A threshold voltage model MOSFETs considering for high-k gate-dielectric fringing-field effect

In this paper, a threshold voltage model for high-k gate-dielectric metal-oxide-semiconductor field-effect transistors （MOSFETs） is developed, with more accurate boundary conditions of the gate dielectric derived through a conformal mapping transformation method to consider the fringing-field effects including the influences of high-k gate-dielectric and sidewall spacer. Comparing with similar models, the proposed model can be applied to general situations where the gate dielectric and sidewall spacer can have different dielectric constants. The influences of sidewall spacer and high-k gate dielectric on fringing field distribution of the gate dielectric and thus threshold voltage behaviours of a MOSFET are discussed in detail.     

A Theory of Electron Transfer in Bridged and Supramolecular Systems

Expressions are derived for the tunnel electric current between two metals produced by the adiabatic transitions of the electrons through a bridge electron level. A new possible physical phenomenon is discussed, viz. electronically driven oscillations of the electron bridge level between two molecular wires.     

SW-Ⅱ型数显温控XL-Ⅰ箱形高温炉的故障及维修方法

运用电学的基本原理,对数显温控高温炉的故障进行了分析,在实践中总结出各种故障的发生原因、特征现象及解决方法。     

Operating Points in Infinite Nonlinear Networks Approximated by Finite Networks

Given a nonlinear infinite resistive network, an operating point can be determined by approximating the network by finite networks obtained by shorting together various infinite sets of nodes, and then taking a limit of the nodal potential functions of the finite networks. Initially, by taking a completion of the node set of the infinite network under a metric given by the resistances, limit points are obtained that represent generalized ends, which we call ``terminals,' of the infinite network. These terminals can be shorted together to obtain a generalized kind of node, a special case of a 1-node. An operating point will involve Kirchhoff's current law holding at 1-nodes, and so the flow of current into these terminals is studied. We give existence and bounds for an operating point that also has a nodal potential function, which is continuous at the 1-nodes. The existence is derived from the said approximations.

     

Comparing Theories of Infinite Resistive 1-Networks

Flanders' Hilbert space or finite power theory of infinite networks was extended to 1-networks by Zemanian. A new approach uses approximation by finite networks, a-priori bounds from no-gain properties, and Arzela–Ascoli, in a continuous function space. This paper compares, contrasts and reconciles these existence and uniqueness theories.     

Asymptotics for steady‐state voltage potentials in a bidimensional highly contrasted medium with thin layer

We study the behaviour of steady‐state voltage potentials in two kinds of bidimensional media composed of material of complex permittivity equal to 1 (respectively, α) surrounded by a thin membrane of thickness h and of complex permittivity α (respectively, 1). We provide in both cases a rigorous derivation of the asymptotic expansion of steady‐state voltage potentials at any order as h tends to zero, when Neumann boundary condition is imposed on the exterior boundary of the thin layer. Our complex parameter α is bounded but may be very small compared to 1, hence our results describe the asymptotics of steady‐state voltage potentials in all heterogeneous and highly heterogeneous media with thin layer. The asymptotic terms of the potential in the membrane are given explicitly in local coordinates in terms of the boundary data and of the curvature of the domain, while these of the inner potential are the solutions to the so‐called dielectric formulation with appropriate boundary conditions. The error estimates are given explicitly in terms of h and α with appropriate Sobolev norm of the boundary data. We show that the two situations described above lead to completely different asymptotic behaviours of the potentials. Copyright © 2007 John Wiley & Sons, Ltd.     

Methanol vapor‐induced morphology and current–voltage characteristic changes in a cast‐coated nafion film/interdigitated microarray electrode

Methanol vapor‐induced membranous changes in a cast‐coated Nafion thin film were studied through current–voltage (I–V) characteristics with an interdigitated microarray (IDA) electrode and atomic force microscopy (AFM). The obtained I–V curves showed that the as‐prepared Nafion film was stable under humidified nitrogen gas; however, the I–V profile dramatically changed with exposure to methanol vapor. Next, the morphology of the film was compared before and after methanol exposure with AFM images. On the basis of our observations, we found that the as‐prepared film had an irregularly complicated microstructure, whereas the structure became homogeneous in appearance after 30 min of exposure to methanol gas. The alternating‐current conductivity data, showing almost the same magnitude before and after exposure, strongly suggested that the I–V profile shift was based on a change in an electrode reaction mechanism induced by a change in the junction at the Nafion/IDA electrode interface. Furthermore, the methanol vapor‐pre‐exposed Nafion was stable for further exposure to methanol vapor, water vapor, or both. With the stabilized film used in combination with the IDA electrode, a reversible change in the magnitude of the current was observed when the methanol/water vapor ratio was varied. This indicated that the electrode reaction had good reproducibility after the treatment. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 40: 1103–1109, 2002     

Emitting layer analysis of blue thermally activated delayed fluorescence devices using capacitance–voltage method

In this paper, blue thermally activated delayed fluorescence (TADF) organic light-emitting diodes (OLEDs) have been elucidated, with a focus on the degradation characteristics of the emission layer (EML). The operational stability against electrical stress was investigated for two host materials and four doping concentrations, which were used as the EML. The operating stability of the devices was confirmed by comparing the peak capacitance before and after degradation. Devices using bis [2-(diphenyl-phosphino) phenyl] ether oxide (DPEPO) as a host exhibited poor degradation characteristics. However, high stability was confirmed when 3,3-di (9H-carba-zol-9-yl)-biphenyl (mCBP) was used. DPEPO host devices are most resistant against performance degradation when they are doped with 10 wt% 10,10'-(4,4′-sulfonylbis(4,1-phenylene))bis(9,9-dimethyl-9,10-dihydroacridine (DMAC-DPS). We successfully determined the electroluminescence characteristics of the device depending on the host material, as well as the doping concentration, using the capacitance–voltage method.     

船用pH计检定装置的研究

研制了船用pH计检定装置。以基准电压集成电路作为电压标准,以单片机为控制中心,组成船用pH计检定核心部分,控制船用pH计检定装置输出标准电位。检定装置的pH值输出范围:0～14.0000 pH;pH示值误差:0.0003 pH;电压输出范围:-1999.99～+1999.99 mV;电压分辨率:0.01 mV;温度补偿范围:0～99.9℃。     

磁悬浮演示实验仪

应用电磁学理论、机械力学以及电子技术自制了一套磁悬浮演示实验仪.该演示实验仪利用线性霍尔传感器来探测悬浮物体的位移,以达到控制悬浮的目的,添加数码管电压显示电路,定量显示电磁铁的磁性在悬浮过程中随悬浮物位置变化的自动调整,能精确而直观地演示磁悬浮的物理现象.该仪器结构简单、性能稳定、操作方便,能广泛用于课堂演示、课程设...