In this article, we use some analytic and geometric characters of the smooth points in a sphere to study the isometric extension problem in the separable or reflexive real Banach spaces. We obtain that under some condition the answer to this problem is affirmative. 相似文献
In this paper, we study the nonperiodic first-order Hamiltonian system ù = J L(t)u +J H(t, u), where H ∈ C1(R × R2n). With some assumptions on L, the corresponding Hamiltonian operator has only discrete spectrum. By using the index theory for self-adjoint operator equation,we establish the existence of multiple homoclinic orbits for the asymptotically quadratic nonlinearty satisfying some twist conditions between infinity and origin. 相似文献
A novel scheme to multiply the repetition rate of a monolithic self‐mode‐locked laser for generating sub‐terahertz pulse sources is successfully demonstrated. A coated Yb:KGW crystal is designed to achieve a self‐mode‐locked operation at a repetition rate of 24 GHz with an average output power exceeding 1.0 W at a pump power of 4.8 W. A partially reflective mirror is utilized to combine with the output surface of the gain medium to constitute an external Fabry‐Perot cavity. It is theoretically and experimentally verified that adjusting the external cavity length to satisfy the commensurate condition can lead to the frequency spacing to be various order harmonics of the mode spacing of the monolithic cavity. The maximum pulse repetition rate of the laser output can be up to 216 GHz and the pulse duration is as short as 330 fs. More importantly, the overall characteristics of the first‐order temporal autocorrelation traces obtained by sequentially scanning the external cavity.length display an intriguing phenomenon of temporally fractional revivals, similar to the feature of spatial Talbot revivals.
Erbium (Er) doped GaN has been studied extensively for optoelectronic applications, yet its defect physics is still not well understood. In this work, we report a first‐principles hybrid density functional study of the structure, energetics, and thermodynamic transition levels of Er‐related defect complexes in GaN. We discover for the first time that ErGa–CN–VN, a defect complex of Er, a C impurity, and an N vacancy, and ErGa–ON–VN, a complex of Er, an O impurity, and an N vacancy, form defect levels at 0.18 eV and 0.46 eV below the conduction band, respectively. Together with ErGa–VN, a complex of Er and an N vacancy which has recently been found to produce a donor level at 0.61 eV, these defect complexes provide explanation for the Er‐related defect levels observed in experiments. The role of these defects in optical excitation of the luminescent Er center is also discussed. 相似文献