镜在一个周期内的4个干涉强度光斑,从而获得上层大气风场。     

Surface treatment on polyethylenimine interlayer to improve inverted OLED performance

Polyethylenimine(PEI) interlayer rinsing with different solvents for inverted organic light emitting diodes(OLEDs)is systematically studied in this paper. In comparison with the pristine one, the maximum current efficiency(CE_(max)) and power efficiency(PE_(max)) are enhanced by 21% and 22% for the device rinsing by ethylene glycol monomethyl ether(EEA).Little effect is found on the work function of the PEI interlayer rinsed by deionized water(DI), ethanol(EtOH), and EEA.On the other hand, the surface morphologies of PEI through different solvent treatments are quite different. Our results indicates that the surface morphology is the key to improving the device performance for IOLED as the work function of PEI keeps stable.     

A G-band terahertz monolithic integrated amplifier in 0.5-μm InP double heterojunction bipolar transistor technology

Design and characterization of a G-band(140–220 GHz) terahertz monolithic integrated circuit(TMIC) amplifier in eight-stage common-emitter topology are performed based on the 0.5-μm In Ga As/In P double heterojunction bipolar transistor(DHBT). An inverted microstrip line is implemented to avoid a parasitic mode between the ground plane and the In P substrate. The on-wafer measurement results show that peak gains are 20 dB at 140 GHz and more than 15-dB gain at 140–190 GHz respectively. The saturation output powers are-2.688 dBm at 210 GHz and-2.88 dBm at 220 GHz,respectively. It is the first report on an amplifier operating at the G-band based on 0.5-μm InP DHBT technology. Compared with the hybrid integrated circuit of vacuum electronic devices, the monolithic integrated circuit has the advantage of reliability and consistency. This TMIC demonstrates the feasibility of the 0.5-μm InGaAs/InP DHBT amplifier in G-band frequencies applications.     

钙钛矿太阳能电池:器件设计和I-V滞回现象

基于染料敏化太阳能电池发展起来的有机-无机杂化钙钛矿太阳能电池经过不到5年的快速发展, 光电转换效率从最初的3.8%提高到了经过认证的17.9%. 但是常用结构的钙钛矿太阳能电池在性能测试过程中的电流-电压(I-V)曲线会随着测试器件扫描方向的不同而明显不同. 该现象被称为I-V滞回现象. 进一步研究发现I-V曲线还与扫描速度、起始测试的偏压值和光照历史明显相关. 本工作结合不同的器件构造, 就可能造成这种I-V滞回现象的不同原因进行了总结和分析, 并对如何获得可靠的光电转换效率的测试方法进行了评述.     

多种形式的加权广义Farey组织网络金字塔的复杂性

构建了三类确定性加权广义Farey组织的网络金字塔.理论推导并数值计算了网络金字塔的拓扑性质(度分布、平均最短路径、平均聚类系数和相称性系数等),进而将Farey序列作为网络节点的确定、随机和混合的三种权重值,以此为基础计算并拟合了三类网络金字塔的点的强度分布和边的权重分布.计算结果初步揭示了加权广义Farey组织的网络金字塔的复杂性特征,有助于了解一些实际网络的复杂性和多样性.     

Towards a unified view of the solvatochromism of phenolate betaine dyes

An attempt has been made in order to unify the three types of solvatochromisms (negative, positive and inverted) of phenolate betaine dyes by a working model which describes them as particular cases of a general behavior. The model, based on the calculation (gas phase) of the chemical hardness of donor and acceptor fragments, was applied to 56 examples from the literature. As a result, the investigated compounds were grouped according to the sum of the hardnesses of their (non‐interacting) fragments, this sum being larger for a negative, intermediate for an inverted, and smaller for a positive solvatochromic behavior. Copyright © 2009 John Wiley & Sons, Ltd.     

A general design method for tunable microstrip devices at microwave frequency based on liquid crystal technology

This paper proposes a general design method for microstrip devices using liquid crystal (LC) at microwave frequencies. The method employs lumped element modelling to first optimise the filter at the working frequency. Then EM simulation is used for the second optimisation and the full-wave simulation. LC is used as the tunable material since the anisotropy can be changed with low voltages. The approach of modelling LC as a homogeneous anisotropy demonstrated with Computer Simulation Technology (CST) Microwave Studio is an acceptable approximation, which accurately predicts the tuning range. A new tunable inverted microstrip filter using nematic LCs at millimetre-wave frequencies is designed to verify the method. The proposed design utilises interdigital capacitors in parallel with two inductive loops to form a bandpass filter. It is fabricated and measured, and shows that the centre frequency varies from 5.01 to 5.51 GHz (10% tunability) and achieves a 3-dB bandwidth of 450 MHz, which is in good agreement with simulation results. A finite element simulation is used to investigate the behaviour of LC directors in the fully switched state; the effective permittivity is extracted from finite-element simulation and used in CST to achieve an even more accurate agreement with experimental results.     

不同硅晶面指数上的类倒金字塔结构研究与分析

晶体硅作为一种重要的半导体材料,在集成电路、太阳能电池等方面具有广泛的应用.基于各向异性的刻蚀方法,不同晶面指数的硅都可以在表面形成由{111}晶面族组成的正/倒金字塔.本文基于{111}晶面族与（abc）晶面相交构成类倒金字塔结构的特性,建立了硅的晶面指数（abc）与所形成的类倒金字塔结构的数学模型.将硅的晶面指数（abc）分成0≤a≤b<c,0≤a<b=c,a=b=c三种情况进行讨论,分别得到不同晶面指数的类倒金字塔结构.实验结果的扫描电子显微镜图证实了理论计算的准确性.晶面指数与类倒金字塔结构具有一一对应的关系,因此可以根据各向异性刻蚀后的类倒金字塔结构,进行硅的晶面指数进行检测.     

微纳混合结构黑硅的制备及其关键工艺技术讨论

黑硅是一种能大幅提高器件光电转换效率的新型电子材料,微纳混合结构黑硅是一种比普通黑硅材料更高效的新型黑硅材料,如何制备出大面积、形貌特征好、表面洁净度高的黑硅材料是制备高效的黑硅太阳能电池的前提。首先,利用湿法腐蚀方法,通过设计合适的反应固体装置和良好的工艺控制手段,在金字塔硅表面制备了大面积的微纳混合结构黑硅;然后,对其制备的关键工艺技术进行了研究讨论。实验结果表明,该方法制备的微纳混合结构黑硅具有形貌特征好、表面洁净度高和低表面反射率等特征。有效去除表面银沉积物后,该黑硅在300~1 100 nm范围内的加权平均反射率低至4.06%。该制备工艺方法适用于大面积高效微纳混合结构黑硅的规模制备,在高效黑硅太阳能电池领域具有重要的应用价值。     

无调制两面锥波前传感器的衍射理论分析和数值仿真

两面锥波前传感器(two-sided pyramid wavefront Sensor,TSPWFS)是一种高空间采样率和高光能利用率的波前传感器.为了深入研究它的波前复原原理,采用波动光学理论详细推导了无调制TSPWFS的衍射理论,给出了无调制TSPWFS波前复原时线性重构矩阵的解析解,并且通过数值仿真确定出最佳的光瞳像中心间距,并对静态像差的波前复原及闭环校正进行数值仿真.分析结果表明,无调制TSPWFS具有波前复原时不需要现场测量响应矩阵,可以校正系统像差,闭环校正结果稳定等优点,可以在实际自适应光学系统中进行波前探测. 关键词： 自适应光学 两面锥波前传感器 波前复原