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131.
We show that, contrary to earlier reports, application of the one-parameter variational technique to the classical (image) model for H in front of an Al surface leads to energy shifts for the ground state which are very close to those obtained numerically with a more sophisticated model of the system. 相似文献
132.
133.
以金刚石压腔高压装置为工具,用Ⅱ型金刚石作压砧兼红外窗口,对本征态聚苯胺进行了高压(0~8.4 GPa)就位红外光谱测试。结果表明:在4.8~5.2 GPa压力区间,代表醌环振动的吸收峰相对代表苯环振动的吸收峰变小,表明聚苯胺在此压力区间结构上发生了显著变化,且这种变化是不可逆的。聚苯胺的高压(0~14.5 GPa)电阻测量结果表明:当压力小于7.5 GPa时,电阻随压力升高而显著降低,据此认为聚苯胺为电子性导电物质;在7.5 GPa处电阻出现极小值,然后又缓慢升高,至10 GPa后基本不变。推测聚苯胺电阻极小值是由结构变化引起的。至于红外光谱与电阻测量结果反映聚苯胺结构变化的压力值不一致,可能是由于测试条件不同所致。 相似文献
134.
L. A. Sakhnovich 《Functional Analysis and Its Applications》2002,36(3):205-211
The conjecture according to which the mean energy of an equilibrium system in quantum theory exceeds the mean energy of the corresponding classical system is considered. It is rigorously proved that the conjecture holds for the potential well. The estimates for the mean energy of the potential well at high and low temperatures are of special interest. 相似文献
135.
W. Kockelmann M. Hofmann O. Moze S.J. Kennedy K.H.J. Buschow 《The European Physical Journal B - Condensed Matter and Complex Systems》2002,30(1):25-32
The element distributions and the magnetic ordering behaviour of compounds RNi10Si2 (R
=
Tb, Dy, Ho, Er, Tm) have been studied by neutron powder diffraction down to temperatures of 1.6 K. The compounds crystallize
in an ordered variant of the ThMn12 structure type in the tetragonal space group P4/nmm. An ordered 1:1 distribution of Ni and Si on sites 4d and 4e, respectively,
corresponds to a modulation vector [0, 0, 1] with respect to the space group I4/mmm of the ThMn12 structure. TbNi10Si2 orders antiferromagnetically below T
N
= 4.5 K with a magnetic propagation vector of [0, 0, 1/2]. The magnetic Tb moments, 8.97(2) /Tb atom at 1.6 K, are aligned along the c-axis. The Ni sites in TbNi10Si2 do not carry any ordered magnetic moments. The compounds with R
=
Dy, Ho, Er, and Tm are paramagnetic down to 1.6 K and 3.0 K, respectively.
Received 10 July 2002 / Received in final form 12 September 2002 Published online 29 October 2002 相似文献
136.
137.
G. Carelli N. Ioli A. Messina A. Moretti S. Schepis F. Strumia 《International Journal of Infrared and Millimeter Waves》1998,19(9):1191-1199
We measured the dependence of the reflectivity of InSb crystals upon temperature in the submillimeter region using monochromatic radiation from an optically pumped far infrared (FIR) laser. The measures allowed us to determine the value of the electron effective mass at low temperatures with radiations of different frequencies. Our measurements extend the results obtained recently on pure crystals with magneto-optical methods to the low temperatures region where only old measures were available. 相似文献
138.
本文给出了对高功率横流CO_2激光器脉冲预电离过程的理论和实验研究.表明了预电离过程中光电离的重要作用.实验结果表明,脉冲预电离可增大高功率横流CO_2.激光器的pd值(p为放电气压、d为放电间隔),增大放电区注入功率密度.对于提高此类型激光器的放电稳定性和输出激光功率是一种技术简单而有效的手段. 相似文献
139.
140.
Ralf Jäger Anatolij I. Saprykin J. Sabine Becker Hans -Joachim Dietze José A. C. Broekaert 《Mikrochimica acta》1997,125(1-4):41-44
The analytical capabilities of a high-resolution mass spectrometer in combination with a 13.56 MHz glow discharge ion source for the analysis of semiconducting materials (silicon carbide and gallium arsenide) were studied. It was shown that single positively charged ions of sample material have about 10 eV higher average energy than the ions of the discharge and residual gas. Therefore effective energy separation of the ions of analyte from the ions of the discharge and residual gas was achieved by adjusting the ion transfer optics (breadth and position of energy slit), which improves the analytical capabilities of the developed method.Some analytical applications are presented to illustrate the performance of r.f. GDMS for the bulk analysis of semiconducting materials. The results of the trace element analysis of gallium arsenide and silicon carbide samples are compared with data of independent methods (LIMS, ICP-AES, SIMS).Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthdayOn leave from the Institute of Inorganic Chemistry, 630090 Novosibirsk, Russia 相似文献