Vacuum Radiation,Entropy, and Molecular Chaos

Vacuum radiation causes a particle to make a random walk about its dynamical trajectory. In this random walk the root mean square change in spatial coordinate is proportional to t ^1/2, and the fractional changes in momentum and energy are proportional to t ^−1/2, where t is time. Thus the exchange of energy and momentum between a particle and the vacuum tends to zero over time. At the end of a mean free path the fractional change in momentum of a particle in a gas is very small. However, at the end of the mean free path each particle undergoes an interaction that magnifies the preceding change, and the net result is that the momentum distribution of the particles in a gas is randomized in a few collision times. In this way the random action of vacuum radiation and its subsequent magnification by molecular interaction produces entropy increase. This process justifies the assumption of molecular chaos used in the Boltzmann transport equation.     

Finite-temperature <Emphasis Type="Italic">φ</Emphasis><Superscript>4</Superscript> theory from the 2PI effective action: Two-loop truncation

Using resummation techniques based on the 2PI effective action we study the scalar φ ⁴ theory at finite temperature. We present an analytical as well as numerical study for a renormalized two-loop truncation of the action. Both the spectral properties and critical behaviour of the theory are investigated. Within the truncation, we explicitly check that the physical observables are UV-finite.     

Fluctuation of semiconductor surface potential in Si-SiO<Subscript>2</Subscript> structure after irradiation and subsequent annealing

Fluctuations of the semiconductor surface potential in a Si-SiO₂ structure, caused by irradiation with different high-energy particles (50 MeV electrons and 40 keV arsenic ions) and subsequent annealing, have been studied by measuring the semiconductor interface state parameters. It is established that the fluctuation of the semiconductor surface potential decreases slightly, from 0.049 V to 0.044 V, after irradiation, while a considerable increase is observed after annealing. For the samples irradiated by arsenic ions, the increase in fluctuation is much larger (0.096 V) than that for the electron-irradiated samples (0.06 V).     

Parameters to Define the Electron Beam Trajectory of a Double-Tapered Disc-Loaded Wideband Gyro-TWT in Profiled Magnetic Field

In the method of tapering the cross section of the interaction structure for broadbanding a gyro-TWT, the different portions of the interaction length of the tapered-cross-section waveguide become effective for different frequency ranges if the magnetic field and beam parameters are profiled to maintain the condition of electron cyclotron resonance throughout the interaction length. In the present paper, the study of profiling the magnetic field and beam parameters in steps of the stepped analytical model of a double-tapered disc-loaded circular waveguide was made throughout the steps of the model. In the observed profile, the magnetic flux density in a typical step relative to its value in first-step decreases from first-step (gun-end) to end-step (collector-end) of the model considering the up-tapering schemes, in which structure parameters increase from gun-end to collector-end. Also, the transverse beam velocity in a typical step relative to its value in first-step decreases from gun-end to collector-end. However, the Larmor radius in a typical step relative to its value in first-step as well as the hollow-beam radius in a typical step relative to its value in first-step, both increase from gun-end to collector-end in the model considering the up-tapering schemes.     

Thermally Conducting Partially Ionized Plasma in a Variable Magnetic Field

An infinitely extending homogenous partially ionized plasma endowed with several physical mechanisms and permeated by a variable magnetic field is considered. The combined effect of these parameters, namely, Hall currents, finite conductivity, ion viscosity, collision with neutrals and thermal conductivity on the gravitational instability of the plasma is studied. It is found that the several mechanisms play different physical roles in the perturbed problem. Jeans' Criterion is analyzed in the framework of Tsallis' statistics for possible modifications due to the presence of nonextensive effects. A simple generalization of the Jeans' criterion is obtained and the standard values are obtained in the limiting case q = 1, q being the nonextensive parameter. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Nonlinear Rayleigh–Taylor instability of two superposed magnetic fluids under parallel rotation and a normal magnetic field

The Rayleigh–Taylor instability (RTI) of a ferrofluid has been the subject of recent research, because of its implications on the stability of stellar and planetary interiors. This paper analyzes the effects of rotation and magnetic field on nonlinear RTI of two superposed ferrofluids. It is considered that the system is subjected to uniform parallel rotation and normal magnetic field. Surface tension acts at the interface. The method of multiple scales is utilized to obtain the solutions and dispersion relations are obtained for the nonlinear problem of RTI of magnetic fluids. Finally the stability of the problem is discussed.     

