一种简单的光纤光栅电调谐方法

采用较简单的双点源真空蒸发法在光栅外表面上蒸镀一层均匀铝膜,利用电流流过铝膜时产生的电阻热改变光栅的温度而使光栅的中心波长向长波方向发生改变.光栅中心波长的变化与所加电流的平方成正比.实验中用较小的电流(约43mA)获得了较大的波长调谐范围(约4nm),其调谐精度达到2.15×10^-3nm/(mA)².     

任意形状的载流线圈在远处磁场分布的简单计算

文章根据毕－沙定律、电流回路元和载流线圈的费曼模型，用普通物理的方法计算出载流线圈在远处一点的磁场分布。     

Topological Aspects of Liquid Crystals

Using -mapping method and topological current theory, the properties and behaviors of disclination points in three-dimensional liquid crystals are studied. By introducing the strength density and the topological current of many disclination points, the total disclination strength is topologically quantized by the Hopf indices and Brouwer degrees at the singularities of the general director field when the Jacobian determinant of the general director field does not vanish. When the Jacobian determinant vanishes, the origin, annihilation, and bifurcation of disclination points are detailed in the neighborhoods of the limit point and bifurcation point, respectively. The branch solutions at the limit point and the different directions of all branch curves at the first- and second-order degenerated points are calculated. It is pointed out that a disclination point with a higher strength is unstable and will evolve to the lower strength state through the bifurcation process. An original disclination point can split into at most four disclination points at one time.     

空心阴极灯激发的微波等离子体炬原子/离子荧光光谱研究--钙的原子/离子荧光光谱

用强短脉冲供电技术的空心阴极灯作激发源、微波等离子体炬作原子／离子化器，建立了原子／离子荧光光谱实验装置。详细研究了微波等离子体功率、观察高度、空心阴极灯电流等因素对原子／离子荧光信号强度的影响，测量了系统对Ca的原子／离子荧光光谱的检出限。     

超导电流密度研究

由 GL超导波函数及 GL第二方程导出了零场下超导电流密度矢量的数学表达式 ,讨论了相关物理意义 ;并由 London第二方程验证了其正确性。     

电流并联负反馈放大器实验的研究

用实验的方法，研究电流并联负反馈对放大器性能的改善，提出电流型、并联型负反馈放大器性能参数的测量方法。     

不同入射角度下强流脉冲电子束能量沉积剖面和束流传输系数模拟计算

 强流脉冲电子束在材料中的能量沉积剖面、能量沉积系数和束流传输系数受其入射角的影响很大，理论计算了0.5~2.0MeV的电子束以不同的入射角在Al材料中的能量沉积剖面和能量沉积系数，并且还计算了0.4~1.4MeV电子束以不同入射角穿透不同厚度C靶的束流传输系数。计算结果表明，随着入射角的增大，靶材表面层单位质量中沉积的能量增大，电子在靶材料中穿透深度减小，能量沉积系数减小，相应的束流传输系数也减小；能量为0.5~2.0MeV的电子束当入射角在60°~70°时在材料表面层单位质量中沉积的能量较大。     

Analytical modeling and simulation of subthreshold characteristics of back-gated SSGOI and SSOI MOSFETs: A comparative study

The Silicon–Germanium-on-Insulator (SGOI) and Silicon-on-Insulator (SOI) based MOS structures are spearheading the strained-Si technology. The present work compares the subthreshold characteristics of two short-channel back-gated (BG) strained-Si-on-SGOI (SSGOI) and BG strained-Si-on-Insulator (SSOI) MOSFETs, and provides some solutions to overcome the degradation in subthreshold characteristics with the unrelenting downscaling of the devices. Subthreshold behaviors of the MOS structures are based on surface potential model which is determined by solving the 2D Poisson's equation with suitable boundary conditions by evanescent mode analysis for both of the MOS structures. The closed form expressions for threshold voltage, subthreshold current and subthreshold swing have been derived for symmetrical as well as independent gate operation (IGO). In addition, the Electrostatic integrity (EI) factors for SSOI and SSGOI MOS structures have been estimated and compared with Double-Gate (DG) MOSFET. The numerical simulation results, obtained by ATLAS?, a 2D device simulator from Silvaco, have been used to assess the validity of the models.     

医用重离子回旋加速器引出系统设计

紧凑型回旋加速器作为重离子医学专用装置同步加速器的注入器,其引出系统设计所用的磁场为TOSCA模型计算磁场。通过单粒子轨道计算确定引出系统的元件类型及基本参数;通过多粒子跟踪确定最终的元件参数和束流参数。为了提高引出效率,改善引出束流品质,在引出位置磁场梯度较大的位置,安放了一块C型磁铁,以改善此处的磁场梯度。同时,为了消除此C型磁铁对主磁场的影响,在此区域安放了一对线圈。计算结果表明引出系统的设计能够保证引出束流的强度和品质符合同步加速器的要求。     

用Josephson结电子模拟器测量磁通量子2e/h

介绍用Josephson结电子模拟器在政党温度下，模拟测量磁通量子2e/h，用模拟器来研究Josephosn结的特性。该实验可作为普通物理实验中课题设计实验的一个内容。