大功率LED脉冲位置调制解调设计

脉冲位置调制是室内可见光通信的主要调制方式之一,它具有功率利用率高,频带利用率好,抗干扰性强的特点.为实现室内大功率白光LED照明通信,在分析PPM的原理基础上提出了一种改进的调制方式,给出了这种PPM符号的结构,并设计了大功率LED的驱动电路.其主要特点是由单片机直接输出帧同步信号加PPM信号,不设置保护时隙,其利用...     

Design and construction of multicrystal analyser detectors using Rowland circles: application to MAD26 at ALBA

A concept is given for describing multicrystal analyser detectors (MADs), as they are in use for synchrotron powder diffraction, on the basis of the Rowland circle construction. The Rowland circle is typically used to describe focusing geometries and can be adapted for the case of MADs working at a single energy as well as in a limited energy range. With this construction it is also possible to quantify and optimize the walk of the beam along non‐central crystals which is inevitable in certain detector designs. The results of this geometrical inspection are correlated with a real detector design that is implemented at the ALBA synchrotron facility in Spain. An error budget is given to estimate the influence and amount of tolerance of the manufacturing process.     

核力研究新进展及前沿问题

首先简述核子-核子(NN)相互作用研究的历史发展。然后着重讨论近1/4世纪以来,核力的介子交换模型和各种夸克模型取得的新成就。同时介绍一些所谓高精度现实NN势,从这些"高精度NN势"出发可以计算的核少体系统己超过A=12。特别指出了近十余年来人们以相当大的努力在有效场论框架下建立核物理与QCD的联系。沿此方向的工作也取得骄人成果:己可由手征微扰论推导出满意的模型无关NN势。利用低能到中高能核子探针,人们今天对核子-核子相互作用已了解到什么程度?还有哪些需要研究的问题。尝试回答这些问题是本文的目的。     

强磁场下Cernox^TM温度传感器的磁致电阻效应研究

以Cernox-1070温度传感器为研究对象,研究了其在磁场强度0-16 T和4.2-300K温区下的磁致电阻效应.实验结果表明：CX-1070温度传感器受磁场的影响较小,在16T、4.2-300K的磁效应值为-0.19-2.38%,产生的最大测量误差为0.11K;15-50K温区为磁效应最低的温度区间,在50-300...     

高压拉曼光谱方法研究联苯分子费米共振

测量了0—15 GPa压强下联苯分子的拉曼光谱. 结果表明,随压强增加,分子内和分子间π-π共轭和离域效应增强,谱线的绝对强度变大、蓝移. 联苯分子的两费米共振谱线强度比R_f/a减少,频率差Δ增加,当压强为8 GPa时,费米共振现象消失,利用Betran理论得出了固有频率差Δ₀和耦合系数ω随压强的变化关系,通过高压下相变进行了解释,并探讨了高压下费米共振耦合变弱的机理. 关键词： 联苯 费米共振 高压 拉曼光谱     

粉末高速压制成形过程中的应力波分析

应用离散单元法,模拟了粉末高速压制成形过程中的压力传播过程.根据粉末高速压制成形的工艺特性,把一次压制过程分为弹性加载、塑性变形、弹性卸载三个阶段;基于离散单元法的基本理论,分别建立了三个阶段的控制方程;应用PFC2D软件对粉末高速压制过程模腔内部颗粒的运动状态进行了数值模拟,给出了压坯内部的压力分布,得出了实验中无法测量的压坯内部应力传播波形.数值模拟结果显示,压力作用曲线表现出明显的弛豫现象,形成了倾斜度不同的锯齿状加载波形和卸载波形,压坯底层的应力波与实验得到的应力波相符. 关键词： 高速压制成形 离散单元法 接触模型 应力波     

晶粒尺寸对气相沉积薄膜磁取向生长的影响研究

为了研究强磁场下薄膜取向生长规律,采用真空蒸发气相沉积法分别制备了不同磁场方向生长的Zn和Bi薄膜.XRD结果发现磁化率差异较小的Zn薄膜在4T时产生了明显的取向生长,而磁化率差异较大的Bi薄膜在5T磁场强度还没有发生取向生长.SEM结果显示Zn薄膜和Bi薄膜晶粒尺寸上有明显的差别,利用Zn薄膜在4T磁场下的取向建立晶粒尺寸和取向生长的对应关系,提出薄膜发生取向时晶粒的磁化能须大于热能kT的420倍.薄膜是否发生取向生长取决于三个因素:薄膜单个晶粒的大小V,材料不同晶向的磁化率差异Δ关键词： 强磁场 磁取向 薄膜生长 材料电磁加工     

Prediction of a bcc-hcp phase transition for Sn: A first-principles study

The high-pressure structural transformation of elemental Sn is studied using an ab initio density functional theory implementation of the metadynamics method that predicts with sufficient compression, Sn will transform from the bcc structure into an hcp structure. The low-free-energy pathway associated with this phase transition is characterized as the Burgers transition mechanism. The superconducting properties of Sn under pressure are also investigated. Both bcc and hcp structures of Sn exhibit very weak electron-phonon coupling and therefore would not sustain superconductivity at high pressure.     

Growth and annealing of zinc-blende CdSe thin films on GaAs (0 0 1) by molecular beam epitaxy

CdSe thin films have been grown on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). The effects of substrate temperature and annealing treatment on the structural properties of CdSe layers were investigated. The growth rate slightly decreases due to the accelerated desorption of Cd from CdSe surface with an increase in the temperature. The sample grown at 260 °C shows a polycrystalline structure with rough surface. As the temperature increases over 300 °C, crystalline CdSe (0 0 1) epilayers with zinc-blende structure are achieved and the structural quality is improved remarkably. The epilayer grown at 340 °C displays the narrowest full-width at half-maximum (FWHM) from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) and the smallest root-mean-square (RMS) roughness of 0.816 nm. Additionally, samples fabricated at 320 °C were annealed in air for 30 min to study the films’ thermal stability. X-ray diffraction (XRD) results indicate that the zinc-blende structure remains unchanged when the annealing temperature is elevated to 460 °C, meaning a good thermal stability of the cubic CdSe epilayers.