毫米波二阶分形频率选择表面寄生谐振的抑制

二阶分形频率选择表面具有良好的双频特性, 是实现准光学选频网络小型化的理想选择. 但是由于其自相似迭代结构的复杂性, 导致其长期受到寄生谐振的影响, 为了提高二阶分形结构在工程应用中的可靠性, 本文建立了二阶方环分形周期单元的等效电路并分析了寄生谐振产生时的场分布情况, 研究了寄生谐振的形成机理; 进而通过单元间去耦合操作, 并引入基于离散粒子群算法的多参数优化过程, 克服了这一问题. 仿真和实验结果表明: 在保证双频工作特性、对于入射角和极化稳定的前提下, 通过去耦合和粒子群算法实现的频率选择表面实测对寄生谐振的抑制可达13dB, 且避免了新的寄生谐振的产生. 关于寄生谐振抑制的研究, 为增强二阶分形阵列结构的可靠性提供了新的思路. 关键词： 二阶分形 频率选择表面 寄生谐振 离散粒子群算法     

Reviews

Abstract

Biological Effects of Radiations Daniel S. Grosch Blaisdell Publishing Co., New York, 1965, 293 pages. $3.50

Ion Bombardment of Solids G. Carter and J. S. Colligon American Elsevier Publishing Company, Inc., New York, 1968, 446 pages. $40.00     

The fundamental features and characteristics of discharge and plasma ion sources

An analysis of some of the fundamental and special physical processes occurring in discharge and plasma ion sources is presented.

The main purpose of the lecture is to present to the users of ion sources some key elements of information, of which not all may be generally recognised and which hopefully will be of value for a better understanding of the operational problems related to the complex behaviour of discharge and plasma ion sources.     

Strain modification of AlGaN layers using swift heavy ions

Epitaxial AlGaN/GaN layers grown by molecular beam epitaxy (MBE) on SiC substrates were irradiated with 150 MeV Ag ions at a fluence of 5×10¹² ions/cm². The samples used in this study are 50 nm Al_0.2Ga_0.8N/1 nm AlN/1 μ m GaN/0.1 μ m AlN grown on SI 4H-SiC. Rutherford backscattering spectrometry/channeling strain measurements were carried out on off-normal axis of irradiated and unirradiated samples. In an as-grown sample, AlGaN layer is partially relaxed with a small tensile strain. After irradiation, this strain increases by 0.22% in AlGaN layer. Incident ion energy dependence of dechanneling parameter shows E ^1/2 dependence, which corresponds to the dislocations. Defect densities were calculated from the E ^1/2 graph. As a result of irradiation, the defect density increased on both GaN and AlGaN layers. The effect of irradiation induced-damages are analyzed as a function of material properties. Observed results from different characterization techniques such as RBS/channeling, high-resolution XRD and AFM are compared and complemented with each other to deduce the information. Possible mechanisms responsible for the observations have been discussed in detail.     

Depth profiling by means of sims: Recent progress and current problems

The present state of the art of secondary ion mass spectrometry (SIMS), applied to the in-depth analysis of impurity concentration profiles, is reviewed critically. It is shown that SIMS has reached a level of perfection which is unparalleled by other analytical techniques. There are, however, several effects which may cause deviations of the measured profile from the original dopant distribution. These detrimental effects are due to interaction of primary ions with the residual gas, adsorption and incorporation of residual gases, sputtering yield variations due to the accumulation of probe atoms in the sample, mass interference between molecular ions and the atomic species under study and, last but not least, beam-induced relocation of dopant atoms (“atomic mixing”). Methods for minimizing the respective disturbing effect are discussed.     

