256色模式下图形图像处理系统中对不规则区域的处理

概述了图形图像处理系统中关于不规则区域的基本算法，包括：区域填充，边界跟踪，边界标志，几何处理，区域分割等等．并且，根据２５６色模式的特殊性，对传统的算法做了有针对性的改进，加快了处理速度，使其更适合于电影电视字幕、动画卡通人物等不规则图形图像区域．同时还给出了改进算法的程序设计的技巧．     

太阳能电池基本特性测定实验 --一个与能源利用有关的综合设计性实验

“太阳能电池基本特性测定”是与能源利用有关的新的综合性设计实验．本文简述了该实验的原理、实验方法及测量结果,得出了太阳能电池基本参数短路电流Iac,开路电压Uoc与太阳能电池接收到的相对光强度J／Jn的近似函数关系。     

碳纳米颗粒的放射性99mTc标记

探索了影响氯化亚锡还原法制备碳纳米管和不同粒径纳米碳黑的99mTc标记化合物的多种因素, 在给定实验条件下, 99mTc的标记率能够稳定达到90％以上。 细胞培养液中标记物的放射化学纯度在2.5 h中保持在(86±4)%范围内。 制备的标记化合物满足碳纳米颗粒细胞摄取率测定和细胞毒性机制研究的实验要求。 实验结果提示, 99mTc标记过程是基于还原得到的低价Tc在碳纳米颗粒表面上的物理吸附机理。 The effects of experimental conditions on preparation of 99mTc labeled carbon nanotubes and nanocarbon blacks by SnCl2 were investigated. At given conditions the labeling yields were over 90%. In a culture medium, the radiochemical purity of the labeling compounds kept (86±4)% within 2.5 h. The 99mTc labeled multi walled carbon nanotubes (MWNTs) and nanocarbon blackes (NCBs) obtained in this work met satisfactory experimental demands for study of cellular uptake and toxicity. The experiments showed that the labeling process was based on physical adsorption of low valent technetium resulted from reduction reaction on the surface of the carbon nanomaterials.     

碳纳米管的变温场发射

考察了温度变化对沉积在钨丝针尖上的碳纳米管场发射的影响，发现碳纳米管场发射电流随温度升高而增大，场发射电流的稳定性基本没有变化. 多根碳纳米管的场发射特性随温度变化出现偏离Fowler-Nordheim理论的现象，这种现象可能来自碳纳米管的不均匀性.     

碳纳米管束中的正电子理论

采用中性原子叠加模型和有限差分方法(SNA-FD)计算了大范围内不同管径的单壁碳纳米管束中的正电子情况，发现对于单壁碳纳米管束，正电子的主要湮没区域，湮没对象和正电子寿命随碳纳米管管径的不同而发生规律性变化.计算得到管径范围在0.8—1.6nm的碳纳米管束的正电子寿命范围为332—470ps，与实验测得的394ps符合较好.     

氮化硼纳米管阵列储氢的计算机模拟

采用巨正则蒙特卡罗方法模拟常温、中等压强下单壁氮化硼纳米管阵列的物理吸附储氢,重点研究压强、纳米管阵列的管径和管间距对单壁氮化硼纳米管阵列物理吸附储氢的影响.计算结果表明,氮化硼纳米管阵列的储氢性能明显优于碳纳米管阵列,在常温和中等压强下的物理吸附储氢量(质量百分数)可以达到和超过美国能源部提出的商业标准.并给出相应的理论解释.     

碳纳米管吸附铜原子的密度泛函理论研究

采用密度泛函方法对铜原子在有限长（5,5）椅型单壁碳纳米管的吸附行为进行了研究.计算结果表明,铜原子吸附在管外壁要比吸附在管内壁能量上更为有利,在管外壁碳原子顶位吸附最佳,属于明显的化学吸附.且用前线轨道理论对其成键特性进行了分析,表明在顶位吸附时主要由铜原子的4s轨道电子与碳纳米管中耦合的σ-π键形成新的σ键.此外还对比计算了两种典型位置电子密度,发现顶位吸附的成键中有更大的电子云重叠.进一步表明在某些情况下铜碳原子可以成键. 关键词： 碳纳米管 铜原子 成键特性     

界面羟基对碳纳米管摩擦行为和能量耗散的影响

本文采用分子动力学模拟研究了羟基对碳纳米管摩擦和能量耗散方式的影响.研究结果表明:由于界面间氢键的形成,碳纳米管所受的平均摩擦力明显增大;随着羟基比例的改变,界面间氢键的数量与摩擦力的变化趋势一致;碳纳米管的手性角对摩擦力有一定的影响,扶手椅型碳纳米管所受的摩擦力比其他类型的碳纳米管的大;直径对摩擦力的影响较大,直径越大界面间的摩擦力越大,其原因是大直径的碳纳米管底部变平导致界面接触面积增大;界面接枝羟基后,体系的声子态密度中出现羟基的振动峰;随羟基比例的增加,羟基的振动在能量耗散中起到更为重要的作用,当碳纳米管和硅基底的羟基比例为10%/20%时,体系能量耗散的主要途径由碳纳米管和硅基底的振动转变为羟基的振动.     

Investigating the effect of interphase and surrounding resin on carbon nanotube free vibration behavior

The free vibration analysis of a carbon nanotube (CNT) embedded in a volume element is performed using 3D finite element (FE) and analytical models. Three approaches consist of molecular and continuum mechanics FE methods and continuum analytical method are employed to simulate the CNT, interphase region and surrounding matrix. The bonding between CNT and polymer is treated as non-perfect bonding using van der Waals and triple phase material interaction in first and second approaches. In analytical approach a perfect bonding is assumed between nanotube and matrix. First, natural frequencies of CNT under different boundary conditions and aspect ratios are obtained by three approaches and the results are compared with published data. The results show the frequency response variations of CNT in GHz to THz range. Subsequently, vibration behaviors of CNT/polymer are evaluated and the results revealed the importance of interphase region role in the performance of nanocomposites. The results also showed the convergence of the natural frequencies for 1–2.5% of CNT volume in high aspect ratios using three methods, so that the interphase effects is negligible. In addition, it is observed that the molecular method due to interphase role has proper performance in vibration behavior investigation of volume elements.     

Effect of boron and nitrogen co-doping on CNT's electrical properties: Density functional theory

In this work, we have theoretically studied the changes in electrical properties of three different geometrical structures of carbon nanotubes upon co-doping them with boron and nitrogen atoms. We applied different doping mechanisms to study band structure variations in the doped structures. Doping carbon nanotubes with different atoms will create new band levels in the band structure and as a consequence, a shift in the Fermi level occurs. Whereas, filling up the lowest conduction/ upper valence bands created an up/ downshift in the Fermi level. Moreover, dopants concentration and dopants position play a critical rule in defining the number of new band levels. These new band levels in the band gap region represented as new peaks appeared in the density of states. These new bands are solely attributed to co-doping carbon nanotubes with boron and nitrogen atoms.