Effect of oxidation of graphene nanoribbons on electronic and magnetic properties

The electronic properties, band gap and ionization potential as well as the energies of the singlet and triplet states of zigzag and armchair graphene nanoribbons are calculated as a function of the number of oxygen atoms on the ribbon employing density functional theory at B3LYP/6-31G* level. The calculated band gaps indicate that both structures are semiconducting. The band gap of the armchair ribbons initially decreases followed by an increase with oxygen number. For zigzag ribbons the band gap decreases with increasing oxygen number whereas the ionization potential increases with oxygen content. In both armchair and zigzag ribbons the ionization potential shows a gradual increase with the number of oxygen atoms. Some of the oxygenated ribbons calculated have triplet ground states and have the density of states at the Fermi level for spin down greater than spin up suggesting the possibility they may be ferromagnetic semiconductors.     

第一性原理研究闪锌矿结构CrSe和CrAs半金属铁磁性的稳定性

运用第一性原理的全势能线性缀加平面波方法对闪锌矿结构CrSe和CrAs的电子结构进行自旋极化计算。闪锌矿结构CrSe和CrAs处于晶格平衡时都具有半金属性,它们自旋向下的电子能带带隙分别为3.38eV 和1. 79eV,同时,它们的自旋总磁矩分别为4.00和3.00μB/formula。自旋总磁矩主要来源于Cr的原子磁矩,Se和As的原子磁矩对总磁矩的贡献很小而且为负值,因而它们具有明显的铁磁性特征. 使晶体晶格在±10%的范围内发生各向同性形变,对闪锌矿结构CrSe和CrAs的电子结构进行计算. 计算结果表明,当晶格各向同性形变分别为-4 % ~ 10 %和-2 % ~10 %时,闪锌矿结构CrSe和CrAs仍然保持半金属铁磁性,并且总磁矩都稳定于4.00和3.00μB/formula.     

N空位对Cu掺杂AlN电磁性质的影响的第一性原理研究

利用基于密度泛函理论的平面波超软赝势法研究了N空位对Cu掺杂AlN的电子结构和磁学性质的影响。结果表明,与Cu最近邻的N原子更易失去形成N空位。N空位的引入减小了Cu掺杂AlN体系的半金属能隙;减弱了Cu及其近邻N原子的自旋极化的强度以及Cu3d与N2p轨道间的杂化,因而减小了体系的半金属铁磁性。因此,制备Cu掺杂AlN稀磁半导体时应尽可能地避免产生N空位。     

Ge纳米结构的形貌与铁磁性研究

利用等离子体增强化学气相沉积技术制备了厚度不同的Ge薄膜, 随着样品厚度的减小, 样品表现出了室温铁磁性. 厚度为12 nm样品经过300 ℃退火后, 由于颗粒细化, 颗粒之间的界面增加, 界面缺陷增加, 样品表现出最大的铁磁性 (50 emu/cm³). 场冷却和零场冷却曲线测试表明居里温度约为350 K. 进行600 ℃退火后, 颗粒团聚, 样品的铁磁性最小. 当样品厚度进一步减小为6 nm时, 沉积态样品表现出铁磁性和顺磁性共存. 对6 nm厚的样品进行300 ℃退火后, 样品只具有铁磁性. 进行600 ℃退火后, 样品却只具有顺磁性. 12 nm 和6 nm 厚的Ge纳米结构薄膜随退火温度变化表现出不同的磁性规律, 我们认为是由于样品的颗粒大小和颗粒分布不同造成的. 样品越薄, Si基底与Ge薄膜之间的界面缺陷越明显, 界面缺陷以及Ge颗粒之间的界面缺陷为样品提供了未配对电子, 未配对电子的铁磁性耦合强度与样品颗粒的分布以及颗粒之间的结合有一定的关系. 颗粒之间分散或颗粒之间的融合程度大都将会降低样品的铁磁性.     

3d过渡金属磷系化合物半金属铁磁性的第一性原理研究

在基于密度泛函理论(DFT)的广义梯度近似(GGA)下,采用第一性原理平面波赝势(PWP)方法,对3d过渡金属磷系闪锌矿结构的化合物XY(X=V、Cr、Mn,Y=P、As、Sb)的电子结构进行了计算,通过分析它们的能带结构、态密度、磁矩等,发现除闪锌矿结构的化合物MnP和MnAs不是真正的半金属铁磁体外,其余闪锌矿结构的化合物在能带结构和态密度均体现出半金属特征.     