A comparative study of ion-induced damages in C60 and C70 fullerenes

The stability of fullerenes (C₆₀ and C₇₀) under swift heavy ion irradiation is investigated. C₆₀ and C₇₀ thin films were irradiated with 120 MeV Ag ions at fluences from 1×10¹² to 3×10¹³ ions/cm². The damage cross-section and radius of damaged cylindrical zone were found to be higher for C₆₀ than C₇₀ as evaluated by Raman spectroscopy, which shows that the C₇₀ molecule is more stable under energetic ion impact. The higher damage cross-section of the C₆₀ molecule compared with that of the C₇₀ molecule is explained on the basis of thermal conductivity in the framework of the thermal spike model. The surface morphology of pristine C₆₀ and C₇₀ films is studied by atomic force microscopy. UV-visible absorption studies revealed that band gap for C₆₀ and C₇₀ fullerenes thin films decreases with increasing ion fluence. Resistivity of C₆₀ and C₇₀ thin films decreases with increasing ion fluence but the decrease is faster for C₆₀ than C₇₀, indicating higher damage in C₆₀. Irradiation at a fluence of 3×10¹³ ions/cm² results in complete damage of fullerenes (C₆₀ and C₇₀) into amorphous carbon.     

Evaluation of carbon stripper foils produced by a nitrogen ion beam sputtering method

Carbon stripper foils having thicknesses in the range of 5–40 μg/cm² have been prepared by a nitrogen ion beam sputtering method and their lifetimes have been tested in the Van de Graaff accelerator facility with 3.2 MeV, Ne⁺ ions. The foils of 21 μg/cm² thickness had the longest mean lifetime of 1350.0 mC/cm² (irradiation dose of 8.4×10¹⁸ atoms/cm²) which was 50 times longer than that of commercial foils. However, foils with other thicknesses had extremely short lifetimes similar to commercial foils. The nitrogen content of the foils of both long and short lifetimes has been determined using elastic scattering of 3 MeV α-particles.     

Effects of passage of 200 MeV Ag9+ ions in indium phosphide at different depths

Indium phosphide sample was irradiated with 200?MeV Ag⁹⁺ ions for the fluence of 2?×?10¹³?ions?cm^?2. The sample was chemically etched down up to 240?nm depth to investigate the distribution of defects at different regions. Raman scattering and glancing incidence X-ray diffraction spectra were recorded at different depths. The stress estimated from Raman shift was found to increase with depth up to 160?nm and thereafter it decreased and at a depth of 224?nm sample did not show any stress. Phonon coherence length estimated from the Phonon Confinement Model was found to vary between 43 and 18?nm with respect to depth. Glancing incidence X-ray diffraction results revealed the decrease in crystallite size from 16.12 to 1.00?nm in different depth regions.     

Influence of 120 MeV Si9+ ion irradiation on ZnTe semiconductor thin films

ABSTRACT

ZnTe (Zinc Telluride) is a potential semiconducting material for many optoelectronic devices like solar cells and back contact material for CdTe-based solar cells. In the present study, ZnTe thin films were prepared by thermal evaporation technique and then irradiated with 120?MeV Si⁹⁺ ions at different fluences. These films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and UV–Visible spectroscopy techniques. XRD study confirms increased crystallinity and grain growth for post-irradiated ZnTe thin films for fluences, up to 1?×?10¹¹ ions cm^?2. However, the grain size and crystallinity decreased for higher fluence-exposed samples. SEM images confirm the observed structural properties. Modification of the surface morphology of the film due to the ion irradiation with different fluences is studied. Optical band gap of film is decreased from 2.31?eV (pristine) to 2.17?eV after irradiation of Si⁹⁺ ions.     

Design of New Reaction Fields for Spherical Polypyrrole Particle Synthesis

Summary: Polypyrrole conducting polymers have been investigated widely for various applications because of their thermal and environmental stability and good electrical conductivity. Using chemical oxidative polymerization for the synthesis of polypyrrole particles, the reaction rate is very fast. In this study, we designed two new reaction fields for the synthesis of spherical polypyrrole nanoparticles. In the first system, oxidative polymerization of monomer droplets infused in a water/oil (W/O) emulsion reaction field was investigated. The second system employed dispersed monomer in an aqueous solution with a low concentration of oxidant in which polymerization was augmented by ultrasonic irradiation. Effective control of the reaction rate was important for enabling the synthesis of fine spherical polypyrrole particles.