Surface‐diffusion‐induced spontaneous Ga incorporation process is demonstrated in ZnO nanowires grown on GaN substrate. Crucially, contrasting distributions of Ga atoms in axial and radial directions are experimentally observed. Ga atoms uniformly distribute along the ~10 μm long ZnO nanowire and show a rapidly gradient distribution in the radial direction, which is attributed substantially to the difference between surface and volume diffusion. The understanding on the incorporation process can potentially modulate doping and properties in semiconductor nanomaterials.
Generation of scratches on surface of m‐plane GaN substrates due to polishing was studied by atomic force microscopy (AFM). For epi‐ready substrates AFM images confirm a flat surface with the atomic step roughness while a lot of scratches are visible in AFM images for partially polished GaN substrates. The Fourier analysis of AFM images show that scratches propagate easier along {c‐plane} and {a‐plane} directions on m‐plane GaN surface. This observation is an evidence of anisotropy of mechanical properties of GaN crystals in the micro‐scale. This anisotropy is directly correlated with the symmetry and atomic arrangement of m‐plane GaN. 相似文献
Biosensors based on field‐effect transistor (FET) structures have attracted considerable attention because they offer rapid, inexpensive parallel sensing and ultrasensitive label‐free detection. However, long‐term repeatable detection cannot be performed, and Ag/AgCl reference electrode design is complicated, which has hindered FET biosensors from becoming truly wearable health‐monitoring platforms. In this paper, we propose a novel wearable detection platform based on AlGaN/GaN high‐electron‐mobility transistors (HEMTs). In this platform, a sweatband was used to continuously collect sweat, and a pH detecting unit and a potassium ion detecting unit were formed by modifying different sensitive films to realize the long‐term stable and repeatable detection of pH and potassium ions. Experimental data show that the wearable detection platform based on AlGaN/GaN HEMTs has good sensitivity (pH 3–7 sensitivity is 45.72 μA/pH; pH 7.4–9 sensitivity is 51.073 μA/pH; and K+ sensitivity is 4.94 μA/lgαK+), stability (28 days) and repeatability (the relative standard deviation (RSD) of pH 3–7 sensitivity is 2.6 %, the RSD of pH 7.4–9 sensitivity is 2.1 %, and the RSD of K+ sensitivity is 7.3 %). Our newly proposed wearable platform has excellent potential for predictive analytics and personalized medical treatment. 相似文献
The epitaxial growths of GaN films and GaN-based LEDs on various patterned sapphire substrates (PSSes) with different values of fill factor (f) and slanted angle (θ) are investigated in detail. The threading dislocation (TD) density is lower in the film grown on the PSS with a smaller fill factor, resulting in a higher internal quantum efficiency (IQE). Also the ability of the LED to withstand the electrostatic discharge (ESD) increases as the fill factor decreases. The illumination output power of the LED is affected by both θ and f. It is found that the illumination output power of the LED grown on the PSS with a lower production of tanθ and f is higher than that with a higher production of tanθ and f. 相似文献