固态源分子束外延法生长InGaP/GaAs异质结构的热力学分析

本文建立了采用分子束外延法制备InGaP/GaAs异质结构的热力学模型,其中考虑了两个重要的因素,由晶格失配引起的内在应力和InP的脱附.所得到的模型与现有实验结果匹配较好.该模型的实验结果表明在InGaP的生长过程中,生长温度,In/Ga束流比及合金组分之间的相互关系,同时也与实验数据相吻合.该模型对于其他气相沉积生长方式也具有一定的适用性.     

Growth and modification of thin a-Si:H/a-Ge:H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processing

A combination of ArF-Excimer laser assisted techniques has been used for depositing and modifying ultra thin amorphous Si/Ge bi-layer structures. The first step consisted in producing, at low substrate temperatures, thin bi-layer coatings through Laser induced Chemical Vapour Deposition (LCVD) in both, large areas as well as in small regions of Si(1 0 0) wafers. In the second step, these bi-layer structures have been modified through Pulsed Laser Induced Epitaxy (PLIE) for obtaining heteroepitaxial SiGe alloys with a thin buried Ge rich layer, while keeping a shallow upper Si rich surface with good crystalline quality. Threshold for epitaxial alloy formation has been determined by Raman spectroscopy and estimated to be above 200 mJ/cm². Optical profilometry has been used for evaluating the thickness of the structures and the lateral dimensions of patterned features. SEM, TOF-SIMS and XPS have been used to corroborate the results. For testing IC compatibility, some samples have been overgrown with epitaxial Si and etched through conventional IC processing techniques, revealing that the laser processed layers are suitable to be used as sacrificial layers for producing Micro-Electro-Mechanical Systems (MEMSs) or Silicon-on-Nothing (SON) devices.     

InGaAsP/InP Heterostructure Doped by Cobalt

The preparation of a new type of InGaAsP/InP heterostructures for light emitting diodes is presented. The active region of the heterostructure contains thin layers of nondoped InGaAsP (λ=1.3μ) alternating with barrier layers of InGaAsP (λ=1.1μ) doped by cobalt. Properties of prepared heterostructures were tested on edge emitting diodes with the stripe geometry. Curves of the minority carrier lifetime and the optical power versus current are compared with those obtained on classical bulk InGaAsP/InP double heterostructure. It is shown that the new structure is very eligible for construction of high‐ speed noncoherent 1.3μ diodes operating at low pumping current.     

AlxGa1-xN/GaN异质结构中Al组分对二维电子气性质的影响

通过用数值计算方法自洽求解薛定谔方程和泊松方程，研究了Al组分对Al_xGa1-xN/GaN异质结构二维电子气性质的影响，给出了Al_xGa_{1-x< /sub>N/GaN异质结构二维电子气分布和面密度，导带能带偏移以及子带中电子分布随AlxGa 1-xN势垒层中Al组分的变化关系，并用AlxGa1-xN/GaN 异质结构自发极化与压电极化机理和能 关键词： x}Ga_1-xN/GaN异质结构')" href="#">Al_xGa_1-xN/GaN异质结构 二维电子气 自发极化 压电极化     

The photonic analogue of the graded heterostructure: Analysis using the envelope approximation

We develop and deploy an envelope function formalism in order to study graded photonic crystals – periodic photonic media whose features vary continuously with position. We use the method to reduce the properties of the uniform crystals to the spectral position of their band edges and an effective mass-like term. These are employed within the Schrödinger-like equation derived herein to determine the behaviour of light inside a specific graded photonic crystal created using depth-dependent infiltration of an artificial opal.     

Hybrid stable-chaotic states in coupled quantum well stadia

We use tunnel current spectroscopy to investigate the quantum states of two GaAs quantum wells coupled by a low (100 meV) (AlGa)As tunnel barrier. A high tilted magnetic field is used to generate strongly chaotic electron motion in the two wells which act as coupled chaotic ‘stadia'. The effect of the tunnel barrier on the dynamics of the system depends on the magnitude of the applied bias voltage V. For V375 mV, the central potential barrier acts as a perturbation which modifies the trajectories of selected periodic orbits in the quantum well. Scattering off the central barrier also generates new periodic orbits involving multiple collisions on all three barriers. These orbits ‘scar' distinct sets of eigenstates which generate periodic resonant peaks in the current–voltage characteristics of the device. When the device is biased such that the injected electrons just surmount the central barrier, our calculations reveal novel hybrid scarred states with both stable and chaotic characteristics.     

