Ag/Cu(111)与Au/Cu(111)体系异质外延岛演化过程中的应变释放及其对Moiré结构形成的影响

采用嵌入原子方法的原子间相互作用势，利用分子动力学模拟方法研究了Au/Cu(111)和Ag/Cu (111)体系的异质外延结构特征以及外延岛形貌和应变释放的演化过程. 通过对比Au/Cu(111)和Ag/Cu (111)体系的异质外延结构及外延岛演化行为，揭示了导致Ag/Cu (111)体系中异质外延层形成Moiré结构的微观物理机理及其与外延体系的宏观物理特性之间的关系. 研究结果显示，外延岛原子与基体表面原子之间的界面结合强度是形成Moiré结构的重要因素，异质外延体系的界面结合强度取决于二者的合金熔解热. 当异质外延体系的合金熔解热为正值时，界面结合强度较弱，有利于Moiré结构的形成. 同时，外延岛原子之间的相互作用决定着外延岛的面内弛豫行为，对Moiré结构的形成有一定的影响. 外延岛的面内弛豫行为与外延层和基体之间的相对刚度有关，弹性模量较大的外延层具有较强的延展能力，对Moiré结构的形成有利. 此外，Moiré结构的形成与外延岛的尺度有关，主要是外延岛边界原子的钉扎作用对外延岛内原子弛豫行为的约束作用的影响.     

Preparation and characterizations of amorphous nanostructured SiC thin films by low energy pulsed laser deposition

Amorphous silicon carbide (SiC) thin films were deposited on silicon substrates by pulsed laser ablation at room temperature. Thicknesses and surface morphology of the thin films were characterized using optical profilers, atomic force and field emission scanning electron microscopy. Nanohardnes, modulus and scratch resistance properties were determined using XP nanoindenter. The results show that crack free, smooth and nanostructured thin films can be deposited using low laser energy densities.     

Delaminated zeolite‐catalysed synthesis of high‐molecular weight polycarbosilane as a low shrinkage SiC precursor

A polycarbosilane (PCS) with a higher number–average molecular weight (2710 vs. 1570), and hence with a higher ceramic yield (74 vs. 68%), compared to a commercial Nipusi type S PCS has been synthesized via the catalytic decomposition of polydimethylsilane at 400 °C using H‐ITQ‐2, a delaminated zeolite with a very high external surface area, as a solid acid. The silicon carbide film fabricated using this PCS was found to show a much lower level (16 vs. 39%) of shrinkage than the commercial PCS‐derived film, together with better mechanical properties, suggesting the potential of its preceramic polymer to produce robust ceramic coatings. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 46: 725–732, 2008     

纳米SiC蓝光发射的研究

在４．６８ｅＶ的激光激发下，室温ＣＶＤ合成的纳米ＳｉＣ粉体，可发射４７５ｎｍ的蓝光，经６００～１１００℃在Ｎ２气氛下进行快速退火（ＲＴＡ）处理，其荧光强度随退火温度升高而增强，当Ｔ≥９００℃时，荧光强度下降，但发光峰位与退火温度无关．通过ＸＲＤ、ＩＲ、ＴＥＭ、ＸＰＳ等研究，认为纳米ＳｉＣ中与氧有关的缺陷可能是引起４７５ｎｍ蓝光发射的主要原因     

Impact of O_2 post oxidation annealing on the reliability of SiC/SiO_2 MOS capacitors

The effects of dry O_2 post oxidation annealing(POA) at different temperatures on SiC/SiO_2 stacks are comparatively studied in this paper. The results show interface trap density(Dit) of SiC/SiO_2 stacks, leakage current density(Jg), and time-dependent dielectric breakdown(TDDB) characteristics of the oxide, are affected by POA temperature and are closely correlated. Specifically, Dit, Jg, and inverse median lifetime of TDDB have the same trend against POA temperature, which is instructive for SiC/SiO_2 interface quality improvement. Moreover, area dependence of TDDB characteristics for gate oxide on SiC shows different electrode areas lead to same slope of TDDB Weibull curves.     

