全文获取类型
收费全文 | 609篇 |
免费 | 27篇 |
国内免费 | 3篇 |
专业分类
化学 | 306篇 |
晶体学 | 33篇 |
力学 | 3篇 |
数学 | 4篇 |
物理学 | 293篇 |
出版年
2025年 | 1篇 |
2024年 | 11篇 |
2023年 | 10篇 |
2022年 | 18篇 |
2021年 | 10篇 |
2020年 | 23篇 |
2019年 | 19篇 |
2018年 | 13篇 |
2017年 | 17篇 |
2016年 | 18篇 |
2015年 | 16篇 |
2014年 | 13篇 |
2013年 | 68篇 |
2012年 | 67篇 |
2011年 | 34篇 |
2010年 | 24篇 |
2009年 | 25篇 |
2008年 | 20篇 |
2007年 | 14篇 |
2006年 | 15篇 |
2005年 | 11篇 |
2004年 | 19篇 |
2003年 | 14篇 |
2002年 | 15篇 |
2001年 | 29篇 |
2000年 | 8篇 |
1999年 | 9篇 |
1998年 | 15篇 |
1997年 | 11篇 |
1996年 | 16篇 |
1995年 | 2篇 |
1994年 | 3篇 |
1993年 | 5篇 |
1992年 | 7篇 |
1991年 | 3篇 |
1990年 | 4篇 |
1989年 | 3篇 |
1988年 | 2篇 |
1987年 | 3篇 |
1986年 | 1篇 |
1985年 | 3篇 |
1984年 | 2篇 |
1983年 | 2篇 |
1982年 | 5篇 |
1981年 | 4篇 |
1980年 | 3篇 |
1979年 | 1篇 |
1978年 | 1篇 |
1977年 | 1篇 |
1976年 | 1篇 |
排序方式: 共有639条查询结果,搜索用时 0 毫秒
21.
The electron paramagnetic resonance (EPR) g‐factor formulas are constructed for ZnSe:Ti2+, CdTe:Ti2+ and ZnSe:V3+ crystals based on the contributions of the charge‐transfer levels and the spin‐orbit coupling effect of the central ion and the ligands. The EPR g factors are calculated from these formulas, and the calculated values agree well with the experimental ones. The contribution rates of the charge‐transfer levels are 10.1, 7.6 and 24.9% for ZnSe:Ti2+, CdTe:Ti2+ and ZnSe:V3+ crystals, respectively. The g factors obtained from the one‐spin‐orbit‐parameter model are also given for comparison. 相似文献
22.
Kevin H. Stone Saul H. Lapidus Peter W. Stephens 《Journal of Applied Crystallography》2009,42(3):385-391
A modification to the usual least‐squares analysis is implemented for the robust refinement of structural parameters from powder diffraction data in the presence of unmodeled impurities. This is accomplished in the program TOPAS‐Academic by an iterative reweighting of the data as the model is refined. The method is tested and characterized using mixtures of known materials, acetaminophen and ibuprofen. The technique is also used to refine two previously unknown structures. 相似文献
23.
Gang Yang Jayesh Govani Hao Mei Yutong Guan Guojian Wang Mianliang Huang Dongming Mei 《Crystal Research and Technology》2014,49(4):269-275
Zone refining is one of the most important procedures to purify germanium crystals for the fabrication of detectors in our laboratory. In order to properly zone refine high‐purity germanium crystals, it is important to develop perfect cleaning procedures for raw materials, quartz tubes, and the containers holding raw materials. Additionally, vacuum levels, container types, the correct combination of ambient gases, the speed of zone travel, and the ratio of ingot length to molten zone length, all need to be carefully studied in order to obtain the best results possible. In this work, we investigate a number of influential factors in perfecting high‐purity germanium crystal growth, specifically: cleaning procedures, boat composition, vacuum levels in the chamber, zone travel speed, and the ratio of ingot length to molten zone length. Using the van der Pauw Hall technique, we were able to measure the electrical properties of zone‐refined ingots and analyze the origin and distribution of three main impurity elements (boron, aluminum and phosphorus) thereby allowing us to study potential contamination sources. After detailed analysis on the various influential factors, we were able to optimize the zone‐refining procedures. 相似文献
24.
Bianca Haberl Malcolm Guthrie David J. Sprouster Jim S. Williams Jodie E. Bradby 《Journal of Applied Crystallography》2013,46(3):758-768
The pressure‐induced phase transformations of a form of amorphous silicon (a‐Si) with well characterized impurity levels and structure are examined at pressures up to 40 GPa using in situ synchrotron X‐ray radiation. At ∼12 GPa crystallization commences, but it is not completed until ∼16 GPa. At higher pressures, not all the crystalline phases observed for crystalline silicon (c‐Si) appear. On pressure release, none of the metastable crystalline phases observed for c‐Si nucleate. Instead an amorphous phase is re‐formed. This is in contrast to all previous diamond‐anvil studies on a‐Si. If full pressure‐induced crystallization occurred, the material remained crystalline on unloading. The formation of a‐Si upon unloading was only observed when a high‐density amorphous phase was reported on loading. The fully characterized nature of the a‐Si used in this current study allows for the interpretation of this significant diversity in terms of impurity content of the a‐Si used. Namely, this suggests that `ideal' (pure, voidless, structurally relaxed) a‐Si will follow the same transition pathway as observed for c‐Si, while crystallization of a‐Si forms with a high impurity content is retarded or even inhibited. The a‐Si used here straddles both regimes and thus, although full crystallization occurs, the more complex crystalline structures fail to nucleate. 相似文献
25.
