First-Principles Studies for the Electronic Structures of Diluted Magnetic Semiconductors （Ga, Fe）As

First-principles LMTO-ASA band calculations are performed for Ga1-xFezAs (x = 1, 1/4, 1/8) by assuming supercell structures. It is found that the antiferromagnetic (AFM) state is stable for x = 1/4. For x = 1/8, ferromagnetic (FM) state is more stable than AFM state, and no stable magnetic state exists for x = 1. In both the cases the magnetic moments of As and Ga atoms are parallel to those of the nearest Fe atoms due to the p-d hybridization. Fhrther, the band structure shows rather localized Fe 3d state in the gap, and the parallel polarization is confined rather in the vicinity of Fe site.     

Structural and magnetic studies on Zr doped ZnO diluted magnetic semiconductor

In this study, Zirconium doped Zn_1−xZr_xO (with x = 0.00–0.10) samples have been prepared by formal solid-state reaction technique. The Zr doped ZnO samples annealed at 1100 °C and characterized by different characterization techniques, such as X-ray diffraction (XRD), Scanning electron microscope (SEM), Vibrating sample magnetometer (VSM) and Fourier transform infrared spectroscopy (FTIR). The X-ray diffraction (XRD) used to study the structural properties. XRD pattern showed that lattice parameters, “a”, “c”, unit cell volume and Zn–O bond length increase with doping content (x ≤ 0.04) where as these decrease with x > 0.04. On the other hand, reverse trend observed with lattice distortion. The crystallite size decreases with increasing doping content of Zr. FTIR employed to investigate functional chemical bonding properties of different elements and compounds present in materials. The low, medium and high frequency absorption bands observed at 630, 1500 and 3435 cm⁻¹, which were the common features of Zn–O, H–O–H and O–H bond respectively. SEM used to study surface morphology and measured grain size of specimen. The surface becomes dense and grain size decreases with increasing degree of Zr contents. The SEM micrograph also shows the presence of spherical micro size particles and formation of pores in samples. Magnetic properties were obtained using VSM. The samples exhibit room temperature ferromagnetism. The magnetic hysteresis loops show variation in the value of magnetic parameter. The saturation magnetization (M_s) and coercivity (H_c) decrease, while remanence magnetization (M_r) shows gradually increasing trend with Zr content. VSM measurement reveals that sample Zn_0.96Zr_0.4O show better result as compared to x = 0.06–0.10.     

Hydrogen shallow donors in Co-doped ZnO showing room-temperature ferromagnetism

Room-temperature ferromagnetism has been identified in sol–gel-prepared Co-doped ZnO (ZnCoO), hydrogen being incorporated by a linear polymer polyvinyl pyrrolidone. The magnetic order was investigated by the X-ray photoemission and magnetization measurements in view of the interstitial hydrogen being coupled with Co²⁺. The electron paramagnetic resonance measurements revealed that hydrogens not contributing to the magnetic order occupy the shallow donor levels in the hydrogenated ZnCoO system.     

La-doped BiFeO_3:Synthesis and multiferroic property study

A new sol-foam-gel method was developed to fabricate La-doped BiFeO3multiferroic materials. It was demonstrated that a gradual increase in the content of La-doped into BiFeO3results in its structure changing from rhombohedral to orthorhombic. A study of other property changes indicates that La-doping in BiFeO3enhances its ferromagnetism and ferroelectricity. A temperature-dependent magnetization study suggests that the magnetic property of La-doped BiFeO3samples varied from antiferromagnetic to ferromagnetic as the content of La-doped into BiFeO3increased from 0 to 20%.Unique temperature-dependent zero field cooling(ZFC) and field cooling(FC) magnetization behaviors were observed in 15% La-doped BiFeO3— its ZFC temperature-dependent magnetization being ferromagnetic and its FC temperaturedependent magnetization being antiferromagnetic. A possible mechanism of such an interesting M–T behavior is discussed.     

热退火对Mn离子注入非故意掺杂GaN微结构、光学及磁学特性的影响

通过Mn离子注入非故意掺杂GaN外延层制备了GaN:Mn薄膜,并研究了退火温度对GaN:Mn薄膜的微结构、光学及磁学特性的影响.对不同退火温度处理后的GaN:Mn薄膜的拉曼谱测试显示,出现了由与离子注入相关的缺陷的局域振动(LV)和(Ga,Mn)N中Mn离子的LV引起的新的声子模.在GaN:Mn薄膜的光致发光谱中观察到位于2.16,2.53和2.92 eV处的三个新发光峰(带),其中位于2.16 eV处的新发光带不能排除来自Mn相关辐射复合的贡献.对GaN:Mn薄膜的霍尔测试显示,退火处理后样品表现出n型体材料特征.对GaN:Mn薄膜的振动样品磁强计测试显示,GaN:Mn薄膜具有室温铁磁性,其强弱受Mn相关杂质带中参与调节磁相互作用的空穴浓度的影响.     

