超导电力技术新进展及其未来发展的思考

近年来高温超导材料研究取得很大进展,它在电力领域的应用研究已受到广泛关注,一些示范样机,诸如高温超导输电电缆、变压器、故障电流限制器、电机和储能装置已经研制成功并投入示范性试验.超导技术是21世纪具有战略经济意义的高新技术,文章将介绍高温超导电力应用研究的新进展及其未来发展的思考。     

X波段介质和金属膜片混合加载行波加速结构的传播特性计算及模型腔的有关研究

计算了X波段(f=9.37GHz)介质和金属膜片混合加载行波加速结构的TM₀₁模和HEM₁₁模的色散曲线, 结果表明HEM₁₁模的截止频率比TM₀₁模的低, 说明与盘荷波导相比, 该种新加速结构单束团的BBU效应得到改善.实验研究优选得到了适用于该种新加速结构的介质(ε_r=5.812). 采用MAFIA程序优化设计了模型腔, 测试频率与设计的数值吻合得很好.     

基于顺序形态变换的生物芯片图像网格化

生物芯片图像网格化是对由生物芯片扫描得到的荧光成像中的信号(Foreground)和背景(Background)进行划分,以便提取各点的吸光度值、面积和吸光度比等荧光点的数据。网格化的准确与否决定了数据提取的正确性。提出了一种运用顺序形态变换理论实现生物芯片荧光图像网格化的方法,通过对百分位值在0~1之间的顺序形态进行变换,可实现像素灰度的极小值、中间值等多刻度值的灰度取值运算。理论分析表明,该算法能够识别信号与背景的边界,可去除噪声等非边界信息,能判断信号区域,可确定荧光点的边界和范围,可实现荧光点阵图像的网格化。试验结果表明,该算法对不同信噪比的荧光图像来说有很强的适应性,可用于高密度生物芯片图像的处理。     

Recent study of nanomaterials prepared by inert gas condensation using ultra high vacuum chamber

The ultra high vacuum chamber was developed in the Department of Nuclear Physics, University of Madras with the funding from DST, India. This UHV chamber is used to prepare nanocrystalline materials by inert gas condensation technique (IGCT). Nanocrystalline materials such as PbF₂, Mn²⁺-doped PbF₂, Sn-doped In₂O₃ (ITO), ZnO, Al₂O₃, Ag₂O, CdO, CuO, ZnSe:ZnO etc., were prepared by this technique and characterized. Results of some of these materials will be presented in this paper. In solid-state²⁰⁷Pb NMR on PbF₂ a separate signal due to the presence of grain boundary has been observed. The structural phase transition pressure during the phase transformation from the cubic phase to orthorhombic phase under high pressure shows an increase with the decrease in grain size. Presence of electronic centres in nanocrystalline PbF₂ is observed from Raman studies and the same has been confirmed by photoluminescence studies. Al₂O₃ was prepared and⁵⁶Fe ions were implanted. After implantation segregation of⁵⁶Fe ions was examined by SEM. The oxidation properties of ITO were studied by HRTEM. As against the expectation of oxide coating on individual nanograins of In-Sn alloy, ITO nanograins grew into faceted nanograins on heat treatment in air and O₂ atmosphere. The growth of ITO under O₂ atmosphere showed pentagon symmetry. The PMN was initially prepared by solid-state reaction. Further, this PMN relaxor material will be used to convert into nanocrystalline PMN by IGCT with sputtering and will be studied     

大口径反射镜高反射膜研究进展

大口径反射镜是大型反射式光学系统中关键的光学元件,在工作波段的反射率直接决定了光学系统的性能。随着地基、天基观测设备的发展,对大口径反射镜高反射膜提出了更宽的工作波段、更高的反射率、更好的环境适应性等要求。针对这些挑战,各种新的膜系结构、新的镀制方法、新的膜层材料纷纷出现,满足了大口径反射镜高反射膜的各种需求。本文对近些年国内外的大口径反射镜高反射膜研究进展予以综述,并预测大口径反射镜高反膜制备的技术趋势将由铝反射膜向银反射膜、由热蒸发向磁控溅射发展。     

Quantum dynamics of charge transfer on the one-dimensional lattice:Wave packet spreading and recurrence

The wave function temporal evolution on the one-dimensional(1D) lattice is considered in the tight-binding approximation. The lattice consists of N equal sites and one impurity site(donor). The donor differs from other lattice sites by the on-site electron energy E and the intersite coupling C. The moving wave packet is formed from the wave function initially localized on the donor. The exact solution for the wave packet velocity and the shape is derived at different values E and C. The velocity has the maximal possible group velocity v = 2. The wave packet width grows with time ～ t1/3and its amplitude decreases ～ t-1/3. The wave packet reflects multiply from the lattice ends. Analytical expressions for the wave packet front propagation and recurrence are in good agreement with numeric simulations.     

X波段新型低阻抗高功率微波源的模拟研究

提出了一种新型低阻抗高功率微波源,能在单个器件内产生两束锁相的相干高功率微波,对两束相干微波进行功率合成有望在单个高功率微波器件中实现更高的功率输出.粒子模拟结果显示,在电压687 k V、磁场0.8 T时,该微波源整体阻抗36?,两束微波的频率都为9.72 GHz,输出功率分别为1.20 GW和2.58 GW,功率效率分别为28%和30%;两束输出微波之间频率抖动小于±3 MHz,相位差抖动小于±3?.     

Spectroscopy of low and intermediate Z elements at extreme conditions: in situ studies of Earth materials at pressure and temperature via X-ray Raman scattering

ABSTRACT

X-ray Raman scattering spectroscopy is an emerging method in the study of low and intermediate Z elements' core-electron excitations at extreme conditions in order to reveal information on local structure and electronic state of matter in situ. We discuss the capabilities of this method to address questions in Earth materials' science and demonstrate its sensitivity to detect changes in the oxidation state, electronic structure, coordination, and spin state. Examples are presented for the study of the oxygen K-, silicon L- and iron M-edges. We assess the application of both temperature and pressure in such investigations exploiting diamond anvil cells in combination with resistive or laser heating which is required to achieve realistic conditions of the Earth's crust, mantle, and core.     

Theoretical design of diamondlike superhard structures at high pressure

Diamond, as the hardest known material, has been widely used in industrial applications as abrasives, coatings, and cutting and polishing tools, but it is restricted by several shortcomings, e.g., its low thermal and chemical stability. Considerable efforts have been devoted to designing or synthesizing the diamond-like B–C–N–O compounds, which exhibit excellent mechanical property. In this paper, we review the recent theoretical design of diamond-like superhard structures at high pressure. In particular, the recently designed high symmetric phase of low-energy cubic BC3 meets the experimental observation, and clarifies the actual existence of cubic symmetric phase for the compounds formed by B–C–N–O system,besides the classical example of cubic boron nitride.     

Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

A new ultra-low specific on-resistance(Ron,sp) vertical double diffusion metal–oxide–semiconductor field-effect transistor(VDMOS) with continuous electron accumulation(CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the Ron,sp but also makes the Ron,sp almost independent of the n-pillar doping concentration(Nn). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the Nn, and further reduces the Ron,sp.Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the Ron,sp by 80% compared with the conventional super-junction VDMOS(CSJ-VDMOS)at the same high breakdown voltage(BV).