Influence of Si doping on the optical and structural properties of InGaN films

Influence of Si doping on the optical and structural properties of InGaN epilayers with different Si concentrations was investigated in detail by means of high-resolution X-ray diffraction (HRXRD), scanning electron microscope (SEM), Cathodoluminescence (CL) and photoluminescence (PL). It was found that a small amount of Si doping in InGaN could enhance luminescence intensity, improve the crystal quality of InGaN and suppress the formation of V-defects in InGaN. Further investigation by CL showed that V-defects act as nonradiative center, which lower the luminescence efficiency of InGaN. Based on above-mentioned results, one possible mechanism of influence of Si doping on the formation of V-defects in InGaN was also proposed in this paper.     

Solution-processible Cd-doped ZnO nanoparticles as an electron transport layer to achieve high performance polymer solar cells through improve conductivity and light transmittance

Abstract

In this work, electron transport layers (ETLs) with high charge transfer ability were prepared by doping ZnO nanoparticles with different concentrations of cadmium(Cd). The inverted polymer solar cell based on PTB7-Th: PC₇₁BM as active layer and various concentrations Cd-doped ZnO (CZO) as ETLs were fabricated. The PCE of the device with optimized Cd content in the ZnO film was about 14.7% larger than that of the pure ZnO-based cells. The cadmium-doped ZnO(CZO) is a good candidate to be used as a high-quality transparent electrode in solar cell applications.     

Polymerization kinetics of photocurable acrylic resins

The polymerization kinetics of photocurable compositions based on an epoxyacrylate oligomer and three analogous diacrylate monomers were investigated. The effects of the oligomer-to-monomer ratio, curing conditions, and monomer structure were considered. The polymerization is characterized by a synergistic effect observed in a wide temperature range and occurring for the polymerization rate both in air and Ar and for final conversions in air. The final conversion in Ar is determined by viscosity of a formulation. The presence of a heteroatom (S or O) in the ester group of the reactive diluent is beneficial for the polymerization course, especially in air atmosphere. The best results were obtained for the sulfur-containing monomer. © 1998 John Wiley & Sons, Inc. J Polym Sci A: Polym Chem 36: 665–673, 1998     

Degradation of poly(N-vinylcarbazole) by annealing under iodine pressure

After room temperature doping of poly(N-vinylcarbazole) by iodine, the powders are annealed at different temperatures (370, 470, and 570 K) for 24 h under vacuum or under iodine pressure. The obtained powders were studied by infrared absorption, x-ray photoelectron spectroscopy, x-ray diffraction, and nuclear magnetic resonance. Annealing of pure PVK powder increases the crystallization quality of the sample. Annealing with iodine induces progressive polymer degradation. At 570 K under iodine pressure the PVK is totally destroyed. The aromatic rings and the C(SINGLEBOND)N bonds have disappeared. NH₄I crystallites have formed, embeded in a degraded, cross-linked polymer matrix. © 1996 John Wiley & Sons, Inc.     

Free-standing nitrogen doped graphene/Co(OH)_2 composite films with superior catalytic activity for aprotic lithium-oxygen batteries

The recent boom in large-scale energy storage system promotes the development of lithium-oxygen batteries because of their high theo retical energy density.However,their applications are still limited by the sluggish kinetic,insoluble discharge product deposition and the undesired parasitic reaction.Herein,the free-standing nitrogen doped reduced graphene oxide/Co(OH)_2(NRGO/Co(OH)_2) composite films were prepared by a facile hydrothermal method,The NRGO/Co(OH)_2 composite films display interconnected three-dimensional conductive network,which can not only promote the diffusion of O_2 and the transport of electrolyte ions,but also provide abundant storage space for discharge products.Moreover,the introduction of nitrogen-containing functional groups results in improved conductivity and electron adsorption ability,which can facilitate electron transport and enhance the surface catalytic activity.Combining with excellent catalytic performance,the lithium-oxygen batteries with NRGO/Co(OH)_2 composite film cathodes deliver low charge overpotential and excellent cycling performance.     

Doping Limits and Growth Thermodynamics of GaSb Crystals

Beside four approaches to the thermodynamics of GaSb-M(=S, Te) solid solutions the doping limits for extremely narrow concentration regions are analysed and ranked in the Cu, Ge, Mn (p-dopants), S, Se, Te (n-dopants) and N, In (isoelectric) groups. This revised version was published online in August 2006 with corrections to the Cover Date.     

