Direct detection of carrier traps in Si solar cells after light‐induced degradation

In solar cells fabricated from boron‐doped Cz‐Si wafers minority and majority carrier traps were detected by deep level transient spectroscopy (DLTS) after so‐called “light‐induced degradation” (LID). The DLTS signals were detected from mesa‐diodes with the full structure of the solar cells preserved. Preliminary results indicate metastable traps with energy levels positioned at E_V + 0.37 eV and E_C – 0.41 eV and apparent carrier capture cross‐sections in the 10^–17–10^–18 cm² range. The concentration of the traps was in the range of 10¹²–10¹³ cm^–3. The traps were eliminated by annealing of the mesa‐diodes at 200 °C. No traps were detected in Ga‐doped solar cells after the LID procedure or below the light protected bus bar locations in B‐doped cells. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Effect of gate engineering in JLSRG MOSFET to suppress SCEs: An analytical study

In this work, an analytical model of gate-engineered junctionless surrounding gate MOSFET (JLSRG) has been proposed to uncover its potential benefit to suppress short-channel effects (SCEs). Analytical modelling of centre potential for gate-engineered JLSRG devices has been developed using parabolic approximation method. From the developed centre potential, the parameters like threshold voltage, surface potential, Electric Field, Drain-induced Barrier Lowering (DIBL) and subthershold swing are determined. A nice agreement between the results obtained from the model and TCAD simulation demonstrates the validity and correctness of the model. A comparative study of the efficacy to suppress SCEs for Dual-Material (DM) and Single-Material (SM) junctionless surrounding gate MOSFET of the same dimensions has also been carried out. Result indicates that TM-JLSRG devices offer a noticeable enhancement in the efficacy to suppress SCEs by as compared to SM-JLSRG and DM-JLSRG device structures. The effect of different length ratios of three channel regions related to three different gate materials of TM-JLSRG structure on the SCEs have also been discussed. As a result, we demonstrate that TM-JLSRG device can be considered as a competitive contender to the deep-submicron mainstream MOSFETs for low-power VLSI applications.     

Potentiostatic and galvanostatic electrodeposition of manganese oxide for supercapacitor application: A comparison study

The structural and electrochemical properties of manganese oxide (MnO₂) electrodeposited by potentiostatic and galvanostatic conditions are studied. X‒ray diffraction analyses confirm identical MnO₂ phase (ramsdellite) are deposited under potentiostatic and galvanostatic conditions. Under comparable current density during electrodeposition, MnO₂ deposited by galvanostatic condition shows smaller crystallite size, less compact layered structure, higher surface area and wider band gap, in comparison to the potentiostatic deposition. The MnO₂ morphology difference under different electrodeposition conditions contributes to different capacitive behaviors. The lower compactness of MnO₂ deposited galvanostatically renders facile ions diffusion, leading to higher specific capacitance with low equivalent series resistance. The findings suggest galvanostatic electrodeposition is suitable to produce MnO₂ nanostructure for supercapacitor application.     

Investigation of laterally single-diffused metal oxide semiconductor (LSMOS) field effect transistor

We propose a distinct approach to implement a laterally single diffused metal-oxide-semiconductor (LSMOS) FET with only one impurity doped p-n junction. In the LSMOS, a single p-n junction is first created using lateral dopant diffusion. The channel is formed in the p region of the p-n junction and the n region acts as the drift region. Two distinct metals of different work function are used to form the “n⁺” source/drain regions and “p⁺” body contact using the charge plasma concept. We demonstrate that the LSMOS is similar in performance to a laterally double diffused metal-oxide-semiconductor (LDMOS) although it has only one impurity doped p-n junction. The LSMOS exhibits a breakdown voltage of ∼50.0 V, an average ON-resistance of 48.7 mΩ-mm² and a peak transconductance of 53.6 μS/μm similar to that of a comparable LDMOS.     

Dielectric properties of tetragonal tungsten bronze films deposited by RF magnetron sputtering

Tetragonal tungsten bronze (TTB) films have been synthesised on Pt(111)/TiO₂/SiO₂/Si substrates from Ba₂LnFeNb₄O₁₅ ceramics (Ln = La, Nd, Eu) by RF magnetron sputtering. X-ray diffraction measurements evidenced the multi-oriented nature of films with some degrees of preferential orientation along (111). The dependence of the dielectric properties on temperature and frequency has been investigated. The dielectric properties of the films are similar to those of the bulk, i.e., ε ∼150 and σ ∼10⁻⁶ Ω⁻¹ cm⁻¹ at 1 MHz and room temperature. The films exhibit two dielectric anomalies which are attributed to Maxwell Wagner polarization mechanism and relaxor behaviour. Both anomalies are sensitive to post-annealing under oxygen atmosphere and their activation energies are similar E_a ∼0.30 eV. They are explained in terms of electrically heterogeneous contributions in the films.     

