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针对VO2薄膜在微测辐射热计上的应用,采用射频反应溅射法,在室温下制备氧化钒薄膜;研究了氧分压对薄膜沉积速率、电学性质及成分的影响.通过调节氧分压,先获得成分接近VO2的非晶化薄膜,再在400℃空气中氧化退火,便可制得高电阻温度系数,低电阻率的VO2薄膜,电阻温度系数约为-4%/℃,薄膜方块电阻为R□为100—300kΩ;薄膜在室温下沉积,400℃下退火的制备方法与微机电加工(micro electromechanic
关键词:
二氧化钒
电阻温度系数
氧分压
射频反应溅射法 相似文献
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B. Dubrulle F. Hersant 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,26(3):379-386
We generalize an analogy between rotating and stratified shear flows. This analogy is summarized in Table 1. We use this analogy
in the unstable case (centrifugally unstable flow vs. convection) to compute the torque in Taylor-Couette configuration, as a function of the Reynolds number. At low Reynolds
numbers, when most of the dissipation comes from the mean flow, we predict that the non-dimensional torque G = T/ν2
L, where L is the cylinder length, scales with Reynolds number R and gap width η, G = 1.46η3/2(1 - η)-7/4
R
3/2. At larger Reynolds number, velocity fluctuations become non-negligible in the dissipation. In these regimes, there is no
exact power law dependence the torque versus Reynolds. Instead, we obtain logarithmic corrections to the classical ultra-hard (exponent 2) regimes: G = 0.50
. These predictions are found to be in excellent agreement with avail-able experimental data. Predictions for scaling of velocity
fluctuations are also provided.
Received 7 June 2001 and Received in final form 7 December 2001 相似文献
16.
S. Meenakshi B.K. Godwal I. Orgzall S. Tkachev 《Journal of Physics and Chemistry of Solids》2006,67(8):1660-1667
We report the results of an X-ray diffraction study of CdAl2Se4 and of Raman studies of HgAl2Se4 and ZnAl2Se4 at room temperature, and of CdAl2S4 and CdAl2Se4 at 80 K at high pressure. The ambient pressure phase of CdAl2Se4 is stable up to a pressure of 9.1 GPa above which a phase transition to a disordered rock salt phase is observed. A fit of the volume pressure data to a Birch-Murnaghan type equation of state yields a bulk modulus of 52.1 GPa. The relative volume change at the phase transition at ∼9 GPa is about 10%. The analysis of the Raman data of HgAl2Se4 and ZnAl2Se4 reveals a general trend observed for different defect chalcopyrite materials. The line widths of the Raman peaks change at intermediate pressures between 4 and 6 GPa as an indication of the pressure induced two stage order-disorder transition observed in these materials. In addition, we include results of a low temperature Raman study of CdAl2S4 and CdAl2Se4, which shows a very weak temperature dependence of the Raman-active phonon modes. 相似文献
17.
The molding processes of polymer melts involve geometrically complex dies. Such dies are usually tapered or streamlined to achieve a maximum output rate under conditions of laminar flow. The model of a generalized second-grade fluid of power-law type is used and the results obtained are illustrated by examples of convergent flows in conical and wedge-shaped dies. 相似文献
18.
Alexander Krasnosel'skii Dmitrii Rachinskii 《NoDEA : Nonlinear Differential Equations and Applications》2002,9(1):93-115
We consider autonomous systems with a nonlinear part depending on a parameter and study Hopf bifurcations at infinity. The
nonlinear part consists of the nonlinear functional term and the Prandtl--Ishlinskii hysteresis term. The linear part of the
system has a special form such that the close-loop system can be considered as a hysteresis perturbation of a quasilinear
Hamiltonian system. The Hamiltonian system has a continuum of arbitrarily large cycles for each value of the parameter. We
present sufficient conditions for the existence of bifurcation points for the non-Hamiltonian system with hysteresis. These
bifurcation points are determined by simple characteristics of the hysteresis nonlinearity. 相似文献
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关于AOR迭代法的研究 总被引:5,自引:0,他引:5
陈恒新 《应用数学与计算数学学报》2002,16(1):40-46
本文论证了严格对角占优矩阵之AOR法的误差估计式中的误差估计常数hγ,ω(0≤γ≤ω0)的最小值是h1,1. 相似文献