Excimer laser processing of ZnO thin films prepared by the sol-gel process

ZnO thin films were prepared on soda-lime glass from a single spin-coating deposition of a sol-gel prepared with anhydrous zinc acetate [Zn(C₂H₃O₂)₂], monoethanolamine [H₂NC₂H₄OH] and isopropanol. The deposited films were dried at 50 and 300 °C. X-ray analysis showed that the films were amorphous. Laser annealing was performed using an excimer laser. The laser pulse repetition rate was 25 Hz with a pulse energy of 5.9 mJ, giving a fluence of 225 mJ cm⁻² on the ZnO film. Typically, five laser pulses per unit area of the film were used. After laser processing, the hexagonal wurtzite phase of zinc oxide was observed from X-ray diffraction pattern analysis. The thin films had a transparency of greater than 70% in the visible region. The optical band-gap energy was 3.454 eV. Scanning electron microscopy and profilometry analysis highlighted the change in morphology that occurred as a result of laser processing. This comparative study shows that our sol-gel processing route differs significantly from ZnO sol-gel films prepared by conventional furnace annealing which requires temperatures above 450 °C for the formation of crystalline ZnO.     

Aligned carbon nanotubes catalytically grown on iron-based nanoparticles obtained by laser-induced CVD

Iron-based nanoparticles are prepared by a laser-induced chemical vapor deposition (CVD) process. They are characterized as body-centered Fe and Fe₂O₃ (maghemite/magnetite) particles with sizes ≤5 and 10 nm, respectively. The Fe particles are embedded in a protective carbon matrix. Both kind of particles are dispersed by spin-coating on SiO₂/Si(1 0 0) flat substrates. They are used as catalyst to grow carbon nanotubes by a plasma- and filaments-assisted catalytic CVD process (PE-HF-CCVD). Vertically oriented and thin carbon nanotubes (CNTs) were grown with few differences between the two samples, except the diameter in relation to the initial size of the iron particles, and the density. The electron field emission of these samples exhibit quite interesting behavior with a low turn-on voltage at around 1 V/μm.     

Analysis of excimer laser annealing of amorphous SiGe on La2O3//Si structures

The reduction of complementary metal oxide semiconductor dimensions through transistor scaling is in part limited by the SiO₂ dielectric layer thickness. Among the materials evaluated as alternative gate dielectrics one of the leading candidate is La₂O₃ due to its high permittivity and thermodynamic stability. However, during device processing, thermal annealing can promote deleterious interactions between the silicon substrate and the high-k dielectric degrading the desired oxide insulating properties.The possibility to grow poly-SiGe on top of La₂O₃//Si by laser assisted techniques therefore seems to be very attractive. Low thermal budget techniques such as pulsed laser deposition and crystallization can be a good choice to reduce possible interface modifications due to their localized and limited thermal effect.In this work the laser annealing by ArF excimer laser irradiation of amorphous SiGe grown on La₂O₃//Si has been analysed theoretically by a numerical model based on the heat conduction differential equation with the aim to control possible modifications at the La₂O₃//Si interface. Simulations have been carried out using different laser energy densities (0.26-0.58 J/cm²), different La₂O₃ film thickness (5-20 nm) and a 50 nm, 30 nm thick amorphous SiGe layer. The temperature distributions have been studied in both the two films and substrate, the melting depth and interfaces temperature have been evaluated. The fluences ranges for which the interfaces start to melt have been calculated for the different configurations.Thermal profiles and interfaces melting point have shown to be sensitive to the thickness of the La₂O₃ film, the thicker the film the lower the temperature at Si interface.Good agreement between theoretical and preliminary experimental data has been found.According to our results the oxide degradation is not expected during the laser crystallization of amorphous Si_0.7Ge_0.3 for the examined ranges of film thickness and fluences.     

膜蒸馏装置热容腔流场数值模拟的可行性分析

本文运用CFD软件,采用水作为工质,在第Ⅲ代膜组件基础上,对旋转切向入流空气隙膜蒸馏热容腔内的流场进行了模拟计算,通过数值模拟结果与实验数据的比较分析,验证了针对膜组件热容腔进行理论模拟所设置的物理模型和边界条件是符合实际的,理论模拟值和实验值的误差在20%范围内,其结果较为理想.