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51.
为了改善GaN HEMT的自热效应,集成高热导率的金刚石衬底有助于增强器件有源区的热量耗散。然而,化学气相淀积(CVD)生长的多晶金刚石(PCD)具有柱状晶粒结构,导致了各向异性的材料热导率,且其热导率值与生长厚度有关。为此,通过建模金刚石生长过程中晶粒尺寸的演变过程,计算了金刚石沿面内和截面方向的热导率。基于该PCD热导率模型,利用计入材料非线性热导率的GaN器件热阻解析模型,计算得到了GaN HEMT沟道温度的波动范围,并分析了其与器件结构(栅长、栅宽、栅间距、衬底厚度)和功耗的依赖关系。最后,通过与有限元(FEM)仿真结果对比,分区域提取了GaN HEMT器件中PCD衬底的有效热导率,分别为260~310 W/(m·K)和1 250~1 450 W/(m·K)。本文的计算为预测金刚石衬底上GaN HEMT器件的沟道温度提供了快速、有效的方法。 相似文献
52.
利用正向交流(ac)小信号方法对GaN发光二极管的电容-电压特性进行测量,可以观察到GaN发光二极管中的负电容现象。正向偏压越大,测试频率越低,负电容现象越明显。测量到的负电容现象是表象,不存在负电容;提出GaN发光二极管p-n结的结电容在特定的正向电压范围内等效于可变电容。分析可变电容对正向交流小信号响应得到:特定参数的可变电容使结电容电流相位落后于交流小信号电压相位π/2,使得在测量中表现为负电容。发现表观电容-正向电压曲线的极值点与理论模型相吻合,证明了该理论模型的正确性。 相似文献
53.
We studied influence of rapid thermal annealing on electrical parameters of SF6 plasma treated AlGaN/GaN heterostructures. The main emphasis by the evaluation was laid on C-V measurement and simulation, but also I-V and SIMS measurement were used. It was found that the diminished sheet carrier concentration of a two-dimensional electron gas after plasma treatment recovered significantly at the temperature of 500 °C. By using C-V measurement, it was possible to assess besides the changes of the two-dimensional electron gas concentration after annealing also the changes in the Schottky barrier heights and to find out the doping concentration in AlGaN barrier and GaN channel layer. The trend in Schottky barrier height changes after annealing was confirmed also by I-V measurement. 相似文献
54.
Amorphous gallium nitride (a-GaN) thin films were deposited on glass substrate by electron beam evaporation technique at room
temperature and high vacuum using N
2 as carrier gas. The structural properties of the films was studied by X-ray diffraction (XRD) and scanning electron microscope
(SEM). It was clear from XRD spectra and SEM study that the GaN thin films were amorphous. The absorbance, transmittance and
reflectance spectra of these films were measured in the wavelength range of 300–2200 nm. The absorption coefficient spectral
analysis in the sharp absorption region revealed a direct band gap of E
g = 3:1 eV. The data analysis allowed the determination of the dispersive optical parameters by calculating the refractive
index. The oscillator energy E
0 and the dispersion energy E
d, which is a measure of the average strength of inter-band optical transition or the oscillator strength, were determined.
Electrical conductivity of a-GaN was measured in a different range of temperatures. Then, activation energy of a-GaN thin
films was calculated which equalled E
a = 0:434 eV. 相似文献
55.
GaN samples, containing various concentrations of carbon and doped intentionally with silicon, have been grown heteroepitaxially on sapphire using metal-organic-chemical-vapor deposition. Previous electrical and optical data, together with Density Functional calculations, have suggested that carbon is incorporated at acceptor and donor substitutional sites in this material; the relative importance of each is determined by the Fermi level position and the growth conditions. Here the luminescence behavior of these materials is examined in more detail, including spectral, temperature, and time dependences under ultraviolet light and electron beam excitation conditions. Particular attention is given to the commonly observed “yellow band” at , a blue luminescence at seen only in samples where carbon is the majority dopant, and ultraviolet bands near . Our data suggest that the latter two bands are both donor-acceptor related with the final state being the negatively charged state of a carbon atom substituting for nitrogen. In samples where carbon is the majority dopant, extended luminescence excitation at low temperatures results in large changes in the brightness of the yellow and blue luminescence bands. These effects are similar to other recent observations of luminescence metastability in high resistivity GaN, and we suggest that carbon plays a crucial role in this phenomenon. 相似文献
56.
