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二维范德瓦尔斯材料(可简称二维材料)已发展成为备受瞩目的材料大家族,而由其衍生的二维范德瓦尔斯异质结构的集成、性能及应用是现今凝聚态物理和材料科学领域的研究热点之一.二维范德瓦尔斯异质结构为探索丰富多彩的物理效应和新奇的物理现象,以及构建新型的自旋电子学器件提供了灵活而广阔的平台.本文从二维材料的转移技术着手,介绍二维范德瓦尔斯异质结构的构筑、性能及应用.首先,依据湿法转移和干法转移的分类,详细介绍二维范德瓦尔斯异质结构的制备技术,内容包括转移技术的通用设备、常用转移方法的具体操作步骤、三维操纵二维材料的方法、异质界面清洁.随后介绍二维范德瓦尔斯异质结构的性能和应用,重点介绍二维磁性范德瓦尔斯异质结构,并列举在二维范德瓦尔斯磁隧道结和摩尔超晶格领域的应用.因此,二维材料转移技术的发展和优化将进一步助力二维范德瓦尔斯异质结构在基础科学研究和实际应用上取得突破性的成果. 相似文献
154.
Yu-Chun Liu 《中国物理 B》2022,31(8):87803-087803
Different MoS2/Au heterostructures can play an important role in tuning the photoluminescence (PL) and optoelectrical properties of monolayer MoS2. Previous studies of PL of MoS2/Au heterostructures were mainly limited to the PL enhancement by using different Au nanostructures and PL quenching of monolayer MoS2 on flat Au surfaces. Here, we demonstrate the enhanced excitonic PL emissions of monolayer MoS2/Au heterostructures on Si/SiO2 substrates. By transferring the continuous monolayer MoS2 onto a stepped Au structure consisting of 60-nm and 100-nm Au films, the MoS2/Au-60 and MoS2/Au-100 heterostructures exhibit enhanced PL emissions, each with a blue-shifted PL peak in comparison with the MoS2/SiO2. Furthermore, the PL intensity of MoS2/Au-60 is about twice larger than that of MoS2/Au-100. The different enhanced excitonic PL emissions in MoS2/Au heterostructures can be attributed to the different charge transfer effects modified by the stepped Au structure. This work may provide an insight into the excitonic PL and charge transfer effect of MoS2 on Au film and yield novel phenomena in MoS2/Au heterostructures for further study of PL tuning and optoelectrical properties. 相似文献
155.
Growth and characterization of GaAs/In_χGa_(1-χ)As/GaAs axialnanowire heterostructures with symmetrical heterointerfaces 下载免费PDF全文
We report on the Au-assisted vapour-liquid-solid(VLS) growth of GaAs/InxGa1-xAs/GaAs(0.2 ≤ x ≤ 1) axial double-heterostructure nanowires on GaAs(111) B substrates via the metal-organic chemical vapor deposition(MOCVD) technique.The influence of the indium(In) content in an Au particle on the morphology of nanowires is investigated systematically.A short period of pre-introduced In precursor before the growth of InxGa1-xAs segment,coupled with a group III precursor interruption,is conducive to obtaining symmetrical heterointerfaces as well as the desired In/Ga ratio in the InxGa1-xAs section.The nanowire morphology,such as kinking and tapering,are thought to be related to the In composition in the catalyst alloy as well as the VLS growth mechanism. 相似文献
156.
Grace D. Metcalfe Asako Hirai Erin C. Young James S. Speck Hongen Shen Michael Wraback 《固体物理学:研究快报》2013,7(11):993-996
We employ near‐bandgap terahertz emission spectroscopy to study lateral heterostructures resulting from basal plane stacking faults in m ‐plane GaN. The predominant stacking faults have I1 character and behave as an array of spontaneously forming layers comprised of a single cubic stacking sequence within the wurtzite matrix that terminate the spontaneous polarization along the in‐plane c‐axis, leading to strong lateral electric fields. Spectral tuning of femtosecond excitation pulses enables observation of the transition from carrier transport in the continuum to formation of instantaneous dipoles and nonlinear susceptibility associated with both the quantum‐well‐like regions of the cubic layers and polarization‐induced triangular‐like potentials. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
157.
异质镜像光子晶体的光子带隙研究 总被引:1,自引:0,他引:1
对异质镜像结构光子晶体(ABCCBA)N进行了研究。首先,利用一维介电体系中处理光传播的方法--传输矩阵法,详细推导了异质镜像光子晶体透射率的计算公式;然后,采用Matlab软件编程仿真并分析了光子带隙形成与镜像周期数目、光子带隙数目与光子晶体薄层厚度、光子带隙位置与入射角大小等的关系。结果表明:光子带隙的形成及变化主要受光子晶体薄层厚度及入射角大小变化的影响。通过改变影响光子晶体光子带隙的参数,可得到不同频段的光子带隙,用来制作高质量反射镜、滤波器和发光二极管等。 相似文献
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A novel type of exciton–phonon bound state—interlayer polaron—in a double-layer 2D semiconductor with transition metal dichalcogenides as an example, is predicted. In these systems, the interaction of the interlayer exciton with the soft modes of out-of-plane lattice vibrations caused by van der Waals forces and flexural rigidity gives rise to a bound quasiparticle. The energy and effective mass of the formed polaron for weak and strong exciton–phonon coupling regimes are calculated and analyzed. Possible manifestations of these effects in transport- and spectroscopy-related experiments are discussed. 相似文献
160.
Unraveling the Beneficial Microstructure Evolution in Pyrite for Boosted Lithium Storage Performance
Jie Wang Jinwen Qin Yan Jiang Baoguang Mao Xin Wang Minhua Cao 《Chemistry (Weinheim an der Bergstrasse, Germany)》2020,26(51):11841-11850
Pyrite FeS2 as a high-capacity electrode material for lithium-ion batteries (LIBs) is hindered by its unstable cycling performance owing to the large volume change and irreversible phase segregation from coarsening of Fe. Here, the beneficial microstructure evolution in MoS2-modified FeS2 is unraveled during the cycling process; the microstructure evolution is responsible for its significantly boosted lithium storage performance, making it suitable for use as an anode for LIBs. Specifically, the FeS2/MoS2 displays a long cycle life with a capacity retention of 116 % after 600 cycles at 0.5 A g−1, which is the best among the reported FeS2-based materials so far. A series of electrochemical tests and structural characterizations substantially revealed that the introduced MoS2 in FeS2 experiences an irreversible electrochemical reaction and thus the in situ formed metallic Mo could act as the conductive buffer layer to accelerate the dynamics of Li+ diffusion and electron transport. More importantly, it can guarantee the highly reversible conversion in lithiated FeS2 by preventing Fe coarsening. This work provides a fundamental understanding and an effective strategy towards the microstructure evolution for boosting lithium storage performances for other metal sulfide-based materials. 相似文献