Element‐specific structural analysis at the buried interface of a low electron density contrast system is important in many applied fields. The analysis of nanoscaled Si/B4C buried interfaces is demonstrated using resonant X‐ray reflectivity. This technique combines information about spatial modulations of charges provided by scattering, which is further enhanced near the resonance, with the sensitivity to electronic structure provided by spectroscopy. Si/B4C thin‐film structures are studied by varying the position of B4C in Si layers. Measured values of near‐edge optical properties are correlated with the resonant reflectivity profile to quantify the element‐specific composition. It is observed that, although Si/B4C forms a smooth interface, there are chemical changes in the sputtered B4C layer. Nondestructive quantification of the chemical changes and the spatial distribution of the constituents is reported. 相似文献
26.
《Analytical letters》2012,45(12):2162-2170
Abstract For determining Hg in solutions in the ppb to ppt range using boron-doped diamond (BDD) electrochemistry, the role of an added gold solution for enhanced sensitivity is investigated. Using differential pulse anodic stripping voltammetry (DPASV), peaks due to Cu and Ag as impurities from gold are identified. With the proper choice of the potential for deposition, effects of the impurities are minimized and an electrode regeneration procedure is devised and tested, resulting in reproducible slopes of the calibration curves in successive runs. The location and shift of the DPASV peak potentials with concentration are explained with the use of the Nernst equation. 相似文献
27.
There has been growing interest in the use of modified-carbon-nanotube electrodes in applications such as the electrochemical detection of biologically significant compounds, owing to their apparent "electrocatalytic" properties and ability to enhance oxidative signals. In spite of their salient properties, little work has been done to further examine the reasons for these reported characteristics. In this report, we present clear evidence that the presence of nanographite impurities within carbon nanotubes (CNTs) is responsible for providing the previously reported enhanced electrochemical response. We have demonstrated this effect on homocysteine, N-acetyl-L-cysteine, nitric oxide, and insulin, which are important biological agents in the body. Moreover, we also showed that the influence of nanographite impurities on the electrochemistry of carbon nanotubes is prevalent among a variety of CNTs, such as single-walled CNTs, double-walled CNTs, and few-walled CNTs. Our findings will have a profound influence upon the biomedical applications of CNTs. 相似文献
28.
A method for preconcentration of poorly volatile impurities by continuous thermodesorption of the major component on a TLC
plate is proposed. The method provides multiple (200–500) concentration of the organic impurities present in the initial solution.
A simple device for such concentration is suggested.
Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 10, pp. 2075–2076, October, 1998. 相似文献
29.
State of Molecules and Ions in the Structural Channels of Synthetic Beryl with an Ammonium Impurity 总被引:1,自引:0,他引:1
The contents of the structural channels of beryl, grown hydrothermally from an ammonium-containing solution, were investigated by IR and EPR spectroscopy. Using IR spectroscopy we found that water molecules, ammonium ions, and a small number of HCl molecules enter the structural channels of beryl in the course of mineral growth. In these beryls, the ammonium ions play the role of alkali cations. The ammonium ions are as rigidly fixed in the lattice as are water molecules; they are eliminated by calcination at high temperatures close to the decomposition temperature. On exposure to radiation at 77 K, the paramagnetic NH
3
+
and H0 radicals are stabilized in the structural channels of beryl. In addition to the known H0 radical, other states of atomic hydrogen, interacting with medium protons, are observed as well. For one of the additional radicals, Hb, we suggest the model of atomic hydrogen stabilized at the center of a silicon-oxygen ring with two water molecules in adjacent cavities. 相似文献
30.
The genotoxic impurities (GIs) are carcinogenic hence its management during synthesis of pharmaceuticals is very important to be detected even in trace level for the safe use of the drugs. The presence of drug substance/drug product DNA-reactive impurities poses a significant problem for drug regulators as well as industry. There are several regulatory guidelines and position papers focused on controlling the amount of impurities within the specified limits. The present compilation gives an account of updated information about GIs and reviews the regulatory aspects for GIs in active pharmaceutical ingredients/drug formulations. A detailed discussion about control strategies in the context of GIs is also described precisely. The analysis of GIs is a challenging and complex aspect of the drug development process. Control and determination of these impurities at ppm or ppb levels are significant challenges for analysts, therefore the approaches for the analysis of GIs have also been discussed. 相似文献