关于开设内光电效应实验的探索与思考

介绍了开设以内光电效应为理论基础的半导体光电器件的重要性和迫切性,并详细介绍了内光电效应的理论与半导体光电器件的分类和应用前景。     

A local parallel superconvergence method for the incompressible flow by coarsening projection

In this article, we investigate a local parallel superconvergence method by coarsening projection for the incompressible Stokes flow. The method is a combination of the local superconvergence technique and the given framework of local parallel method. For the smooth subdomains, the local superconvergence method is applied in a higher order finite dimensional space corresponding to an appropriate coarse mesh on interior domain. Moreover, a useful and flexible local parallel method is designed to obtain the local parallel superconvergence results of presented method, which offset theoretical limitation of the model without the smoothness of the exact solution and a priori regularity of the underlying problem over the whole domain. © 2014 Wiley Periodicals, Inc. Numer Methods Partial Differential Eq 31: 1209–1223, 2015     

Comparison of the 13C (C = N) chemical shifts of substituted N‐(phenyl‐ethylene)‐anilines and substituted N‐(benzylidene)‐anilines

Comparison of ¹³C NMR of C = N bond chemical shifts δ_C(C = N) in substituted N‐(phenyl‐ethylene)‐anilines XArC(Me) = NArY (XPEAYs) with that in substituted N‐(benzylidene)‐anilines XArCH = NArY (XBAYs) was carried out. The δ_C(C = N) of 61 samples of XPEAYs were measured, and the substituent effect on their δ_C(C = N) were investigated. The results show the factors affecting the δ_C(C = N) of XPEAYs are quite different from that of XBAYs. A penta‐parameter correlation equation was obtained for the 61 compounds, which has correlation coefficient 0.9922 and standard error 0.12 ppm. The result indicates that, in XPEAYs, the inductive effects of substituents X and Y are major factors affecting the δ_C(C = N), while the conjugative effect of them have very little effect on the δ_C(C = N) and can be ignored. The substituent‐specific cross‐interaction effects between X and Y and between Me of C = N bond and substituent Y are important factors affecting the δ_C(C = N). Also, the excited‐state substituent parameter of substitute Y has certain contribution to the δ_C(C = N). Copyright © 2015 John Wiley & Sons, Ltd.     

Aharonov–Bohm effect in non-uniform crater-like quantum dot with double rim

We study electron energies in a double concentric quantum ring with anisotropy in the rims heights in the presence of the external magnetic field applied along the symmetry axis. To this end, we consider a model in which the thickness grows linearly from the axis up to the inner rim with a slope different from one between the inner and the outer rims. The anisotropy in the rims heights originated by the presence in the structure of various valleys we simulate by periodic dependence of the slope on the radial direction. We show that the wave functions of the electron confined in such structure can be found analytically if the slopes in all radial directions are the same, and by using a simple exact diagonalization procedure otherwise. The behavior of the electron energies as functions of the magnetic field, rings radii and rims heights, as well as the number of the valleys and their depths is consistently described with our formalism. The entanglement of the states with different radial and orbital quantum numbers, the period and the amplitude of the Aharonov–Bohm oscillations are very sensible to any variations of the rims heights.     

A scheme for a topological insulator field effect transistor

We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio.     

MHD squeezed flow of water functionalized metallic nanoparticles over a sensor surface

Present study is devoted to analyze the magnetohydrodynamics (MHD) squeezed flow of nanofluid over a sensor surface. Modeling of the problem is based on the geometry and the interaction of three different kinds of metallic nanoparticles namely: copper (Cu), alumina (Al₂O₃) and titanium dioxide (TiO₂) with the homogeneous mixture of base fluid (water). The self-similar numerical solutions are presented for the reduced form of the system of coupled ordinary differential equations. The effects of nanoparticles volume friction, permeable velocity and squeezing parameter for the flow and heat transfer within the boundary layer are presented through graphs. Comparison among the solvent are constructed for both skin friction and Nusselt number. Flow behavior of the working nanofluid according to the present geometry has analyzed through Stream lines. Conclusion is drawn on the basis of entire investigation and it is found that in squeezing flow phenomena Cu–water gives the better heat transfer performance as compare with the rest of mixtures.     

