三维回旋自共振微波放大器的理论计算

给出了三维回旋自共振微波放大器（ＣＡＲＭ）的电于运动方程和光场演化方程，并在忽略束流空间电荷效应的前提下，编制了单模放大器程序。利用数值模拟详细考察了电子束束流质量对微波输出功率的影响，模拟结果与实验值符合得很好。     

动力飞行体电磁脉冲效应数值分析

 利用时域有限差分方法模拟了在不考虑等离子体高温尾焰情况下,电磁脉冲与动力飞行体的相互作用。计算结果表明：在入射电磁脉冲的作用下, 飞行体蒙皮上将感应很大的皮电流; 感应电流密度的波形为衰减振铃信号波形,振铃周期等于电流波在整个飞行体长度上流动两次的时间;感应皮电流密度分布的特点是飞行体两端电流密度小,中部大。     

Influence of the Tl- and Hg-content on magnetic and transport properties of the Pb, Sr-doped Tl-1223 and Hg-1223 superconductors

The effects of the thallium and mercury content x on the as-sintered and post annealed samples of M_xPb_0.4Sr_1.6Ba_0.4Ca₂Cu₃O_8+δ {M: Tl (0.32≤x≤0.74) or Hg (0.18≤x≤0.68)} have been studied by magnetization and transport measurements. For Tl-1223 we have found the optimum Tl doping level to be x=0.53 regarding the grain properties, the content of superconducting phase, the first penetration field H_pl^wl, the transport (J_c^tr), magnetic intergrain (J_c^M) and intragrain (J_c^g) critical current densities. The critical temperature T_c of the as-sintered Tl-1223 sample decreased with increasing Tl content. Post-annealing in oxygen improved the T_c for Tl contents of x≥0.53 and had generally positive effects on the critical current densities. The intergrain properties of the Hg-1223 samples were much worse than those of the Tl-based superconductors.     

Confined electron and shallow donor states in graded GaAs/Al Ga As spherical quantum dots

A theoretical study is performed on the confined electron and shallow donor states properties in graded GaAs/Al_xGa_1-xAs spherical quantum dots. The two lowest energy levels of a confined electron are obtained taking into account the dependence of the electron effective mass on the spatial profile of the Al molar fraction. The ground state of a single Si shallow donor, which may be located at an arbitrary position in the structure, is calculated through a variational approach. Depending on the dot interface width and localization, we find that the energy levels of the electron and donor states for the system under study can be blue or red shifted appreciably in comparison to those calculated within the sharp interface picture. We show that it is necessary to have accurate information concerning the interface of semiconductor dots whose samples are used in the experiments, in order to achieve a better understanding of their optical properties. Received 31 May 1999     

位移测量中真空室偶极涡流的影响及其扣除

一、真空室上偶极涡流对测量的影响 在托卡马克放电中,出现宏观不稳定性时,等离子体电流会出现小的正尖峰,并在整个大环上沿水平方向向内快速收缩。这时真空室(薄不锈钢壳)上会感应出很大偶极涡流,如图1所示,真空室上偶极电流分布为     

The Quantum-Classical Comparison of the Arrival-Time Distribution Through the Probability Current

We consider the arrival time distribution defined through the quantum probability current for a Gaussian wave packet representing free particles in quantum mechanics in order to explore the issue of the classical limit of arrival time. We formulate the classical analogue of the arrival time distribution for an ensemble of free particles represented by a phase space distribution function evolving under the classical Liouville's equation. The classical probability current so constructed matches with the quantum probability current in the limit of minimum uncertainty. Further, it is possible to show in general that smooth transitions from the quantum mechanical probability current and the mean arrival time to their respective classical values are obtained in the limit of large mass of the particles.     

Effects of linear birefringence inside sensing head upon bulk glass current sensors’ sensitivity

The effects of the linear birefringence inside a bulk glass current sensing element and the incident polarizing angle upon the performance of a bulk glass optical current sensor are derived and analyzed theoretically. The investigation results show that the linear birefringence will modify the scale factor of the system with a sample function; it can also affect the extent of the influence of the incident polarizing angle, at the same time. When the incident polarizing angle has some special values such as 0, 45, or 90, its effect on the system will be zero. These results might provide some useful reference to the researchers and designers of bulk glass optical current sensors.     

温度和电流对白光LED发光效率的影响

对大功率白光LED发光效率进行了研究,得出温度和电流对LED发光效率的影响:随着温度的升高,势阱中辐射复合几率降低,从而降低了发光效率;电流的升高,使更多的非平衡载流子穿过势垒,降低了发光效率。LED工作时,过高的工作温度或者过大的工作电流都会产生明显的光衰:如果LED工作温度超过芯片的承载温度,这将会使LED的发光效率快速降低,产生明显的光衰,并且对LED造成永久性破坏;如果LED的工作电流超过芯片的饱和电流,也会使LED发光效率快速降低,产生明显的光衰。并且LED所能承载的温度与饱和电流有一定关系,散热良好的装置可以使LED工作温度相对降低些,饱和电流也可以更大,LED也就可以在相对较大的电流下工作。     

p-GaN层厚度对GaN基p-i-n结构紫外探测器性能的影响

研究了p-GaN层厚度对GaN基pin结构紫外探测器性能的影响.模拟计算表明：较厚的p-GaN层会减小器件的量子效率,然而同时也会减小器件的暗电流,较薄的p-GaN层会增加器件的量子效率,但是同时也增加了器件的暗电流.进一步的分析表明,金属和p-GaN之间的结电场是出现这种现象的根本原因.在实际的器件设计中,应该根据实际需要选择p型层的厚度. 关键词： GaN 紫外探测器 量子效率 暗电流     

Bi-2223/Ag高温超导带临界电流各向异性的实验测量及分析

本文介绍了Bi-2223/Ag高温超导带临界电流各向异性的实验测量方法及原理,指出了在不同磁场方向(与超导带面夹角)下,Bi-2223/Ag带临界电流随直流背景磁场的变化规律以及实验应注意的问题.Bi-2223/Ag带材的各向异性决定了其临界电流对垂直于带材表面的磁场非常敏感,这是该带材在高温超导磁体等强电应用方面的不利因素.