X-ray diffraction and dielectric spectroscopy studies on a partially fluorinated ferroelectric liquid crystal from the family of terphenyl esters

The fluorinated compound, (S)-4′′-(6-perfluoropentanoyoxyhexyl-1-oxy)-2′,3′-difluoro-4-(1-methylheptyloxycarbonyl)-[1,1′:4′,1′′]-terphenyl, which exhibits antiferroelectric SmC_A*, ferroelectric SmC* and paraelectric SmA* phases, has been investigated by polarising optical microscopy, differential scanning calorimetry, X-ray diffraction and frequency-dependent dielectric spectroscopy methods. X-ray studies have revealed that the layer thickness remains almost constant in the SmA* phase but within the SmC* and SmC_A* phases it decreases with decreasing temperature, a step jump being observed only at the SmA*–SmC* transition. The tilt angle in the SmC_A* phase decreases from 22.2° to 19.5°, and in the SmC* phase it decreases from 18.8° to 5.5°. Spontaneous polarisation is found to be quite high and varies between 74.1 and 118.7 nC cm^?2. The variation in ε′ and ε′′ with temperature shows a discontinuous change at the transition temperatures. Goldstone mode relaxation is only observed in the ferroelectric and antiferroelectric phases and is found to be of the Cole–Cole type. The soft mode is observed on application of a bias field near the SmC*–SmA* transition. Neither the soft mode nor the anti-phase azimuthal angle fluctuation mode is observed in SmC_A*. Rotational viscosity decreases quite rapidly with temperature but in a different manner in the ferroelectric and antiferroelectric phases. Activation energy for this process is found to be 48.14 kJ mol^?1 in the SmC* phase.     

A novel two‐dimensional CdII coordination polymer: poly[aqua[μ4‐2‐(4‐carboxylatobenzoyl)benzoato]cadmium(II)]

The title Cd^II coordination framework, [Cd(C₁₅H₈O₅)(H₂O)]_n or [Cd(bpdc)(H₂O)]_n [H₂bpdc is 2‐(4‐carboxybenzoyl)benzoic acid], has been prepared and characterized using IR spectroscopy, elemental analysis, thermal analysis and single‐crystal X‐ray diffraction. Each Cd^II centre is six‐coordinated by two O atoms from one 2‐(4‐carboxylatobenzoyl)benzoate (bpdc²⁻) ligand in chelating mode, three O‐donor atoms from three other bpdc²⁻ anions and one O atom from a coordinated water molecule in an octahedral coordination environment. Two crystallographically equivalent Cd^II cations are bridged by one O atom of the 2‐carboxylate group of one bpdc²⁻ ligand and by both O atoms of the 4‐carboxylate group of a second bpdc²⁻ ligand to form a binuclear [(Cd)₂(O)(OCO)] secondary building unit. Adjacent secondary building units are interlinked to form a one‐dimensional [Cd(OCO)₂]_n chain. The bpdc²⁻ ligands link these rod‐shaped chains to give rise to a complex two‐dimensional [Cd(bpdc)]_n framework with a 4,4‐connected binodal net topology of point symbol {4³.6².8}. The compound exhibits a strong fluorescence emission and typical ferroelectric behaviour in the solid state at room temperature.     

The Rayleigh law in silicon doped hafnium oxide ferroelectric thin films

A wealth of studies have confirmed that the low‐field hysteresis behaviour of ferroelectric bulk ceramics and thin films can be described using Rayleigh relations, and irreversible domain wall motion across the array of pining defects has been commonly accepted as the underlying micro‐mechanism. Recently, HfO₂ thin films incorporated with various dopants were reported to show pronounced ferroelectricity, however, their microscopic domain structure remains unclear till now. In this work, the effects of the applied electric field amplitude, frequency and temperature on the sub‐coercive polarization reversal properties were investigated for 10 nm thick Si‐doped HfO₂ thin films. The applicability of the Rayleigh law to ultra‐thin ferroelectric films was first confirmed, indicating the existence of a multi‐domain structure. Since the grain size is about 20–30 nm, a direct observation of domain walls within the grains is rather challenging and this indirect method is a feasible approach to resolve the domain structure. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Thin-film multi-layer capacitors using Bi2Mg2/3Nb4/3O7 (BMNO) pyrochlore thin films via radio-frequency sputtering

