Comparative analysis of the effects of internal lasing oscillation and external light injection on semiconductor optical amplifier performance

One of the key differences of a semiconductor optical amplifier (SOA) with internal lasing oscillation (ILO) from a SOA with external light injection (ELI) lies in a carrier-sharing mechanism. Since the internal lasing mode shares the same pool of carriers with the signals, the carriers (or photons) withdrawn from the circulating laser mode speed up the gain recovery. On the other hand, the external light injected into the SOA shortens the carrier recovery time through optical pumping without any carrier sharing involved. To find out a better scheme, we have made a comparative investigation on the effects of the ILO and ELI on the SOA performance. It turns out by way of simulation that the ELI scheme provides faster gain recovery, shorter carrier lifetime, and higher saturation power when the external injection power is higher than the internal lasing power. The performance enhancement is not so pronounced with the carrier-sharing mechanism, as the internal lasing mode itself gives rise to severe longitudinal spatial hole burning (LSHB). Nevertheless, the ILO scheme is preferable for linear-amplification applications. We also examine the use of the ELI for low-crosstalk optical amplifiers. It is found that the ELI scheme does not bring in a very strong resonance peak in the crosstalk, which appears in a SOA with ILO due to relaxation oscillations of the lasing mode. In comparison to the ILO in SOAs, the ELI into SOAs is likely to leave more optical gain for multi-channel amplification without any sacrifice on the crosstalk.     

Accurate Small-Signal Model Extraction for pHEMT on GaAs

An accurate small-signal modeling approach applied to GaAs-based pHEMT devices is presented. The procedure for extracting equivalent-circuit model parameters is illustrated in detail. A genetic algorithm (GA) program is developed to optimize the model parameters in order to improve the modeling accuracy. The validity of modeling approach is verified by comparing the simulated and measured result of two pHEMTs and a fabricated ka-band power amplifier. The conclusion can be drawn that the proposed modeling method is rather accurate and efficient.     

Studies on Nd:YAG Single-pass Amplifiers for High-power Q-switched Laser System

The output of Nd∶YAG single-pass laser amplifiers is studied analytically and experimentally. Methods of analysis for single-pass Nd∶YAG laser amplifier are presented. A flashlamp-pumped Q-switched Nd∶YAG oscillator/amplifier laser system has been developed with the average output power of 121.5 W.     

Transmission of 10 GHz, 3.5 ps Optical Pulses Over 100-km Standard Fiber Using Mid-span Spectral Inversion

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基于半导体光放大器交叉增益调制(SOA-XGM)波长变换器仿真研究

本文在PTDS(Photonic Transimission Design Suite)软件仿真平台上对基于半导体光放大器交叉增益调制(SOA-XGM)的波长变换器的变换特性作了仿真实验研究,仿真并分析了输入信号光功率、输入探测光功率、偏置电流和SOA的结构参量等因素对变换信号的消光比(ER)、Q值及误码率(BER)的影响关系.研究结果对优化设计SOA-XGM波长变换器有一定的参考价值.     

圆扫描变像管人卫激光测距技术研究

在本文中,我们设计并研制了用于毫米级精度人卫激光测距的圆扫描时间分析系统。研制的圆扫描变像管理论时间分辨率可优于3ps,可用于双色测距;偏转灵敏度高达10cm/kV,偏转空间分辨率优于24lp/mm;利用双MCP内增强,增益～1×10⁶,并有门控功能以进一步提高信噪比和动态范围。扫描控制电路能提供300MHz、10W的正弦信号,其频率、幅度、相位稳定度均可满足要求。调试过程中较好地解决了阻抗变换、空间干扰和相位正交等关键问题。在仅2W的RF功率驱动下,即可实现稳定的φ24mm的圆扫描,系统实测时间分辨率达4.8ps。在实验室实测测距精度达亚毫米级。动态实验及模拟测距表明,该时间分析系统可满足第四代人卫激光测距系统的需要。     

Relationships between extraction efficiency and external parameters of slab amplifier

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运算放大器一种新的分析方法

从入射阻抗ＺＡ和反馈阻抗ＺＢ的概念出发，借助网络的Ｙ参数导出可供计算机编程的电压增益（ＡＶ）的一般表达式，并引入实例进行理论分析．结果表明：这种方法不仅适用于分析单环和多环反馈型运算放大器电路，同时对设计多种新功能的运算放大器电路是十分有效的     

Effects of the sever on two-stage gyro-TWT amplifiers

The effects of the sever on two-stage gyro-TWT amplifiers were characterized by a self-consistent slow time scale model. Utilization of a sever was demonstrated to be capable of inducing additional launching losses as well as ballistic bunching effects. In addition, some electrons could bunch on an electron phase equal to 3π/2 at the beginning of the second stage as a result of a large and sharp change of the wave’s phase if the modulation of the electron beam in the first stage was strong. Calculated results further indicated that the performance was more sensitive to the position of sever than the length of the sever. Asymmetric interaction structures with the first stage being shorter than the second stage demonstrated higher saturated powers and wider bandwidths along with exhibiting more resistance to the velocity spread of the electron beam.     

Er3+,Yb3+共掺磷酸盐玻璃沟道波导放大器

在自行研制的Er3 ，Yb3 共掺磷酸盐玻璃基质上用离子交换方法制作出沟导光波导放大器。在110mW的抽运功率下(抽运光波长为980nm)，在1．8cm长的器件上获得了3．8dB的小信号(信号光波长为1．55μm)增益，单位长度上的增益为2．1dB／cm。