P掺杂6H-SiC的第一性原理研究

采用基于密度泛函理论的第一性原理赝势平面波法,计算未掺杂与P替换Si、C以及P间隙掺杂6H-SiC的电子结构与光学性质。结果显示未掺杂的6H-SiC是带隙为2.052 eV的间接带隙半导体,P替换Si、C掺杂以及P间隙掺杂6H-SiC带隙均减小,分别为1.787 eV、1.446 eV和0.075 eV,其中P间隙掺杂带隙减小幅度最大。P替换掺杂6H-SiC使得费米能级向导带移动并插入导带中,呈n型半导体。P间隙掺杂价带中的一条能级跨入费米能级,因此在禁带中出现一条P 3p杂质能级,P间隙掺杂6H-SiC转为p型半导体。替换与间隙掺杂使得6H-SiC的介电函数实部增大,介电函数虚部、吸收光谱、反射光谱与光电导率红移,其中P间隙掺杂效果最佳。通过P掺杂材料的电导率增强,对红外波段的利用率明显提高,为6H-SiC在红外光电性能方面的应用提供有效的理论依据。     

GeSe基薄膜太阳电池模拟研究

硫化亚锗(GeSe)具有合适的禁带宽度、高的吸收系数和高的载流子迁移率等优异的光电特性,且组分简单、低毒和储量丰富,特别适合作为光伏吸收材料。本文基于新型太阳电池吸收层材料GeSe构筑了结构为金属栅线/AZO/i-ZnO/CdS/GeSe/Mo/玻璃的薄膜太阳电池,分别模拟分析了缓冲层和吸收层的厚度、掺杂浓度,以及吸收层体缺陷密度对器件性能的影响。经过优化CdS缓冲层厚度和掺杂浓度以及GeSe吸收层厚度和掺杂浓度,器件获得高达27.59%的转换效率。这些结果表明GeSe基薄膜太阳电池有成为高效光伏器件的潜力。     

第一性原理研究Hf对ZrCoH3放氢的影响

过渡金属元素Hf被设计成通过占据Co原子、Zr原子和间隙位点来添加到ZrCoH₃中.通过第一性原理计算研究了Hf对ZrCoH₃放氢的影响.发现用Hf掺杂会使ZrCoH₃不稳定,导致氢离解能(E_d)、Co-H平均单位键长的键序(SBO_Co-H)降低,顺序为Zr₁₆Co₁₆H₄₈> Zr₁₆Co₁₆HfH₄₈> Zr₁₆Co₁₅HfH₄₈> Zr₁₅Co₁₆HfH₄₈.理论研究表明在ZrCoH₃-Hf体系中,较弱的Co-H共价键相互作用、金属特性和Hf-H键的形成都有利于提高ZrCoH₃的放氢能力. Hf原子优先占据间隙位,但这对氢离解能影响很小,氢离解能与位置...     

基于择优掺杂取向研究Y掺杂量对ZnTe电子结构和吸收光谱的影响

Zn Te由于其特有的禁带宽度,光学性质以及可重掺杂等特性,使得众多学者对其进行了系列的相关研究,但关于Y掺杂浓度和掺杂方式对Zn Te性质的影响却鲜有报道.作者采用密度泛函理论框架下的广义梯度近似方法,分别计算了Y在掺杂浓度为1.56at%、3.12at%、4.69at%下Zn Te的几何结构、能带结构、态密度分布、吸收光谱等性质,以及不同掺杂方式对体系的影响.结果表明:在掺杂浓度为3.12at%,掺杂方式不相同时,掺杂原子沿[111]晶向排布的形成能最低,即[111]晶向为择优晶向.当掺杂浓度为4.69at%时,择优晶面为(111)面.若要实现更高浓度的Y掺杂,沿(111)晶面掺杂更容易实现.对于实验而言,更高浓度的Y掺杂,掺杂原子在Zn Te体系中更容易沿(111)晶面进行集中排列. Y掺杂Zn Te后,体系的禁带宽度变大,吸收光谱发生蓝移,对可见光的吸收强度减小.在浓度为3.12at%时禁带宽度最大,蓝移现象最明显,吸收强度最小. Y掺杂后体系变为n型半导体,可以使用这种掺杂方式制作P-N结二极管．