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51.
52.
The reststrahlen region of SiC is analysed with the goal of establishing the origin of different shapes of this band, by varying the dielectric parameters involved when simulating the reststrahlen region as obtained by infrared reflectance. 相似文献
53.
lINTRODUCTIONSiCkilnfllrniturepossessesgoodhigh-temperaturepropertiesandsmoothness.Itishighlyresistanttowarddeforming,slaggingandthermalshock.Thefurniturecanpracticallyresultinimprovingqualityandproductionofceramicsandiswidelyusedovertheworld.However,SiChassinteringtemperatureofupto2OOO:Ct13landitisdifficulttosinterasproductbyusingcommonkilnfurnace.Toserveashigh-temperaturerefractorykilnfurniture,itmustbemixedwithabonder.Thisworkus-esfinesiliconpowderasabonder,whichisadustproducedfroms… 相似文献
54.
Shuang-Shuang Kong Wei-Kai Liu Xiao-Xia Yu Ya-Lin Li Liu-Zhu Yang Yun Ma Xiao-Yong Fang 《Frontiers of Physics》2023,18(4):43302
Silicon carbide nanosheets (SiCNSs) have a very broad application prospect in the field of new two-dimensional (2D) materials. In this paper, the interlayer interaction mechanism of bilayer SiCNSs (BL-SiCNSs) and its effect on optical properties are studied by first principles. Taking the charge and dipole moment of the layers as parameters, an interlayer coupling model is constructed which is more convenient to control the photoelectric properties. The results show that the stronger the interlayer coupling, the smaller the band gap of BL-SiCNSs. The interlayer coupling also changes the number of absorption peaks and causes the red or blue shift of absorption peaks. The strong interlayer coupling can produce obvious dispersion and regulate the optical transmission properties. The larger the interlayer distance, the smaller the permittivity in the vertical direction. However, the permittivity of the parallel direction is negative in the range of 150-300 nm, showing obvious metallicity. It is expected that the results will provide a meaningful theoretical basis for further study of SiCNSs optoelectronic devices. 相似文献
55.
根据电镜断面考察结果,以Gurson模型为本构方程的有限单元
法对包体模型及三维非均匀模型进行了详细分析. 为了评价应力-应变
关系及损伤的主要因素,考虑了基体中SiC粒子的体积率和径比的非均
匀分布. 其结果表明,用这种非均匀模型能很好地仿真铝基体在大量塑
性变形之后所发生的韧窝破坏过程. SiC粒子体积率、径比及其位置的
非均匀性,对局部和整体损伤过程与应力-应变关系的影响相当大. 当
Sic粒子径比为1.0,并在基体中均匀分布时,断裂应变会大幅度增大. 相似文献
56.
采用快速热退火(rapid thermal annealing, RTA)法和脉冲激光辐照退火(laser spark annealing, LSA)法, 在n型4H-SiC的Si面制备出Ni电极欧姆接触. 经传输线法测得RTA样品与LSA样品的比接触电阻分别为5.2×10-4 Ω·cm2, 1.8× 10-4 Ω·cm2. 使用扫描电子显微镜、原子力显微镜、透射电子显微镜、拉曼光谱等表征手段, 比较了两种退火方式对电极表面形貌、电极/衬底截面形貌和元素成分分布、SiC衬底近表层碳团簇微结构的影响. 结果表明, 相比于RTA, LSA法制备出的欧姆接触在电极表面形貌、界面形貌、电极层组分均匀性等方面都具有明显优势, 有望使LSA成为一种非常有潜力的制备欧姆接触的退火处理方法. 相似文献
57.
Osamu Ohtaka Naoyuki Ohnishi Katsuyuki Kubo Hiroshi Arima Hiroshi Fukui Takamitsu Yamanaka 《高压研究》2013,33(1):11-15
Using a hot isostatic pressing (HIP) technique, we synthesized diamond/SiC composites from diamond and Si powders. At an HIP condition of 1450 °C and 100 MPa, a pressure much lower than that of the diamond stability field, diamond powders react with molten Si to form well-sintered diamond/SiC composites. Cubes of the composites with 15 mm edge length were thereby fabricated, and an application to the second stage anvils in a Kawai-type high-pressure apparatus was attempted. A hybrid anvils system using four cubes of the composites and four of the conventional WC was introduced and heating experiments up to 1600 °C became possible. Because the diamond/SiC composites are transparent to X-rays, the present system is applicable not only to diffraction studies but also to radiographic studies that need a larger window for an X-ray image. 相似文献
58.
SiC1-xGex/SiC 异质结光电二极管特性的研究 总被引:5,自引:5,他引:0
使用二维器件模拟软件Medici, 对SiC1-xGex/SiC异质结的光电特性进行了模拟.设计了N型重掺杂SiC层的厚度为1 μm, P型轻掺杂SiC1-xGex层厚为0.4 μm, 二者之间形成突变异质结.在反向偏压3 V、光强度为 0.23 W/cm2的条件下, p-n+ SiC0.8Ge0.2/SiC和p-n+ SiC0.7Ge0.3/SiC敏感波长λ分别可以达到0.64 μm和0.7 μm, 光电流分别为7.765×10-7 A/μm和7.438×10-7 A/μm; 为了进一步提高SiC1-xGex/SiC 异质结的光电流, 我们把p-n+两层结构改进为p-i-n三层结构.在同样的偏压、光照条件下, p-i-n SiC0.8Ge0.2/SiC和p-i-n SiC0.7Ge0.3/SiC的光电流分别达到1.6734×10-6 A/μm和1.844×10-6 A/μm. 相似文献
59.
Both the electrical and optical properties are studied of the GaN:Si films with carrier concentrations ranging from 10^17cm^-3 to 10^19cm^-3.rhe results indicate that the increase in slope of carrier concentration starts to slow down when the flow rate of SiH4 is larger than 6.38μmol/min, which is attributed to the amphoteric character of Si. At the same time, the photoluminescence results show that the FWHM of UV is widened,which can be interpreted quantitatively with a semi-classic model. Furthermore, the intensity ratio between the yellow and the UV luminescences reduces monotonically with Si dopants increasing. 相似文献
60.
在对SiC1-xGex三元合金主要特性的研究基础上,利用器件仿真器MEDICI模拟和分析SiCGe/SiC异质结光电二极管的光电特性。计算表明, SiC1-xGex 在Ge组分为0.3时与3C-SiC晶格失配较小,此时的SiCGe/SiC异质结对可见光和近红外光有较好的光谱响应。当P型SiC1-xGex层杂质浓度为1×1015cm-3、厚度1.6μm、x=0.3时,SiC1-xGex /SiC异质结光电二极管对0.52μm可见光有250mA/W左右的响应度,对0.7μm近红外光也有102mA/W左右的响应度。 相似文献