Thin-film multi-layer ceramic capacitors (MLCCs) were prepared using high-dielectric constant Bi₂Mg_2/3Nb_4/3O₇ thin-films deposited at room temperature via radio-frequency magnetron sputtering. The multi-layer capacitors, in sizes 0402, 0603 and 1005, were well equipped with both inner and outer Cu electrodes. The capacitances of the bi-layer capacitors were twice that of the single-layer version in sizes 0402, 0603, and 1005. The 200 nm-thick Bi₂Mg_2/3Nb_4/3O₇ thin-films would be suitable for thin-film multi-layer capacitor applications.     

隔膜对双电层电容器和混合型电池-超级电容器的电化学性能的影响

隔膜是双电层电容器和混合型电池-超级电容器等电化学储能器件的重要组成元件.本文采用1 mol?L-1四乙基四氟硼酸铵的丙烯碳酸酯电解液制备了基于活性炭的扣式双电层电容器,并采用1 mol?L-1六氟磷酸锂锂离子电解液制备了(LiNi0.5Co0.2Mn0.3O2+活性炭)/石墨体系的混合型电池-超级电容器.研究了不同类型隔膜的物理化学性能,以及其对双电层电容器和混合型电池-超级电容器的电化学性能的影响.四种隔膜分别是无纺布聚丙烯毡、多孔聚丙烯薄膜、Al2O3涂层的聚丙烯薄膜和纤维素纸隔膜.进行了表面形貌、差示扫描量热、电解液吸液量和表观接触角测试表征.电化学测试表明,采用纤维素隔膜的双电层电容器具有最高的比电容和更优的倍率性能,电容器的自放电性能差别不大.而对于混合型电池-超级电容器,采用聚丙烯薄膜和无纺布聚丙烯毡隔膜器件的比容量比其它器件约高20%,且采用纤维素隔膜的器件自放电率最高.     

Room‐Temperature Ferroelectric Material Composed of a Two‐Dimensional Metal Halide Double Perovskite for X‐ray Detection

Although two‐dimensional (2D) metal–halide double perovskites display versatile physical properties due to their huge structural compatibility, room‐temperature ferroelectric behavior has not yet been reported for this fascinating family. Here, we designed a room‐temperature ferroelectric material composed of 2D halide double perovskites, (chloropropylammonium)₄AgBiBr₈, using an organic asymmetric dipolar ligand. It exhibits concrete ferroelectricity, including a Curie temperature of 305 K and a notable spontaneous polarization of ≈3.2 μC cm^?2, triggered by dynamic ordering of the organic cation and the tilting motion of heterometallic AgBr₆/BiBr₆ octahedra. Besides, the alternating array of inorganic perovskite sheets and organic cations endows large mobility‐lifetime product (μτ=1.0×10^?3 cm² V^?1) for detecting X‐ray photons, which is almost tenfold higher than that of CH₃NH₃PbI₃ wafers. As far as we know, this is the first study on an X‐ray‐sensitive ferroelectric material composed of 2D halide double perovskites. Our findings afford a promising platform for exploring new ferroelectric materials toward further device applications.     

Maximization of Spatial Charge Density: An Approach to Ultrahigh Energy Density of Capacitive Charge Storage

Capacitive energy storage has advantages of high power density, long lifespan, and good safety, but is restricted by low energy density. Inspired by the charge storage mechanism of batteries, a spatial charge density (SCD) maximization strategy is developed to compensate this shortage by densely and neatly packing ionic charges in capacitive materials. A record high SCD (ca. 550 C cm^?3) was achieved by balancing the valance and size of charge‐carrier ions and matching the ion sizes with the pore structure of electrode materials, nearly five times higher than those of conventional ones (ca. 120 C cm^?3). The maximization of SCD was confirmed by Monte Carlo calculations, molecular dynamics simulations, and in situ electrochemical Raman spectroscopy. A full‐cell supercapacitor was further constructed; it delivers an ultrahigh energy density of 165 Wh L^?1 at a power density of 150 WL^?1 and retains 120 Wh L^?1 even at 36 kW L^?1, opening a pathway towards high‐energy‐density capacitive energy storage.     

