Curved Ferroelectric Liquid Crystal Matrix Displays Driven by Field-Sequential-Color and Active-Matrix Techniques

This paper describes a curved field-sequential-color matrix display using fast-response ferroelectric liquid crystal. Black matrix and transparent electrode patterns were formed on a thin plastic substrate by a transfer method from a glass substrate. While a composite film of liquid crystal and micro-polymers of walls and fibers was formed between the flexible substrates by printing, laminating and curing processes of a solution of monomers and liquid crystal, the mechanical stability was enhanced by use of multi-functional monomers to form large display panels. The image pixels of the matrix panel were driven by an active matrix scheme using an external switch transistor array at a frequency of 180 Hz for intermittent three-primary-color backlight illumination. The flexible A4-paper-sized color display with 24 × 16 pixels and 60 Hz field frequency was demonstrated by illuminating it with sequential three-primary-color lights from light-emitting diodes of the backlight. Our display system is useful in various information displays because of its freedom of setting and location.     

宽阻带抑制的高温超导带通滤波器设计

提出了一种新型加载插指电容的U型阶跃阻抗谐振器,该谐振器可用于实现高温超导带通滤波器的宽阻带抑制。利用所提出的新型谐振器结构,设计并制作了一个4节切比雪夫型高温超导带通滤波器。滤波器中心频率为1026 MHz,带宽12.6 MHz,第一谐频频率5121 MHz,第一谐频与基频的比值为4.92,阻带抑制度优于60 dB。     

Brittle-Ductile Transition of Ferroelectric Ceramics Induced by Thermally Activated Dislocation Emission

Thermally activated dislocation emission in high-temperature ferroelectric ceramics is investigated through an assumption of thermal stability and a novel analytical method. The stress intensity factor (SIF) arising from domain switching is evaluated by using a Green's function method, and the critical applied electric field intensity factor (CAEFIF) for brittle fracture at room temperature is obtained. Besides, the lowest temperature for single dislocation emission before brittle fracture is also obtained by constructing an energy balance. The multi-scale analysis of facture toughness of the ferroelectric ceramics at high temperature is carried out. Through the analysis, the CAEFIF for crack extension is recalculated. The results show that the competition and interaction effects between dislocation emission and brittle fracture are very obvious. Besides, the higher critical activation temperature, the more columns of obstacles will be overcome. Additionally, the shielding effect arising from thermally activated dislocations is remarkable, thus, the brittle-ductile transition can promote the fracture toughness of high-temperature ferroelectric ceramics.     

Effect of the chiral chain length on structural and phase properties of ferroelectric liquid crystals

Studies of structural and phase properties obtained on several ferroelectric liquid crystalline materials with 2-alkoxypropionate group used as a chiral centre and without any lateral substitution are presented. In dependence on the chiral chain length these compounds exhibit the cholesteric N* phase, the ferroelectric smectic C* and a low-temperature SmX phase. Values of the spontaneous polarization and spontaneous tilt angle have been determined within the whole range of the SmC* phase. A low-temperature SmX phase has been identified as the orthogonal hexatic SmB* phase. The molecular parameters, namely the layer spacing in the SmC* and SmB* phases and the average intermolecular distances (D) between neighbouring parallel molecules in all investigated phases have been determined using the results of the X-ray diffraction obtained on non-oriented samples. The effect of the chiral chain length on mesomorphic, structural and physical properties of the studied ferroelectric liquid crystalline materials is discussed.     

Multiferroic tunnel junctions

Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junctions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four resistance state device. We have recently studied the ferroelectric tunneling using a scanning probe technique and multiferroic tunnel junctions using ferromagnetic La_0.7Ca_0.3MnO₃ and La_0.7Sr_0.3MnO₃ as the electrodes and ferroelectric (Ba, Sr)TiO₃ as the barrier in trilayer planner junctions. We show that very thin (Ba, Sr)TiO₃ films can sustain ferroelectricity up till room temperature. The multiferroic tunnel junctions show four resistance states as predicted and can operate at room temperatures.     

氮掺杂碳气凝胶电极材料的制备及性能

以三聚氰胺（M）、间苯二酚（R）和甲醛（F）为原料,经溶胶-凝胶法、超临界干燥和高温碳化制备了系列的氮掺杂碳气凝胶（NCAs）。X射线光电子能谱(XPS)分析表明,氮元素成功地引入到碳气凝胶中,并且可以通过调节三聚氰胺掺杂量来控制氮掺杂量;扫描电子显微镜（SEM）和N2吸附测试显示出不同氮掺杂量的碳气凝胶的微观结构差异较大,随着氮含量的增加,比表面积有先减后增的趋势;在6 mol/L KOH溶液中进行的恒流充放电和循环伏安测试表明,引入氮元素能够极大地改善碳气凝胶的电化学性能,最高比电容量达176 Fg-1,并且凝胶具有良好的电容特性和可逆性。     

高场强下金属化膜电容器绝缘电阻特性

分析了高电场强度下金属化膜电容器绝缘电阻的特点,得出高电场强度下金属化膜电容器绝缘电阻是电容器介质膜泄漏和自愈过程的综合反映。针对高场强下的应用条件提出一种金属化膜电容器绝缘电阻的测试方法,并对高场强下电容器的绝缘电阻进行测试。测试结果表明:在300~400 V/m工作场强范围内金属化膜电容器绝缘电阻随工作场强增大会急剧减小,由于自愈的作用,绝缘电阻下降幅度随场强增加会逐渐变缓;在20~50 ℃工作温度范围内,金属化膜电容器绝缘电阻随温度升高会急剧减小,同样由于自愈的作用,绝缘电阻下降幅度随温度增高会逐渐变缓。分析得出,高温高场强下金属化膜电容器介质膜泄漏将会导致电容器电压出现明显下降,影响电容器和脉冲功率系统的储能效率。     

Si基Bi4Ti3O12铁电薄膜的制备与特性研究

采用sol-gel工艺, 在分层快速退火的工艺条件下成功地制备了高质量Si基Bi_{4Ti3O12铁电薄膜. 研究了Si基Bi4Ti3O12薄膜的生长行为、铁电性能、C-V特性和疲劳特性. 研究表明: Si基Bi4Ti3O12薄膜具有随退火温度升高沿c轴择优生长的趋势; 退火温度通过影响薄膜的晶粒尺寸、生长取向和薄膜中载流子的浓度来改变Si基Bi关键词： sol-gel法 铁电薄膜 4Ti3O12')" href="#">Bi4Ti3O12 C-V特性}     

用电子分析天平测量静电力及真空介电常量

介绍了用电子分析天平测量平行板电容器两极板间的静电力和真空介电常量的原理和方法．     

钛酸锶钡材料应用于超高密度动态随机存储器的研究

铁电钛酸锶钡材料具有十分优越的介电性能 :高的介电常数 ,较低的介电损耗 ,好的绝缘漏电性能 ;而且 ,通过调节材料中的Ba/Sr成分比 ,可改变材料的居里相变温度TC,以满足特定应用环境的温度需要 ,在超高密度集成的动态随机存储器 (DRAM)方面表现出广阔的应用前景 .文章概括介绍了BaxSr1-xTiO3 薄膜材料在DRAM应用中已取得的最新研究进展 ,并对这一应用所面临的问题也进行了详细讨论