Gravitational Deflection of Massive Particles by a Schwarzschild Black Hole in Radiation Gauge*

The exact metric of a Schwarzschild black hole in the true radiation gauge was recently reported.In this work, we base on this gravity and calculate the gravitational deflection of relativistic massive particles up to the fourth post-Minkowskian order. It is found that the result is consistent with the previous formulations for both the case of dropping the fourth-order contribution and the case of light deflection. Our result might be helpful for future high-accuracy observations.     

长程电子关联对有限长聚乙炔链中极化子态的影响

本文采用扩展Hubbard模型, 加上长程关联哈密顿量,在自然边界条件下用自洽场方法研究了有限长反式聚乙炔链中极化子的问题。计算了长程电子关联对极化子的影响并计算了极化子的长程关联能。计算发现长程电子关联使极化子的位形变宽变浅(局域性减弱),在极化子区域,长程电子关联能比平均长程电子关联能要大。当链长增加到100格点以上时,电子极化子和空穴极化子的平均关联能趋于-0.1663eV,而在极化子区域,电子极化子和空穴极化子的平均关联能趋于-0.1868eV。     

Non-equilibrium Landauer transport model for Hawking radiation from a Reissner—Nordstrom black hole

The recent work of Nation et al., in which the Hawking radiation energy and entropy flow from a black hole is considered to be produced in a one-dimensional Landauer transport process, is extended to the case of a Reissner- Nordstrom black hole. The energy flow contains not only the contribution of the thermal flux but also that of the particle flux. It is found that the charge can also be transported via the one-dimensional quantum tunnel. Because of the existence of the electrostatic potential, the entropy production rate is shown to be smaller than that of the Schwarzschild black hole.     

Influence of a two-dimensional electron gas on current—voltage characteristics of Al0.3{Ga}0.7 N/GaN high electron mobility transistors

The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors（HEMTs） are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional electron gas（2DEG） in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 10^13 A/m^2 within a very narrow region（about 5 nm）.For a current density of 7 × 10^13 A/m62 passing through the 2DEG channel with a 2DEG density of above 1.2 × 10^17 m^-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.     

衬底对PTCDA薄膜结构与电荷输运特性的影响

在不同导电衬底(Au,Al和ITO)上制备了PTCDA薄膜,用XRD和AFM技术研究了PTCDA薄膜的结构和表面形貌。结果表明,薄膜中的大部分PTCDA分子平面与衬底不平行,这表明薄膜垂直方向的电流传导将以电子传输为主;在ITO和Au衬底上生长的PTCDA薄膜晶粒排列规则,在薄膜垂直方向呈现出较好的电子传输性能;而在Al衬底上生长的PTCDA薄膜晶粒排列无序,电子传输性能差。通过制备单层结构有机薄膜器件,研究了PTCDA薄膜垂直方向的电子迁移率。综合应用金属-有机界面的热电子发射理论和有机层体内空间电荷限制传导理论,并考虑电场强度对迁移率变化的影响,对ITO/PTCDA/Al器件的电流密度-电压曲线进行拟合,得到ITO衬底上生长的PTCDA薄膜在垂直方向随电场强度变化的电子迁移率数值。     

小孔等离子体运动实验方法

在间接驱动惯性约束聚变的黑腔中,辐射烧蚀的高Z等离子体的流体力学运动过程对激光注入黑腔的效率、辐射场均匀性和通过诊断口的黑腔辐射温度诊断都有显著影响。为研究诊断口在黑腔辐射场中的等离子体缩口过程,用激光产生X光辐射加热低Z泡沫填充的金黑腔诊断口,以激光辐照钛平面靶产生的2～5 keV高能段窄能区X光作为背光源,用X光分幅相机获得了源靶和小孔靶两种靶型的小孔等离子体运动过程图像,研究了X光烧蚀的小孔等离子体的流体力学运动过程,探索了定量测量小孔等离子体面密度的空间分布与时间演化过程的实验诊断方法,初步给出小孔等离子体的面密度。     

椭圆柱形光学黑洞红外辐射特性分析

本文主要采用时域有限差分(FDTD)方法计算了二维椭圆柱形光学黑洞的红外辐射特性。并且采用几何光学近似(GOA)对椭圆柱形的光学黑洞的光线入射轨迹进行分析和比较。研究结果表明,FDTD计算的光学黑洞内的能流分布结果与GOA计算的光学黑洞内的光线入射轨迹结果相吻合,椭圆柱形光学黑洞的红外辐射特性主要受折射率梯度和入射波长的影响。     

Organic semiconductors for solution-processable field-effect transistors (OFETs)

The cost-effective production of flexible electronic components will profit considerably from the development of solution-processable, organic semiconductor materials. Particular attention is focused on soluble semiconductors for organic field-effect transistors (OFETs). The hitherto differentiation between "small molecules" and polymeric materials no longer plays a role, rather more the ability to process materials from solution to homogeneous semiconducting films with optimal electronic properties (high charge-carrier mobility, low threshold voltage, high on/off ratio) is pivotal. Key classes of materials for this purpose are soluble oligoacenes, soluble oligo- and polythiophenes and their respective copolymers, and oligo- and polytriarylamines. In this context, micro- or nanocrystalline materials have the general advantage of somewhat higher charge-carrier mobilities, which, however, could be offset in the case of amorphous, glassy materials by simpler and more reproducible processing.     

Meta Junction Promoting Efficient Thermally Activated Delayed Fluorescence in Donor-Acceptor Conjugated Polymers

The meta junction is proposed to realize efficient thermally activated delayed fluorescence (TADF) in donor–acceptor (D-A) conjugated polymers. Based on triphenylamine as D and dicyanobenzene as A, as a proof of concept, a series of D-A conjugated polymers has been developed by changing their connection sites. When the junction between D and A is tuned from para to meta, the singlet–triplet energy splitting (ΔE_ST) is found to be significantly decreased from 0.44 to 0.10 eV because of the increasing hole–electron separation. Unlike the para-linked analogue with no TADF, consequently, the meta-linked polymer shows a strong delayed fluorescence. Its corresponding solution-processed organic light-emitting diodes (OLEDs) achieve a promising external quantum efficiency (EQE) of 15.4 % (51.9 cd A⁻¹, 50.9 lm W⁻¹) and CIE coordinates of (0.34, 0.57). The results highlight the bright future of D-A conjugated polymers used for TADF OLEDs.