Tunability of optical gain (SWIR region) in type-II In0.70Ga0.30As/GaAs0.40Sb0.60 nano-heterostructure under high pressure

The interest in applying an external pressure on a nano-heterostructure is to attempt to extract more information about the electronic structure through distortion of the electronic structure. This paper reports the tunability of the optical gain under the high pressure effect in M-shaped type-II In_0.70Ga_0.30As/GaAs_0.40Sb_0.60 symmetric lasing nano-heterostructure designed for SWIR generation. In order to simulate the optical gain, the heterostructure has been modeled with the help of six band k.p method. The 6×6 diagonalized k.p Hamiltonian has been solved to evaluate the valence sub-bands (i.e. light and heavy hole energies); and then optical matrix elements and optical gain within TE (Transverse Electric) mode has been calculated. For the injected carrier density of 5×10¹²/cm², the optimized optical gain within TE mode is as high as ~9000/cm at the wavelength of ~1.95 µm, thus providing a very important alternative material system for the generation of SWIR wavelength region. The application of very high pressure (2, 5 and 8 GPa) on the structure along [110] direction shows that the gain as well as lasing wavelength both approach to higher values. Thus, the structure can be tuned externally by the application of high pressure within the SWIR region.     

Convergence of an implicit Voronoi finite volume method for reaction–diffusion problems

We investigate the convergence of an implicit Voronoi finite volume method for reaction–diffusion problems including nonlinear diffusion in two space dimensions. The model allows to handle heterogeneous materials and uses the chemical activities of the involved species as primary variables. The numerical scheme works with boundary conforming Delaunay meshes and preserves positivity and the dissipative property of the continuous system. Starting from a result on the global stability of the scheme (uniform, mesh‐independent global upper, and lower bounds), we prove strong convergence of the chemical activities and their gradients to a weak solution of the continuous problem. To illustrate the preservation of qualitative properties by the numerical scheme, we present a long‐term simulation of the Michaelis–Menten–Henri system. Especially, we investigate the decay properties of the relative free energy over several magnitudes of time, and obtain experimental orders of convergence for this quantity. © 2015 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 32: 141–174, 2016     

Mechanisms of morphological evolution on faceted core–shell nanowire surfaces

Core-shell nanowires with radial heterostructures hold great promise in photonic and electronic applications and controlling the formation of these heterostructures in the core-shell configuration remains a challenge. Recently, GaAs nanowires have been used as substrates to create AlGaAs shells. The deposition of the AlGaAs layer leads to the spontaneous formation of Al-rich stripes along certain crystallographic directions and quantum dots/wires near the apexes of the shell. A general two-dimensional model has been developed for the motion of the faceted solid-vapor interfaces for pure materials that accounts for capillarity and deposition. With this model, the growth processes and morphological evolution of shells of nanowires around hexagonal cores (six small facets {112} in the corners of six equivalent facets {110}) are investigated in detail both analytically and numerically. It is found that deposition can yield facets that are not present on the Wulff shape. These small facets can have slowly time-varying sizes that can lead to stripe structures and quantum dots/wires depending on the balances between diffusion and deposition. The effects of deposition rates and polarity (or asymmetry) on planes {112} on the development of the configurations of nanowires are discussed. The numerical results are compared with experimental results giving almost quantitative agreement, despite the fact that only pure materials are treated herein whereas the experiments deal with alloys.     

GaN-based heterostructures: electric--static equilibrium and boundary conditions

In the GaN-based heterostructures, this paper reports that the strong electric fields induced by polarization effects at the structure boundaries complicate the electric--static equilibrium and the boundary conditions. The basic requirements of electric--static equilibrium for the heterostructure systems are discussed first, and it is deduced that in the application of the coupled Schr\"{o}dinger--Poisson model to the heterostructures of electric--static equilibrium state, zero external electric field guarantees the overall electric neutrality, and there is no need to introduce the charge balance equation. Then the relation between the screening of the polar charges in GaN-based heterostructures and the possible boundary conditions of the Poisson equation is analysed, it is shown that the various boundary conditions are equivalent to each other, and the surface charge, which can be used in studying the screening of the polar charges, can be precisely solved even if only the conduction band energy is correctly known at the surface. Finally, through the calculations on an AlGaN/GaN heterostructure with typical structure parameters by the coupled Schr\"{o}dinger--Poisson model under the various boundary conditions, the correctness of the above analyses are validated.