Dual-modality and dual-energy gamma ray densitometry of petroleum products using an artificial neural network

The prediction of volume fractions in order to measure the multiphase flow rate is a very important issue and is the key parameter of multi-phase flow meters (MPFMs). Currently, the gamma ray attenuation technique is known as one of the most precise methods for obtaining volume fractions. The gamma ray attenuation technique is based on the mass attenuation coefficient, which is sensitive to density changes; density is sensitive in turn to temperature and pressure fluctuations. Therefore, MPFM efficiency depends strongly on environmental conditions. The conventional solution to this problem is the periodical recalibration of MPFMs, which is a demanding task. In this study, a method based on dual-modality densitometry and artificial intelligence (AI) is presented, which offers the advantage of the measurement of the oil–gas–water volume fractions independent of density changes. For this purpose, several experiments were carried out and used to validate simulated dual modality densitometry results. The reference density point was established at a temperature of 20 °C and pressure of 1 bar. To cover the full range of likely density fluctuations, four additional density sets were defined (at changes of ±4% and ±8% from the reference point). An annular regime with different percentages of oil, gas and water at different densities was simulated. Four features were extracted from the transmission and scattered detectors and were applied to the artificial neural network (ANN) as inputs. The input parameters included the ²⁴¹Am full energy peak, ¹³⁷Cs Compton edge, ¹³⁷Cs full energy peak and total scattered count, and the outputs were the oil and air percentages. A multi-layer perceptron (MLP) neural network was used to predict the volume fraction independent of the oil and water density changes. The obtained results show that the proposed ANN model achieved good agreement with the real data, with an estimated root mean square error (RMSE) of less than 3.     

A novel nanoscale fin field effect transistor by amended channel: Investigation and fundamental physics

The present paper proposes a new Fin Field Effect Transistor (FinFET) with an amended Channel (AC). The fin region consists of two sections; the lower part which has a rounded shape and the upper part of fin as conventional FinFETs, is cubic. The AC-FinFET devices are proven to have a lower threshold voltage roll-off, reduced DIBL, better subthreshold slope characteristics, and a better gate capacitance in comparison with the C-FinFET. Moreover, the simulation result with three-dimensional and two-carrier device simulator demonstrates an improved output characteristic of the proposed structure due to reduction of self-heating effect. Due to the rounded shape of the lower fin region and decreasing corner effects there, the heat can flow easily, and the device temperature will decrease. Also the gate control over the channel increases due to the narrow upper part of the fin. The paper, thus, attempts to show the advantages of higher performance AC-FinFET device over the conventional one, and its effect on the operation of nanoscale devices.     

Hot carrier degradation mechanism interpretation by lateral distribution of interface and bulk trap density

We investigated the drain avalanche hot carrier effect (DAHC) of p-type metal-oxide-semiconductor field effect transistor of 0.14 μm channel length (PMOSFET) with SiON gate dielectric. Using three different stress conditions of substrate maximum current, the changes to threshold voltage, maximum transconductance, saturation current and channel leakage current was monitored. Concurrently, the lateral distribution of interface trap density (N_it) and bulk trapped charge density (N_ot) with stress time has been extracted along the 70 nm half channels from gate edge to drain junction, which is the first endeavor in describing charge traps along sub 100 nm short channels. The degradation of the PMOSFET was described by combining electrical property with N_it and N_ot profiles. Hot electron punch through (HEIP) effect was evidenced by negative Not distribution near the drain junction while more severe hot carrier degradation was successfully demonstrated by the empirical power law dependence of the electrical parameters N_it and N_ot. We have studied the evolution of degradation behavior along highly scaled tens of nanometer channel, and N_it and N_ot profile offers systematic study and interpretation of degradation mechanism of hot carrier effect in MOSFET devices.