Two-dimensional function photonic crystals

In this paper, we have studied two-dimensional function photonic crystals, in which the dielectric constants of medium columns are the functions of space coordinates , that can become true easily by electro-optical effect and optical kerr effect. We calculated the band gap structures of TE and TM waves, and found the TE (TM) wave band gaps of function photonic crystals are wider (narrower) than the conventional photonic crystals. For the two-dimensional function photonic crystals, when the dielectric constant functions change, the band gaps numbers, width and position should be changed, and the band gap structures of two-dimensional function photonic crystals can be adjusted flexibly, the needed band gap structures can be designed by the two-dimensional function photonic crystals, and it can be of help to design optical devices.     

Mn-N共掺杂TiO_2电子结构和光学性质的第一性原理计算

本文采用第一性原理研究了Mn、N掺杂TiO_2和Mn-N共掺杂TiO_2的能带结构、态密度和Mn-N共掺TiO_2对体系介电函数与吸收谱的影响.研究结果表明,Mn掺杂TiO_2的能带结构的禁带内出现的杂质能级是由Mn的3d轨道贡献;N掺杂TiO_2在费米能级处的杂质能级则由O 2p,Ti 3d和N 2p轨道杂化形成;Mn-N共掺的TiO_2能带在费米能级处的杂质能级则由O 2p,Ti和Mn的3d以及N 2p轨道杂化形成;对于介电函数,在低能区间(2.5 e V),理想TiO_2无介电峰,Mn-N共掺体系则出现了两个介电峰,原因在于Mn 3d态和N 2p态使介电峰值向低能区移动;同时,与理想TiO_2的吸收谱相比,最大的变化是在可见光区出现了一个吸收峰,且在可见光区的响应的范围变宽.     

深海内波非线性薛定谔方程的研究

考虑以跃层为界的两层分层流体,在弱非线性条件下,从分层流体的动力学基本方程组出发,应用多重尺度方法推导出描述深海内波的非线性薛定谔方程,分析方程中频散和非线性系数,求出非线性薛定谔方程的孤子解,并通过数值实验验证了理论的正确性.     

Einstein relation in n-i-p-i and microstructures of nonlinear optical, optoelectronic and related materials: Simplified theory, relative comparison and suggestions for an experimental determination

We investigate the Einstein relation for the diffusivity-mobility ratio (DMR) for n-i-p-i and the microstructures of nonlinear optical compounds on the basis of a newly formulated electron dispersion law. The corresponding results for III-V, ternary and quaternary materials form a special case of our generalized analysis. The respective DMRs for II-VI, IV-VI and stressed materials have been studied. It has been found that taking CdGeAs₂, Cd₃As₂, InAs, InSb, Hg_1−xCd_xTe, In_1−xGa_xAs_yP_1−y lattices matched to InP, CdS, PbTe, PbSnTe and Pb_1−xSn_xSe and stressed InSb as examples that the DMR increases with increasing electron concentration in various manners with different numerical magnitudes which reflect the different signatures of the n-i-p-i systems and the corresponding microstructures. We have suggested an experimental method of determining the DMR in this case and the present simplified analysis is in agreement with the suggested relationship. In addition, our results find three applications in the field of quantum effect devices.     

Ab initio study of [001] GaN nanowires

We present the results of a study of structural, electronic, and optical properties of the unpassivated and H-passivated GaN nanowires having diameters in the range of 3.29 to 18.33 Å grown along [001] direction by employing the first-principles pseudopotential method within density functional theory in the local density approximation. Two types of nanowires having hexagonal and triangular cross-sections have been investigated. The binding energy increases with the diameter of the nanowire because of a decrease in the relative number of the unsaturated surface bonds. The binding energies of the triangular cross-sectional nanowires are somewhat smaller than those of the hexagonal cross-sectional nanowires in accordance with the Wulff’s rule except the smallest diameter triangular cross-sectional nanowire, where the binding energy is comparable with the corresponding hexagonal cross-sectional nanowires. The band gap varies rapidly with the diameter of the nanowire in the case of the smaller diameter nanowires, and quite slowly for the larger diameter nanowires. After atomic relaxation, appreciable distortion occurs in the nanowires, where the chains of Ga- and N-atoms are curved in different directions. These distortions are reduced with the diameters of the nanowires. The optical absorption in the GaN nanowires is quite strong in the ultra-violet region but an appreciable absorption is also present in the visible region for the larger diameter nanowires. The present results indicate the possibility of engineering the properties of nanowires by manipulating their diameter and surface structure. The presently predicted smaller diameter GaN nanowire possessing the triangular cross-section should be observable in the experiments.     

Magnetic pole pinning at rectangular defects on MnAs/GaAs(0 0 1)

Strong magnetic poles at characteristic rectangular defects have been observed using a magnetic force microscope on a MnAs(  1 0 0) thin film with the thickness of 30 nm. The MnAs thin film was epitaxially grown on a GaAs(0 0 1) substrate. The magnetic poles were in one-arranging direction, being independent of the magnetization direction of the film. The poles were pinned at the edges of the rectangular defects until just below the Curie temperature, and formed a stable magnetic-field loop on the MnAs surface. The stability of the magnetic pole pinning shows the distinctive feature of the magnetic domain structure on the surface with a strong anisotropy, which was built in the heterostructure of MnAs and GaAs.     

有限口径非周期亚波长衍射聚焦偏转器的严格矢量优化

有限口径非周期亚波长衍射光学器件的亚波长结构特性使得传统标量衍射理论失效,必须借助严格电磁理论进行器件的设计。提出一种循环平面波谱算法(IterativePlaneWaveSpectrumAlgorithm,IPWSA)作为器件优化算法,利用二维时域有限差分方法作为严格电磁计算模式,根据Farn方法对器件面型进行亚波长处理,设计出有限口径非周期具有亚波长结构的衍射聚焦偏转器件,偏转角为24.8°,该器件可与激光器集成构成微型集成光学系统,也可以用在红外量子阱系统中。详细分析了算法原理,设计实例验证了算法的优化效果。     

(AlB2)m (m=1~6) 团簇的几何结构和电子性质

采用密度泛函理论(DFT)中的B3LYP方法得到了(AlB2)m团簇的平衡几何结构. 计算并分析了基态掺杂团簇的平均结合能、电离势、能隙和前线分子轨道. 结果表明：掺杂团簇(AlB2)m (m=1~6)整体上具有较高化学活性,(AlB2)5团簇具有金属特征. Al原子总是向团簇外围扩散并且以配位数较少的方式与主团簇结合,团簇表现出以AlB2分子为基元生长的迹象. B-Al键长大于B-B键长. 电荷总是从Al原子转移到B原子. (AlB2)m团簇中B原子的2p轨道在成键中起主要作用,并使(AlB2)m团簇趋于形成离域π键.     

Quantization of Alternative Hamiltonians

We investigate quantum mechanical implications of canonically inequivalent Hamilton formulations of the Newtonian dynamics. Generated alternative quantizations, being noncanonical, are consistent with the same equations of motion, i.e., they satisfy E.Wigner's principle of quantization. As illustration we consider a noncanonical one-dimensional harmonic oscillator.