Preparation of Ca(1−x)EuxGa2S4 crystals and their photoluminescence, absorption and excitation spectra

The single crystal of CaGa₂S₄:Eu is expected as a useful laser material with a high quantum efficiency of light emission. However, as far as our knowledge is concerned, the systematic study of the mixed compounds of Ca_(1−x)Eu_xGa₂S₄ as a function of x has not been reported up to now. Here, we have first constructed the phase diagram of the CaGa₂S₄ and EuGa₂S₄ pseudo binary system, and show that it forms the solid solution. Then we have grown single crystals of these compounds. The maximum photoluminescence efficiency is achieved at x=0.25. From the three peak energies observed in the photoluminescence excitation (PLE) and absorption spectra, the 5d excited states are suggested to consist of three levels arising from the multiplets of Eu²⁺ ions.     

Photoluminescence spectra of rare earth doped CaGa2S4 single crystals

Six kind CaGa₂S₄ single crystals doped with different rare earth (RE) elements are grown by the horizontal Bridgman method, and their photoluminescence (PL) spectra are measured in the temperature range from 10 to 300 K. The PL spectra of Ce or Eu doped crystals have broad line shapes due to the phonon assisted 4f-5d transitions. On the other hand, those of Pr³⁺, Tb³⁺, Er³⁺ or Tm³⁺ doped samples show narrow ones owing to the 4f-4f transitions. The assignments of the electronic levels are made in reference to the reported data of RE 4f multiplets observed in same materials.     

光致折射晶体中高速调制光束传输和放大的理论研究

本文首次对高速调制光束在先致折射晶体中的耦合进行了理论研究,指出利用光致折射晶体中的双光束耦合可以实现高速调制光束的信息转换和放大,并为实验所证实.     

Dependence of thermal conductivity on electrical resistivity in Bismuth-Tellurides

The p-type (Bi_0.25Sb_0.75)₂Te₃ doped with 3-12 wt% excess Te alone and n-type Bi₂(Te_0.94Se_0.06)₃ codoped with 0.017-0.026 wt% Te and 0.068-0.102 wt% I were prepared by the Bridgman method, to produce intentionally polycrystalline. Some of the as-grown specimens were annealed, in order to prepare specimens with much different ρ. These polycrystalline specimens have almost the same degree of alignment of the c plane parallel to the freezing direction. The electrical rersistivity ρ and thermal conductivity κ were measured at 298 K along the freezing direction and κ was plotted as a function of ρ. As a result, the lattice components κ_ph obtained by subtracting the electronic component κ_el from the observed κ were found to decrease almost linearly with a decrease of ρ in both p- and n-type specimens, where κ_el was calculated using Wiedemann-Franz law. This tendency is consistent with the conventional result that κ_ph becomes negligible small in metals. The significant decrease in κ_ph with decrease in ρ is considered to be caused predominantly by the phonon scattering due to dopants. The relationship between κ_ph and ρ was first clarified in the intermediate region between the metal and insulator.     

Corkscrew振荡引起的发射度增长

 用解析方法来确定由二种因素引起的Corkscrew振荡所造成的归一发射度增长的表达式。这二种因素是电子束的非理想注入以及聚焦磁场相对于系统轴的随机偏斜。     

Control of island formation using overgrowth technique on cleaved edges of strained multiple quantum wells and selective epitaxy on patterned substrates

Two approaches to control the position and the size of semiconductor islands are proposed. The first method is to perform overgrowth on a cleaved edge of strained multiple quantum wells which acts as a substrate with a periodically modulated lattice constant, thus inducing a periodic strain to the overgrown layer. The second method is to selectively grow islands in specific windows defined by electron beam lithography. Both the methods are applied to the Ge/Si system and the controllability of the Ge island formation is demonstrated.     

Extended‐chain crystals in high‐pressure crystallized poly(ethylene terephthalate)/bisphenol a polycarbonate blends

Morphologies of extended‐chain crystals with different characteristics were observed with scanning electron microscopy (SEM) in the high‐pressure crystallized polyethylene terephthalate/polycarbonate (PET/PC) blends. The crystals memorize their nucleation and growth process, which reveal an involvement of different mechanisms simultaneously. The presence of sliding diffusion during crystal thickening is indicated by a wedge shape of some crystals, while bent crystals suggest the occurrence of transesterification in the formation of the large extended‐chain crystals. The observation of two morphological features on one group of crystals shows that two mechanisms may work simultaneously. The connection between folded‐chain and extended‐chain crystals is demonstrated by the S‐shaped extended‐chain crystals as well as their direct morphological connection observed with SEM. Though transesterification plays the essential role in the formation of the large crystals, which acts in different aspects during the process, the thermodynamic driving force is the enthalpy gain associated with large crystals. This is a high‐pressure self‐assembly with a coupling between crystallization and transesterification, which may be instructive to grow such large crystals in similar polymer systems. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 44: 3148–3156, 2006     

含分层损伤复合材料加筋层合板的分层扩展研究

建立了复合材料加筋结构的后屈曲和分层损伤扩展行为的数值模拟方法．基于Mindlin一阶剪切理论和von-Karman大挠度理论的层合板和层合梁单元，提出了含分层损伤复合材料加筋层合板分层扩展行为的有限元分析方法；利用虚裂纹闭合技术计算分层前缘的总能量释放率，并采用总能量释放率准则分层扩展判据，结合自适应网格移动技术，对在压缩载荷作用下的具有不同加筋形式，不同初始分层面积和形状的加筋板结构分层扩展行为进行了数值模拟研究，在分析中还考虑了加筋刚度、位置和分布，分层形状和大小、边界支撑强弱和分层前缘的接触效应对结构分层扩展行为的影响．本所提出的研究方法对工程界关于复合材料结构的设计具有重要意义．     

Non-monotonous dependence of surface roughness on factors influencing energy of adatoms during thin island film growth

Many experimental results show that surface roughness of thin films can increase, decrease, stay constant or pass through the minimum with the change in substrate temperature, energy of arriving atoms or assisted beam (electrons, photons, ions), depending on material and interval of variation of those parameters. The aim of this paper is to explain and analyze this non-monotonous behavior of surface roughness by proposed kinetic model. The model is based on rate equations and includes processes of surface diffusion of adatoms, nucleation, growth and coalescence of islands in the case of thin films growth in Volmer-Weber mode. It is shown by modeling that non-monotonous dependence of surface roughness on the factors influencing energy of adatoms (e.g. temperature, assisted beam irradiation, accelerating voltage) occurs as a result of interplay between diffusion length of adatoms and size of islands, because both parameters depend on energy of adatoms. Variation of island size and diffusion length results in atomic jumps from islands forming rougher or smoother surface. The functions of surface roughness, island size, island density on diffusion length of adatoms and on other parameters are calculated and analyzed in this work.