Memory switching of germanium tellurium amorphous semiconductor

The dc conductivity and switching properties of amorphous GeTe thin film of thickness 262 nm are investigated in the temperature range 303-373 K. The activation energy ΔE_σ, the room temperature electrical conductivity σ_RT and the pre-exponential factor σ₀ were measured and validated for the tested sample. The conduction activation energy ΔE_σ is calculated. The I-V characteristic curves of the thin film samples showing a memory switching at the turnover point (TOP) from high resistance state (OFF state) to the negative differential resistance state (NDRS) (ON state). It is found that the mean values of the threshold electrical field E_th decreased exponentially with increasing temperatures in the investigated range. The switching activation energy ΔE_th is calculated. Measurements of the dissipated threshold power P_th and the threshold resistance R_th were carried out at TOP point at different temperatures of the samples. The activation energies ΔE_R and ΔE_P caused by resistance and power respectively are deduced. The results obtained support thermal model for initiating switching process in this system.     

Thermal conductivity, dislocation density and GaN device design

The performance of high power transistor devices is intimately connected to the substrate thermal conductivity. In this study, the relationship between thermal conductivity and dislocation density is examined using the 3 omega technique and free standing HVPE GaN substrates. Dislocation density is measured using imaging cathodoluminescence. In a low dislocation density regime below 10⁵ cm⁻², the thermal conductivity appears to plateau out near 230 W/K m and can be altered by the presence of isotopic defects and point defects. For high dislocation densities the thermal conductivity is severely degraded due to phonon scattering from dislocations. These results are applied to the design of homoepitaxially and heteroepitaxially grown HEMT devices and the efficiency of heat extraction and the influence of lateral heat spreading on device performance are compared.     

频率受随机过程调制的体系中的光谱扩散

通过在Bloch方程中增加描述对频率微扰的随机过程项{ω(t)},我们讨论了系统在窄谱带的光激发后的光谱扩散。特别是以下两种情况:1)如果ω以相同的概率变化为系综中的任一ω’,光谱是一个指数式衰减的定域峰和指数式增长的动态非均匀背底的叠加。2)如果ω'到ω的概率仅与|ω’-ω|有关,非定域峰随时间变宽。作为一个例子,我们讨论了频率受多个独立随机电报过程调制的系统中的光谱扩散。     

Average speaking fundamental frequency in soprano singers with and without symptoms of vocal attrition

Nineteen trained soprano singers aged 18–30 years vocalized tasks designed to assess average speaking fundamental frequency (SFF) during spontaneous speaking and reading. Vocal range and perceptual characteristics while singing with low intensity and high frequency were also assessed, and subjects completed a survey of vocal habits/symptoms. Recorded signals were digitized prior to being analyzed for SFF using the Kay Computerized Speech Lab program. Subjects were assigned to a normal voice or impaired voice group based on ratings of perceptual tasks and survey results. Data analysis showed group differences in mean SFF, no differences in vocal range, higher mean SFF values for reading than speaking, and 58% ability to perceive speaking in low pitch. The role of speaking in too low pitch as causal for vocal symptoms and need for voice classification differentiation in vocal performance studies are discussed.     

Interval parameter perturbation method for evaluating the bounds on natural frequencies of structures with interval parameters

For structural parameters with uncertainties, interval mathematics can, in the case where the probabilistic distribution density of uncertain variables is unavailable, deal with the influence of uncertainties in structural parameters on the response of structures. In order to evaluate the region containing natural frequencies of structures with interval parameters, the interval parameter perturbation method is presented in this paper. The advantage of the present method is its computational efficiency in evaluating the region containing natural frequencies. A numerical example is used to illustrate the efficiency of the method proposed. The project is supported by National Youth Natural Science Foundation of China and National Outstanding Youth Science Foundation of China.     

Markovian network processes: Congestion-dependent routing and processing

A Markovian network process describes the movement of discrete units among a set of nodes that process the units. There is considerable knowledge of such networks, often called queueing networks, in which the nodes operate independently and the routes of the units are independent. The focus of this study, in contrast, is on networks with dependent nodes and routings. Examples of dependencies are parallel processing across several nodes, blocking of transitions because of capacity constraints on nodes, alternate routing of units to avoid congestion, and accelerating or decelerating the processing rate at a node depending on downstream congestion. We introduce a general network process representing the numbers of units at the nodes and derive its equilibrium distribution. This distribution takes the form of a product of functions of vectors in which the arguments of the functions satisfy an interchangeability property. This new type of distribution may apply to other multi-variate processes as well. A basic idea in our approach is a linking of certain micro-level balance properties of the network routing to the processing rates at the nodes. The link is via routing-balance partitions of nodes that are inherent in any network. A byproduct of this approach is a general characterization of blocking of transitions without the restriction that the process is reversible, which had been a standard assumption. We also give necessary and sufficient conditions under which a unit moving in the network sees a time average for the unmoved units (called the MUSTA property). Finally, we discuss when certain flows between nodes in an open network are Poisson processes.This research was sponsored in part by Air Force Office of Scientific Research contract 84-0367.     

On the reliability of unsaturated hydraulic conductivity calculated from the moisture retention curve

In comparison with direct measurements of unsaturated hydraulic conductivity, the methods of calculations from the moisture retention curve are attractive for their fast and simple use and low cost. These are the main reasons for their increasing use, mainly in spatial variability studies. On the other hand, it is known that their applicability is limited. The possibility of the use of the retention curve to indirectly determine hydraulic conductivities is analyzed as follows. The theoretical derivation of the relationK(h) – (h) is briefly discussed with regards to potential sources of inaccuracy. The sensitivity of the algorithm forK(h) calculation is studied as a response to possible inaccuracies in the retention curve determination. Conclusions about the usability of calculated hydraulic conductivities are drawn.     

The Büttiker-Landauer model generalized

Büttiker and Landauer studied scattering off an oscillating rectangular barrier in order to shed light on the time aspects of tunneling. The expression for the traversal time resulting from this study is controversial. In addition, doubts have recently been expressed on technical aspects of their work. In an attempt to clarify these issues, we investigate a generalization of their model to arbitrary oscillating barriers,V(x, t)=V ₀(x)+V ₁(x)cos t. In the process, we confirm that Büttiker and Landauer's work is technically sound. However, we show, by several examples, that no direct general relation exists between the characteristic frequency of an oscillating barrier and the duration of the tunneling process. For a wide range of realistic parameters this characteristic frequency does not even exist.This paper is dedicated to E. G. D. Cohen.     

Studies on Solid State Reactions of Coordination Compounds（LXXI）──Solid State Reactions of o－Aminobenzoic Acid with Copper（Ⅱ） Acetate and Formate at Room Temperature

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