High‐Tc Enantiomeric Ferroelectrics Based on Homochiral Dabco‐derivatives (Dabco=1,4‐Diazabicyclo[2.2.2]octane)

1,4‐Diazabicyclo[2.2.2]octane (dabco) and its derivatives have been extensively utilized as building units of excellent molecular ferroelectrics for decades. However, the homochiral dabco‐based ferroelectric remains a blank. Herein, by adding a methyl (Me) group accompanied by the introduction of homochirality to the [H₂dabco]²⁺ in the non‐ferroelectric [H₂dabco][TFSA]₂ (TFSA=bis(trifluoromethylsulfonyl)ammonium), we successfully designed enantiomeric ferroelectrics [R and S‐2‐Me‐H₂dabco][TFSA]₂. The two enantiomers show two sequential phase transitions with transition temperature (T_c) as high as 405.8 K and 415.8 K, which is outstanding in both dabco‐based ferroelectrics and homochiral ferroelectrics. To our knowledge, [R and S‐2‐Me‐H₂dabco][TFSA]₂ are the first examples of dabco‐based homochiral ferroelectrics. This finding opens an avenue to construct dabco‐based homochiral ferroelectrics and will inspire the exploration of more eminent enantiomeric molecular ferroelectrics.     

高居里温度铁电单晶PIN-PT的机电性能

弛豫铁电单晶Pb(In_1/2Nb_1/2)O₃-PbTiO₃(PIN-PT)相较于常用的Pb(Mg_1/3Nb_2/3)O₃-PbTiO₃(PMN-PT)具有更高的居里温度,在高稳定性、高性能的传感器、换能器方面具有应用前景。本工作采用谐振法研究了[001]方向极化的0.66PIN-0.34PT铁电单晶的全矩阵机电性能参数。0.66PIN-0.34PT 单晶的三方-四方相变温度(T_RT)约为160 ℃,居里温度(T_C)约为260 ℃,室温压电系数d₃₃、d₃₁、d₁₅分别为1 340 pC/N、-780 pC/N、321 pC/N,介电常数ε^T₃₃、ε^S₃₃、ε^T₁₁、ε^S₁₁分别为2 700、905、2 210、1 927,机电耦合系数 k₃₃、k₃₁、k₁₅、k_t分别为 87%、58%、38%、61%。其纵向压电常数(d₃₃)和纵向机电耦合系数(k₃₃)小于 PMN-PT 单晶,但是横向压电性能(d₃₁)和剪切压电性能(d₁₅)都略高于PMN-PT单晶。另外,研究了机电耦合性能随温度的变化趋势,发现0.66PIN-0.34PT单晶在150 ℃以下有较好的温度稳定性。     

新型BT-BMT-xBNT无铅高储能密度陶瓷研究

本文采用传统固相反应法,成功制备了新型无铅弛豫铁电陶瓷(1-x)[0.9BaTiO₃-0.1Bi(Mg_0.25Ta_0.5)O₃]-xBi_0.5Na_0.5TiO₃。结果表明,较高居里温度的Bi_0.5Na_0.5TiO₃的引入,使得材料体系中建立了更多的以Bi—O耦合为主的极性纳米区域,弥补了因Bi(Mg_0.25Ta_0.5)O₃的加入导致的宏观极化强度的减少,提高了材料的饱和极化强度,实现了较高储能密度的同时具有更好的温度稳定性。在245 kV/cm电场强度下,x=0.2样品的储能密度约为4.01 J/cm³,储能效率约为84.86%,同时该组分在20~170 ℃储能密度的变化率小于5%,储能效率的变化率小于6%,表现出优异的温度稳定性。