A quantum circuit design of AES requiring fewer quantum qubits and gate operations

Advanced Encryption Standard (AES) is one of the most widely used block ciphers nowadays, and has been established as an encryption standard in 2001. Here we design AES-128 and the sample-AES (S-AES) quantum circuits for deciphering. In the quantum circuit of AES-128, we perform an affine transformation for the SubBytes part to solve the problem that the initial state of the output qubits in SubBytes is not the |0>^⊗8 state. After that, we are able to encode the new round sub-key on the qubits encoding the previous round sub-key, and this improvement reduces the number of qubits used by 224 compared with Langenberg et al.’s implementation. For S-AES, a complete quantum circuit is presented with only 48 qubits, which is already within the reach of existing noisy intermediate-scale quantum computers.     

Transfer of quantum entangled states between superconducting qubits and microwave field qubits

Transferring entangled states between matter qubits and microwave-field (or optical-field) qubits is of fundamental interest in quantum mechanics and necessary in hybrid quantum information processing and quantum communication. We here propose a way for transferring entangled states between superconducting qubits (matter qubits) and microwave-field qubits. This proposal is realized by a system consisting of multiple superconducting qutrits and microwave cavities. Here, „qutrit” refers to a three-level quantum system with the two lowest levels encoding a qubit while the third level acting as an auxiliary state. In contrast, the microwave-field qubits are encoded with coherent states of microwave cavities. Because the third energy level of each qutrit is not populated during the operation, decoherence from the higher energy levels is greatly suppressed. The entangled states can be deterministically transferred because measurement on the states is not needed. The operation time is independent of the number of superconducting qubits or microwave-field qubits. In addition, the architecture of the circuit system is quite simple because only a coupler qutrit and an auxiliary cavity are required. As an example, our numerical simulations show that high-fidelity transfer of entangled states from two superconducting qubits to two microwave-field qubits is feasible with present circuit QED technology. This proposal is quite general and can be extended to transfer entangled states between other matter qubits (e.g., atoms, quantum dots, and NV centers) and microwave- or optical-field qubits encoded with coherent states.     

基于重叠栅工艺的硅量子点阵列的制备与调控

利用半导体量子点阵列结构实现近邻耦合是规模化扩展自旋量子比特的主要方案之一.随着量子点数目的增加,量子点阵列器件的制作工艺及参数调控均愈加复杂.本文介绍了一种重叠栅工艺结构,利用多层相互重叠且具有不同功能的栅极定义量子点,制作出结构紧凑、调控性好的量子点阵列器件,解决了工艺扩展的难题.此外,本文发展了一套高效可靠的调控方法,按顺序逐个添加量子点并建立虚拟电极,实现了对量子点参数的独立控制,并且能够高效且独立地调控各量子点中的电子数目,克服了大规模量子点阵列中电压参数配置的困难.这些方法为未来实现大规模自旋比特阵列提供了一种标准化的方案.     

掺氢与激励电路对钡蒸气激光输出特性的影响

对用Blumlein电路放电激励的钡蒸气激光在掺氢和不掺氢时的输出特性进行了实验研究.结果表明，用掺氢1.5%的氖气作缓冲气体能使激光功率增加近2倍.在此基础上，进一步比较了相互作用电路与Blumlein电路时钡蒸气激光的输出特性，发现相互作用电路能显著提高钡蒸气激光的输出功率和效率，获得了3W最大功率和0.4%效率的1.5μm波长激光输出.测量并分析了各工作参量与激光功率之间的关系，定性解释了掺氢与相互作用电路的作用机理 . 关键词： Blumlein电路 相互作用电路 掺氢 钡蒸气激光     

Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor

In this study, GaAs metal–oxide–semiconductor (MOS) capacitors using Y‐incorporated TaON as gate dielectric have been investigated. Experimental results show that the sample with a Y/(Y + Ta) atomic ratio of 27.6% exhibits the best device characteristics: high k value (22.9), low interfacestate density (9.0 × 10¹¹ cm^–2 eV^–1), small flatband voltage (1.05 V), small frequency dispersion and low gate leakage current (1.3 × 10^–5A/cm² at V_fb + 1 V). These merits should be attributed to the complementary properties of Y₂O₃ and Ta₂O₅:Y can effectively passivate the large amount of oxygen vacancies in Ta₂O₅, while the positively‐charged oxygen vacancies in Ta₂O₅ are capable of neutralizing the effects of the negative oxide charges in Y₂O₃. This work demonstrates that an appropriate doping of Y content in TaON gate dielectric can effectively improve the electrical performance for GaAs MOS devices.

Capacitance–voltage characteristic of the GaAs MOS capacitor with TaYON gate dielectric (Y content = 27.6%) proposed in this work with the cross sectional structure and dielectric surface morphology as insets.     

混沌信号发生器

本给出一种用普通的电阻、电容和运算放大器实现的非自治混沌信号发生器电路。适用于进行混沌理论的演示实验教学。     

Hopf Bifurcation Control of a Hyperchaotic Circuit System

This paper is concerned with the Hopf bifurcation control of a new hyperchaotic circuit system. The stability of the hyperchaotie circuit system depends on a selected control parameter is studied, and the critical value of the system parameter at which Hopf bifurcation occurs is investigated. Theoretical analysis give the stability of the Hopf bifurcation. In particular, washout filter aided feedback controllers are designed for delaying the bifurcation point and ensuring the stability of the bifurcated limit cycles. An important feature of the control laws is that they do not result in any change in the set of equilibria. Computer simulation results are presented to confirm the analytical predictions.     

新型AGC电路在光纤水听器中的稳幅作用

在相位载波(Phase Generated Carrier,PGC)解调的基础上,分析了新型自动增益控制(Auto Gain Control,AGC)电路与PGC解调相结合的信号处理方式,并进行了MATLAB仿真.理论推导和MATLAB仿真的结果说明新型AGC电路在光纤水听器中能起到稳定输出信号幅度的作用.     

用数字毫伏表测量RLC串联电路相频特性

在论述RLC串联谐振电路和并联谐振电路原理的基础上,提出用数字毫伏表测量RLC串联谐振电路相频特性曲线的方法,并将测量结果与传统示波器测量方法比较,分析误差产生的原因是由于电感器交流内阻的影响所致。     

锥形剖面径向复合超声换能器的机电等效电路

研究了一种锥形剖面径向复合超声换能器。该换能器由一个等截面内金属圆环、一个轴向极化的压电陶瓷圆环和一个锥形剖面外金属圆环沿径向复合而成,且换能器的径向尺寸远大于高度。锥形剖面外金属圆环满足关系式h=h₀r,h₀为厚度变化常数。基于平面应力径向振动理论,推导了换能器的机电等效电路,得到了共振频率方程和反共振频率方程,进而研究了换能器的振动特性。并将理论计算的第1阶、第2阶径向共振频率和反共振频率与数值仿真结果相比较,二者结果一致。研究表明:锥形剖面换能器第1阶、第2阶径向共振频率、反共振频率、有效机电耦合系数不仅与换能器各部分的材料、径向几何尺寸有关,还与h₀有关。h₀越大,第1阶径向共振频率、反共振频率越大,有效机电耦合系数先增大后减小。与等截面相比,锥形剖面换能器沿径向向外辐射声波,辐射面积更大,辐射声功率更高,指向性更好。