A growth kinetics model of rate decomposition for Si1-xGex alloy based on dimer theory

According to the dimer theory on semiconductor surface and chemical vapor deposition(CVD) growth characteristics of Si1-xGex, two mechanisms of rate decomposition and discrete flow density are proposed. Based on these two mechanisms, the Grove theory and Fick’s first law, a CVD growth kinetics model of Si1-xGex alloy is established. In order to make the model more accurate, two growth control mechanisms of vapor transport and surface reaction are taken into account. The paper also considers the influence of the dimer structure on the growth rate. The results show that the model calculated value is consistent with the experimental values at different temperatures.     

A priori bounds and multiplicity for fully nonlinear equations with quadratic growth in the gradient

We consider fully nonlinear uniformly elliptic equations with quadratic growth in the gradient, such as

$?F(x,u,Du,D^{2}u)=\lambda c(x)u+〈M(x)Du,Du〉+h(x)$

in a bounded domain with a Dirichlet boundary condition; here $\lambda \in \mathbb{R}$, $c,h\in L^p(\mathrm{\Omega })$, $p>n\ge 1$, $c?0$ and the matrix M satisfies $0<{\mu }_{1}I\le M\le {\mu }_{2}I$. Recently this problem was studied in the “coercive” case $\lambda c\le 0$, where uniqueness of solutions can be expected; and it was conjectured that the solution set is more complex for noncoercive equations. This conjecture was verified in 2015 by Arcoya, de Coster, Jeanjean and Tanaka for equations in divergence form, by exploiting the integral formulation of the problem. Here we show that similar phenomena occur for general, even fully nonlinear, equations in nondivergence form. We use different techniques based on the maximum principle.We develop a new method to obtain the crucial uniform a priori bounds, which permit to us to use degree theory. This method is based on basic regularity estimates such as half-Harnack inequalities, and on a Vázquez type strong maximum principle for our kind of equations.     

Effect of Li2CO3 addition on the structural,optical, ferroelectric,and electric-field-induced strain of lead-free BNKT-based ceramics

In this work, we reported the effect of Li₂CO₃ addition on the structural, optical, ferroelectric properties and electric-field-induced strain of Bi_0.5(Na,K)_0.5TiO₃ (BNKT) solid solution with CaZrO₃ ceramics. Both rhombohedral and tetragonal structures were distorted after adding Lithium (Li). The band gap values decreased from 2.91 to 2.69 eV for 5 mol% Li-addition. The maximum polarization and remanent polarization decreased from 49.66 μC/cm² to 27.11 μC/cm² and from 22.93 μC/cm² to 5.35 μC/cm² for un-doped and 5 mol% Li- addition BNKT ceramics, respectively. The maximum S_max/E_max value was 567 pm/V at 2 mol% Li₂CO₃ access. We expected this work will help to understand the role of A-site dopant in lead-free ferroelectric BNKT materials.     

Onset of Chiral Adenine Surface Growth

The structure and stability of adenine crystals and thin layers has been studied by using scanning tunneling microscopy, X‐ray diffraction, and density functional theory calculations. We have found that adenine crystals can be grown in two phases that are energetically quasi‐degenerate, the structure of which can be described as a pile‐up of 2D adenine planes. In each plane, the structure can be described as an aggregation of adenine dimers. Under certain conditions, kinetic effects can favor the growth of the less stable phase. These results have been used to understand the growth of adenine thin films on gold under ultra‐high vacuum conditions. We have found that the grown phase corresponds to the α‐phase, which is composed of stacked prochiral planes. In this way, the adenine nanocrystals exhibit a surface that is enantiopure. These results could open new insight into the applications of adenine in biological, medical, and enantioselective or pharmaceutical fields.     

金属-半导体异质结构纳米晶的可控制备和光谱调控

本文简要综述了金属-半导体异质结构纳米晶的设计、可控制备和物性研究的相关工作.设计了异相成核与生长、选择硫化和种子介导液相外延生长3种不同的方法并以此制备了多种金属-半导体异质结构纳米晶,对其中所涉及的反应机制进行了论述,并简要探讨了金属-半导体异质结构纳米晶的热稳定性、表面等离子共振活性、荧光特性以及异质界面的电荷转移和保持能力.     

Grain size effects on microstructural stability and creep behaviour of nanotwinned Ni free-standing foils at room temperature

Creep tests were performed on the high stacking fault energy (SFE) nanotwinned (NT) Ni free-standing foils with nearly the same twin thickness at room temperature (RT) to investigate the effects of grain size and loading rate on their microstructural stability and creep behaviour. The grain growth mediated by the twinning/detwinning mechanism at low applied stresses (<800 MPa) and grain refinement via the detwinning mechanism at high applied stresses (>800 MPa) were uncovered in the present NT-Ni foils during RT creep, both of which are attributed to the interactions between dislocations and boundaries. It appears that a higher initial dislocation density leads to a faster primary creep strain rate and a slower steady-state creep strain rate. Unlike the non-twinned metals in which grain growth often enhances the creep strain rate, the twinning/detwinning-mediated grain growth process unexpectedly lowers the steady-state creep strain rate, whereas the detwinning-mediated grain refinement process accelerates the creep strain rate in the studied NT-Ni foils. A modified phase-mixture model combined with Arrhenius laws is put forward to predict the scaling behaviour between the creep strain rate and the applied stress, which also predicts the transition from grain growth-reduced to grain refinement-enhanced steady-state creep strain rate at a critical applied stress. Our findings not only provide deeper insights into the grain size effect on the mechanical behaviour of nanostructured metals with high SFE, but also benefit the microstructure sensitive design of NT metallic materials.     

Novel microwave plasma‐assisted CVD reactor for diamond delta doping

We report on building a novel chemical vapor deposition (CVD) reactor for diamond delta‐doping. The main features of our reactor are: a) the use of rapid gas switching system, (b) the reactor design providing the laminar gas flow. These features provide the creation of ultra‐sharp interfaces between doped and undoped material and minimize the prolonged ”tails” formation in the doping profile. It is proved by optical emission spectroscopy that gas switching time is not more than 10 seconds. Using the novel reactor we have grown the nanometer‐thin layers of boron doped diamond. The FWHM of boron concentration profile is about 2 nm which is proved by SIMS. It is shown that the both single delta‐layer and multiple delta‐layers could be grown using the novel CVD reactor. In principle, the reactor could be used for diamond delta doping with other dopants, like nitrogen, phosphorus etc. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)