结构相变对Fe掺杂TiO2薄膜室温铁磁性的影响

采用直流磁控溅射方法在玻璃基底上制备了不同Fe掺杂浓度的TiO₂薄膜, 并对其晶体结构和磁特性进行了研究.在所有掺杂样品中,均观察到了室温铁磁性, 磁性源于Fe离子与其近邻空间分布的空穴相互作用. 在掺杂量为7%的锐钛矿相薄膜中观察到了最大的磁化强度. 随着Fe掺杂浓度的进一步增加, TiO₂的晶体结构逐渐由锐钛矿相向金红石相转变,并且磁性减弱. 不同结构的TiO₂中Ti–O键长不同,导致替代的磁性Fe离子与空穴的作用强度发生改变, 进而使其磁性发生变化. 关键词： 稀磁半导体 结构相变 铁磁性     

The investigation of room temperature ferromagnetism in (1 0 0) oriented BaNb2O6 PLD films on LaAlO3 (1 0 0) substrate

(1 0 0) oriented BaNb₂O₆ films have been successfully grown on LaAlO₃ (1 0 0) substrate at 750 °C or 450 °C in vacuum by pulsed laser deposition. The deposited BaNb₂O₆ PLD films exhibit room-temperature ferromagnetism. Ab initio calculations demonstrate that stoichiometric BaNb₂O₆ and that with barium vacancy are nonmagnetic, while oxygen and niobium vacancy can induce magnetism due to the spin-polarization of Nb s electrons and O p electrons respectively. Moreover, ferromagnetic coupling is energetically more favorable when two Nb/O vacancies are located third-nearest-neighbored. The observed room temperature ferromagnetism in BaNb₂O₆ films should be mainly induced by oxygen vacancies introduced during vacuum deposition, with certain contribution by Nb vacancies.     

Ag掺杂AlN半导体光电性质的第一性原理研究

采用基于密度泛函理论的第一性原理平面波超软赝势法,对Ag掺杂AlN 32原子超晶胞体系进行几何结构优化,计算并分析体系的电子结构、磁性和光学性质.结果表明:Ag掺杂后,Ag4d态电子与其近邻的N2p态电子发生杂化,引入杂质带形成受主能级,实现p型掺杂,使体系的导电能力增强,同时表现出金属性和弱磁性,其净磁矩为1.38μ_в.掺杂形成的N-Ag键电荷集居数较小,表现出强的离子键性质.掺杂后体系的介电函数虚部和光吸收谱在低能区出现新的峰值,同时复折射率函数在低能区发生变化,吸收边向低能方向延展,体系对长波吸收加强,能量损失明显减小.     

Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO

The influence of oxygen vacancy on the magnetism of Co-doped ZnO has been investigated by the first-principles calculations.It is suggested that oxygen vacancy and its location play crucial roles on the magnetic properties of Co-doped ZnO.The exchange coupling mechanism should account for the magnetism in Co-doped ZnO with oxygen vacancy and the oxygen vacancy is likely to be close to the Co atom.The oxygen vacancy (doping electrons) might be available for carrier mediation but is localized with a certain length and can strengthen the ferromagnetic exchange interaction between Co atoms.     

Ferromagnetism in epitaxial orthorhombic YMnO3 thin films

Epitaxial orthorhombic YMnO₃ thin films, (0 0 1) oriented, have been grown by pulsed laser deposition on (0 0 1)SrTiO₃ substrates. Their crystal structure and magnetic response have been studied in detail. Although bulk o-YMnO₃ is antiferromagnetic, our magnetic measurements reveal intriguing thermal hysteresis between the zero-field-cooled and field-cooled curves below the onset of the antiferromagnetic ordering temperature, thus signaling a more complex magnetic structure with net ferromagnetic moments. We discuss on the possible origin of this net magnetization and we have found a correlation of the magnetic response with the strain state of the films. We propose that substrate-induced strain modifies the subtle competition of magnetic interactions and leads to a non-collinear magnetic state that can thus be tuned by strain engineering.