Fe、Ni共掺杂ZnO基稀磁半导体光学性能与铁磁性研究

采用水热法成功制备了不同掺杂浓度的Zn1-2x Fe x Ni x O(x=0,0.025,0.05,0.1)稀磁半导体材料,利用X射线衍射(XRD)、透射电子显微镜(TEM)和X射线能量色散分析仪(XEDS)对样品进行表征,并结合拉曼(Raman)光谱、光致发光光谱(PL)和振动样品磁强计(VSM)研究样品的光学性能和磁学性能。结果表明,水热法制备的样品具有结晶性良好的纤锌矿结构,没有杂峰出现,形貌为纳米棒状结构,分散性良好。Fe2+、Ni2+是以替代的形式进入ZnO晶格中,Fe和Ni的掺杂使得晶体中的缺陷和应力增加,拉曼光谱峰位发生红移,光致发光光谱发生猝灭现象。另外,共掺杂样品在室温条件下存在明显的铁磁性,饱和磁化强度随着掺杂量的增加而增强。     

Fe、Ni共掺杂ZnO基稀磁半导体光学性能与铁磁性研究

采用水热法成功制备了不同掺杂浓度的Zn_1-2xFe_xNi_xO（x=0,0.025,0.05,0.1）稀磁半导体材料,利用X射线衍射（XRD）、透射电子显微镜（TEM）和X射线能量色散分析仪（XEDS）对样品进行表征,并结合拉曼（Raman）光谱、光致发光光谱（PL）和振动样品磁强计（VSM）研究样品的光学性能和磁学性能。结果表明,水热法制备的样品具有结晶性良好的纤锌矿结构,没有杂峰出现,形貌为纳米棒状结构,分散性良好。Fe²⁺、Ni²⁺是以替代的形式进入ZnO晶格中,Fe和Ni的掺杂使得晶体中的缺陷和应力增加,拉曼光谱峰位发生红移,光致发光光谱发生猝灭现象。另外,共掺杂样品在室温条件下存在明显的铁磁性,饱和磁化强度随着掺杂量的增加而增强。     

Ferromagnetism in one-dimensional Hubbard model induced by the next-nearest-neighbor hopping at electron density 3/2

Ferromagnetism in the one-dimensional Hubbard model with the next-nearest-neighbor hopping is explored by using the exact-diagonalization method in a small cluster and the equation-of-motion method in the thermodynamic limit with electron density n = 3/2. With these two complementary methods, it is found that an intermediate value of the next-nearest- neighbor hopping amplitude tl tends to stabilize the fully polarized ferromagnetic state under the condition that the on-site coulomb interaction U is sufficiently large in our model. The ground-state phase diagram of the model is presented in the tl-U plane.     

Magnetic and electromagnetic absorption properties of FeNi alloy nanoparticles supported by reduced graphene oxide

FeNi alloy nanoparticles (NPs) supported by reduced graphene oxide (RGO) (FeNi/RGO nanocomposites) were successfully synthesized through in‐situ reduction. Large amounts of sphere‐like FeNi NPs are uniformly deposited on the RGO nanosheets. The magnetic hysteresis measurement reveals the ferromagnetic behavior of the nanocomposites at room temperature. According to the electromagnetic (EM) characteristics, the FeNi/RGO nanocomposites show outstanding EM absorption properties in the 2–18 GHz range, as evidenced by the wide effective absorption bandwidth (up to 3.3 GHz, with reflection loss R_L < –10 dB) and a minimal R_L (–32 dB) at 12.4 GHz with a thickness of 1.5 mm. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

One‐Step Exfoliation and Fluorination of Boron Nitride Nanosheets and a Study of Their Magnetic Properties

A novel, simple, and efficient method for the preparation of the fluorinated hexagonal boron nitride nanosheets (F‐BNNSs) and the corresponding magnetic properties is presented. A one‐step route is used to exfoliate and fluorinate the BNNSs by ammonium fluoride (NH₄F) from hexagonal boron nitride (h‐BN) powder. Through related instrument characterizations and theoretical calculations, we confirm that large‐area and few‐layer F‐BNNSs were successfully produced by this method, which can be attributed to a fluorination‐assisted exfoliation mechanism from the bulk h‐BN in NH₄F. More intriguingly, we initially verified that the as‐prepared F‐BNNSs exhibit ferromagnetic characteristics, which would have good potential applications in spintronic devices.