Optical spectroscopy study of damage evolution in 6H-SiC by H_2~+ implantation

Lattice defects induced by ion implantation into Si C have been widely investigated in the decades by various techniques. One of the non-destructive techniques suitable to study the lattice defects in Si C is the optical characterization. In this work, confocal Raman scattering spectroscopy and photoluminescence spectrum have been used to study the effects of 134-ke V H_2~+ implantation and thermal treatment in the microstructure of 6 H-Si C single crystal. The radiation-induced changes in the microstructure were assessed by integrating Raman-scattering peaks intensity and considering the asymmetry of Raman-scattering peaks. The integrated intensities of Raman scattering spectroscopy and photoluminescence spectrum decrease with increasing the fluence. The recovery of the optical intensities depends on the combination of the implantation temperature and the annealing temperature with the thermal treatment from 700℃ to 1100℃. The different characterizations of Raman scattering spectroscopy and photoluminescence spectrum are compared and discussed in this study.     

Eight MeV per charge state from 300 ps laser ion acceleration by using micrometric foils

Proton acceleration using high-intensity laser pulses, at 10¹⁶ W/cm² was studied irradiating different types of thin metal and plastic targets having 1-micron thickness. The maximization of the proton energy process was investigated optimizing the laser parameters, the irradiation conditions and the target properties. Employing 600–700 J laser pulse energy, a focalization inducing self-focusing effects and using targets with optimized thickness, it was possible to accelerate protons up to energies of above 8 MeV. The time-of-flight diagnostics has allowed to monitor the plasma properties and to control the ion acceleration process.     

面向单晶SiC原子级表面制造的等离子体辅助抛光技术

目前Si基半导体由于其自身材料特性的限制,已经越来越难以满足高速发展的现代电力电子技术对半导体器件的性能要求.SiC作为新一代半导体材料具有显著的性能优势,但由于其属于典型的难加工材料,实现SiC晶圆的高质量与高效率加工成为了推动其产业化应用进程的关键.本综述在回顾近年来SiC超精密加工技术研究进展的基础上,重点介绍了一种基于等离子体氧化改性的SiC高效超精密抛光技术,分析了该技术的材料去除机理、典型装置、改性过程及抛光效果.分析结果表明,该技术具有较高的去除效率,能够获得原子级平坦表面,并且不会产生亚表面损伤.同时针对表面改性辅助抛光技术加工SiC表面过程中出现的台阶现象,探讨了该台阶结构的产生机理及调控策略.最后对等离子体辅助抛光技术的发展与挑战进行了展望.     

Selective area laser deposition of FCC beta silicon carbide

Silicon Carbide (SiC) has been deposited onto an alumina substrate by the thermal decomposition of the gaseous precursor tetramethylsilane (TMS). A 500 W ytterbium fibre laser was used to heat the surface of an alumina substrate locally, resulting in deposition of SiC at the sample surface. The SiC deposit was analysed using energy dispersive X‐ray spectroscopy and X‐ray diffraction (XRD). The deposit was confirmed to be silicon carbide and found to be face centre cubic (FCC) crystal structure. Raman spectroscopy was used to measure the stoichiometry of the deposit which initially was found to be carbon rich. Further analysis by Raman spectroscopy suggests the deposit may be more stoichiometric following a two hour thermal treatment of the sample at 600 degrees celcius in an atmosphere of air.     

Tilt investigation of In(Al,Ga)As metamorphic buffer layers on GaAs (001) substrate: A novel technique for tilt determination

Crystallographic tilt and Surface topography of InGaAs and InAlAs based metamorphic buffer structures on GaAs (001) substrate grown by molecular beam epitaxy (MBE) under varying growth conditions have been investigated. Compressively strained metamorphic buffer layers show anisotropic strain relaxation. A novel tilt determination technique based on X‐ray diffraction has been developed which can separate the effect of anisotropic strain. Tilt has been found to depend on compositional grading scheme, growth temperature and surface irregularities. Samples having random surfaces show smaller tilt than that of samples showing regular cross‐hatch. At higher growth temperature, reduction of tilt has been observed and correlated with thermal activation of otherwise inactive slip systems at low temperature. At low temperature and also for continuously graded samples, reduction of tilt has been observed and correlated with the slower relaxation that provide the opportunity for all the slip systems to participate and compete.