An Unusual Triphenylphosphine Oxide Catalyzed Stereoselective 1,3‐Dichlorination of Unsaturated Ketoesters

An unusual Ph₃PO‐catalyzed stereoselective 1,3‐dicholorination of an unsaturated ketoester has been developed. The novel activation mode involved in this cascade reaction can promote consecutively elusive transformations. The products were obtained with good yields and excellent stereoselectivities. This reaction makes important complementation to the limitations associated with the field of dichlorination.     

ZnAl2O4 SiO2纳米复合催化剂用于无溶剂条件下乙酸酐与醇、酚和胺的乙酰化反应简

A ZnAl₂O₄@SiO₂ nanocomposite was prepared from metal nitrates and tetraethyl orthosilicate by the sol-gel process, and characterized by X-ray diffraction, Fourier transform infrared, transmission electron microscopy, and N₂ adsorption-desorption measurements. The nanocomposite was tested as a heterogeneous catalyst for the acetylation of alcohols, phenols, and amines under solvent-free conditions. Under optimized conditions, efficient acetylation of these substrates with acetic anhydride over the ZnAl₂O₄@SiO₂ nanocomposite was obtained. Acetylation of anilines and primary aliphatic amines proceeded rapidly at room temperature, while the reaction time was longer for the acetylation of alcohols and phenols, showing that an amine NH₂ group can be selectively acetylated in the presence of alcoholic or phenolic OH groups. The catalyst can be reused without obvious loss of catalytic activity. The catalytic activity of the ZnAl₂O₄@SiO₂ nanocomposite was higher than that of pure ZnAl₂O₄. The method gives high yields, and is clean, cost effective, compatible with substrates having other functional groups and it is suitable for practical organic synthesis.     

高效可回收多相催化剂SiO_2-Cu_2O催化伯胺和仲胺苄基化反应(英文)

A mild,effective,and selective procedure is reported for the mono N-benzylation and N,N-dibenzylation of primary amines as well as mono N-benzylation of secondary amines using silicasupported copper(I) oxide in water.The silica-supported Cu2O was generated in situ by the reaction of Fehling solution and glucose at 100 °C onto activated silica.The catalyst was filtered,washed with water,and oven-dried,and was characterized by Fourier transform infrared spectroscopy,thermogravimetric analysis,scanning electron microscopy,transmission electron microscopy,and atomic absorption spectroscopy.The prepared Cu2O-SiO2 was found to be thermally stable up to 325 °C.The copper was uniformly distributed onto the surface of the silica,and the mean particle diameter was 7 nm.The catalyst served as a selective heterogenous catalyst for the N-benzylation of primary and secondary amines.The catalyst is recyclable and was used effectively upto fifth run without a significant loss of catalytic activity.Various reaction solvents including water,acetonitrile,and toluene were screened for N-benzylation of amines,and the success of the aqueous system highlights the low environmental impact of the procedure.     

Why Boron Nitride is such a Selective Catalyst for the Oxidative Dehydrogenation of Propane

Boron‐containing materials, and in particular boron nitride, have recently been identified as highly selective catalysts for the oxidative dehydrogenation of alkanes such as propane. To date, no mechanism exists that can explain both the unprecedented selectivity, the observed surface oxyfunctionalization, and the peculiar kinetic features of this reaction. We combine catalytic activity measurements with quantum chemical calculations to put forward a bold new hypothesis. We argue that the remarkable product distribution can be rationalized by a combination of surface‐mediated formation of radicals over metastable sites, and their sequential propagation in the gas phase. Based on known radical propagation steps, we quantitatively describe the oxygen pressure‐dependent relative formation of the main product propylene and by‐product ethylene. Free radical intermediates most likely differentiate this catalytic system from less selective vanadium‐based catalysts.     

Enzyme-free and DNA-based universal platform for the construction of various logic devices based on graphene oxide and G-quadruplex

In the fields of biocomputing and biomolecular, DNA molecules are applicable to be regarded as data of logical computing platform that uses elaborate logic gates to perform a variety of tasks. Graphene oxide (GO) is a type of novel nanomaterial, which brings new research focus to materials science and biosensors due to its special selectivity and excellent quenching ability. G-quadruplex as a unique DNA structure stimulates the intelligent application of DNA assembly on the strength of its exceptional binding activity. In this paper, we report a universal logic device assisted with GO and G-quadruplex under an enzyme-free condition. Integrated with the quenching ability of GO to the TAMRA (fluorophore, Carboxytetramethylrhodamine) and the enhancement of fluorescence intensity produced by the peculiar binding of G-quadruplex to the NMM (N-methylmesoporphyrin IX), a series of basic binary logic gates (AND. OR. INHIBIT. XOR) have been designed and verified through biological experiments. Given the modularity and programmability of this strategy, two advanced logic gates (half adder and half subtractor) were realized on the basis of the same work platform. The fluorescence signals generated from different input combinations possessed satisfactory results, which provided proof of feasibility. We believe that the proposed universal logical platform that operates at the nanoscale is expected to be utilized for future applications in molecular computing as well as disease diagnosis.