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101.
大口径反射镜是大型反射式光学系统中关键的光学元件,在工作波段的反射率直接决定了光学系统的性能。随着地基、天基观测设备的发展,对大口径反射镜高反射膜提出了更宽的工作波段、更高的反射率、更好的环境适应性等要求。针对这些挑战,各种新的膜系结构、新的镀制方法、新的膜层材料纷纷出现,满足了大口径反射镜高反射膜的各种需求。本文对近些年国内外的大口径反射镜高反射膜研究进展予以综述,并预测大口径反射镜高反膜制备的技术趋势将由铝反射膜向银反射膜、由热蒸发向磁控溅射发展。 相似文献
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C. Sternemann 《高压研究》2016,36(3):275-292
ABSTRACTX-ray Raman scattering spectroscopy is an emerging method in the study of low and intermediate Z elements' core-electron excitations at extreme conditions in order to reveal information on local structure and electronic state of matter in situ. We discuss the capabilities of this method to address questions in Earth materials' science and demonstrate its sensitivity to detect changes in the oxidation state, electronic structure, coordination, and spin state. Examples are presented for the study of the oxygen K-, silicon L- and iron M-edges. We assess the application of both temperature and pressure in such investigations exploiting diamond anvil cells in combination with resistive or laser heating which is required to achieve realistic conditions of the Earth's crust, mantle, and core. 相似文献
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Diamond, as the hardest known material, has been widely used in industrial applications as abrasives, coatings, and cutting and polishing tools, but it is restricted by several shortcomings, e.g., its low thermal and chemical stability. Considerable efforts have been devoted to designing or synthesizing the diamond-like B–C–N–O compounds, which exhibit excellent mechanical property. In this paper, we review the recent theoretical design of diamond-like superhard structures at high pressure. In particular, the recently designed high symmetric phase of low-energy cubic BC3 meets the experimental observation, and clarifies the actual existence of cubic symmetric phase for the compounds formed by B–C–N–O system,besides the classical example of cubic boron nitride. 相似文献
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Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer 下载免费PDF全文
A new ultra-low specific on-resistance(Ron,sp) vertical double diffusion metal–oxide–semiconductor field-effect transistor(VDMOS) with continuous electron accumulation(CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the Ron,sp but also makes the Ron,sp almost independent of the n-pillar doping concentration(Nn). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the Nn, and further reduces the Ron,sp.Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the Ron,sp by 80% compared with the conventional super-junction VDMOS(CSJ-VDMOS)at the same high breakdown voltage(BV). 相似文献
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本文在双面YBCO高温超导薄膜上设计并制备了两节大功率超导滤波器,根据滤波器功率承载能力与最大电流密度之间的关系,减小电流密度和分散电流密度的分布是提高功率承载能力的关键.本文采用增加超导谐振器尺寸、优化几何结构及改进馈线耦合方式的方法,设计了两节2 GHz频段梭型谐振器结构的滤波器.设计及测量结果显示了馈线结构及谐振器几何尺寸优化程度对超导滤波器功率承载能力有不同程度的影响,说明了在大功率超导滤波器设计中应选用无结点间隙耦合式馈线以抑制电流密度的聚集.采用优化后的谐振器结构制备的梭型两节超导滤波器经测试功率承载能力为2 W.超导滤波器的尺寸为25×12 mm LaAlO3基片,中心频率2.022 GHz,相对带宽为2.4%.同时给出了超导滤波器功率测试的结构和方法. 相似文献
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