Sun Chi-Kuang Huang Yong-Liang Liang Jian-Chin Wang Jiun-Cheng Gan Kian-Giap Kao Fu-Jen Keller Stacia Mack Michael P. Mishra Umesh Denbaars Steven P. 《Optical and Quantum Electronics》2000,32(4-5):619-640
We have studied third order nonlinearities, including two-photon absorption coefficient and nonlinear refractive index n
2, of GaN in below bandgap ultraviolet (UV) wavelength regime by using UV femtosecond pulses. Two-photon absorption was investigated by demonstrating femtosecond UV pulsewidth autocorrelation in a GaN thin film while femtosecond Z-scan measurements revealed information for both n
2 and . The distribution of n
2 versus wavelength was found to be consistent with a model described by the quadratic Stark effect, which is the dominant factor contributed to the nonlinear refractive index near the bandgap. Large on the order of 10 cm/GW and large negative n
2 with a magnitude on the order of several 10–12 cm2/W were obtained. The at near mid-gap infrared (IR) wavelength was also found to be on the order of several cm/GW by using two-photon-type autocorrelations in a GaN thin film. Taking advantage of the large two-photon absorption at mid-gap wavelengths, we have demonstrated excellent image quality on two-photon confocal microscopy, including two-photon-scanning-photoluminescence imaging and two-photon optical-beam-induced current microscopy, on a GaN Hall measurement sample and an InGaN green light emitting diode. 相似文献
57.
研究了钝化在抑制电流崩塌的同时,会引起HEMT器件击穿电压的下降.而采用场板结构的AlGaN/GaN场板HEMT器件(FP-HEMT)的击穿电压从46V提高到了148V,表明了场板对提高击穿电压有显著作用(3倍以上).接着,比较了FP-HEMT器件与常规HEMT器件,钝化后HEMT器件在应力前后的电流崩塌程度,得出了采用场板结构比之钝化对器件抑制电流崩塌有更明显作用的结论.从理论上和实验上都表明,采用场板结构能够很好解决提高击穿电压与抑制电流崩塌之间的矛盾.
关键词:
GaN
场板
击穿电压
电流崩塌 相似文献
58.
M. Sabooni M. Esmaeili H. Haratizadeh B. Monemar P. Paskov S. Kamiyama M. Iwaya H. Amano I. Akasaki 《Opto-Electronics Review》2007,15(3):163-167
We report results from optical spectroscopy such as photoluminescence (PL) and time resolved photo-luminescence (TRPL) techniques
from different well width MOCVD grown GaN/Al0.07Ga0.93N MQW samples. There is evidence of localization at low temperature in all samples. The decay time of all samples becomes
non-exponential when the detection energy is increased with respect to the peak of the emission. Localization of carriers
(excitons) is demonstrated by the “S-shape” dependences of the PL peak energies on the temperature. The time-resolved PL spectra
of the 3-nm well multi quantum wells reveal that the spectral peak position shifts toward lower energies as the decay time
increases and becomes red-shifted at longer decay times. There is a gradient in the PL decay time across the emission peak
profile, so that the PL process at low temperatures is a free electron-localized hole transition. 相似文献
59.
利用方势阱模型对InxGa1-xN/GaN MQWs结构的光特性进行了量子力学定性理论分析.并在MO源流量恒定条件下,在570℃~640℃范围内进行了不同生长温度的多量子阱制备实验,对InxGa1-xN制备过程中的In组份掺入效率的温度依赖关系进行研究.通过对制备样品的PL谱测量分析,得到了587℃~600℃的In组份最佳掺入温度区间. 相似文献
60.