基于改进的压缩式随机游走算法对静态电源/地网的模拟

将随机游走法和等效电路压缩相结合,对静态P/G网(Power and Ground Networks)进行分析.针对一个大规模的电路,在经过多层的参数提取和建模后,得到静态P/G网模型.首先根据网络的规律性,运用等效电路压缩法将原始的P/G网进行压缩处理,然后运用随机游走法求解,最后利用计算得到的化简网络电压值,通过相关的插值公式得到原网络的电压值.实验数据表明,改进的压缩式随机游走法可有效简化网络的复杂性,节省计算时间,计算速度提高到普通随机游走法的两个数量级以上.     

$lt;i$gt;γ$lt;/i$gt;射线总剂量辐照效应对应变Sip型金属氧化物半导体场效应晶体管阈值电压与跨导的影响研究

分析了双轴应变Si p型金属氧化物半导体场效应晶体管(PMOSFET)在γ射线辐照下载流子的微观输运过程, 揭示了γ射线的作用机理及器件电学特性随辐照总剂量的演化规律, 建立了总剂量辐照条件下的双轴应变Si PMOSFET 阈值电压与跨导等电学特性模型, 并对其进行了模拟仿真. 由仿真结果可知, 阈值电压的绝对值会随着辐照总剂量的积累而增加, 辐照总剂量较低时阈值电压的变化与总剂量基本呈线性关系, 高剂量时趋于饱和; 辐照产生的陷阱电荷增加了沟道区载流子之间的碰撞概率, 导致了沟道载流子迁移率的退化以及跨导的降低. 在此基础上, 进行实验验证, 测试结果表明实验数据与仿真结果基本相符, 为双轴应变Si PMOSFET辐照可靠性的研究和应变集成电路的应用与推广提供了理论依据和实践基础. 关键词： 应变Sip型金属氧化物半导体场效应晶体管 总剂量辐照 阈值电压 跨导     

Model correction for the formation of amorphous silicon by ion implantation

The critical dose at which an implanted amorphous layer in silicon is formed cannot be explained by a previous energy independent model. An energy dependent correction to this model can explain our ESR data as well as other data. The correction is most important for light ions.     

Contact between two plastically deformable crystals: a discrete dislocation dynamics study

It is customary to simplify the analysis of contact between two elastically deformable bodies by treating an equivalent problem where only one body is deformable and the other is rigid. This is possible provided that the gap geometry and the effective elastic modulus of the bodies in the simplified problem are the same as in the original problem. However, the question arises on whether – and to which extent – the simplification is still valid even when (size-dependent) plasticity occurs. Studies using discrete dislocation plasticity have also, so far, addressed simple contact problems where only one body can deform plastically. Here, we extend the analysis to two bodies in contact that can both deform by dislocation plasticity and investigate under which conditions the response agrees with that of an equivalent simplified problem. The bodies in contact are metal single crystals with sinusoidal and flat surface. It is found that the response of two plastically deformable bodies in contact can be simplified to an equivalent problem where one body is rigid and the other can deform plastically. Also, a plasticity size effect is observed, but the effect fades when the platen becomes more plastically deformable.     

A mammographic phantom to measure mean glandular dose by thermoluminescent dosimetry

We have designed a phantom to evaluate mean glandular dose (MGD) as part of the regulatory dosimetry control for mammographic equipment. The phantom is constituted by TLD-100 thermoluminescent dosemeters (TLDs) inserted within semicircular plates of acrylic. Different groups of TLDs are used to determine entrance surface air kerma and half-value layer (HVL). Calibration of both tasks has been performed using a Senographe 2000D system and an ionization chamber. The phantom has been tested in five clinical systems. The HVL and MGD obtained by this method agree, on average, within 3%, with those from standard procedures based on the use of ionization chambers. The phantom MGD measurements have a combined uncertainty better than 10% (k = 1).     

Measurement of photoneutron doses in and out of high-energy X-ray beam of a SATURNE-20 medical linear accelerator by ECE polycarbonate detectors

Photoneutron contaminations in and out of high energy X-ray beams of the medical linear accelerator SATURNE 20 (CGR) of the Radiotherapy Department of Omeed Hospital in Isfahan, Iran, have been determined using 250 μm polycarbonate (PC) dosimeters, in strips or in sheets, processed by electrochemical etching (ECE) using specially designed ECE chambers to etch larger sheets. A two dimensional or topographical distribution of neutron contamination was also determined in a full size beam. The neutron dose equivalents (Hn) in the beam of 18 MV X-rays at 80 cm FSD were determined to be linear functions of X-ray dose equivalents (Hx) up to 1400 cSv. The distribution of the Hn at different X-ray doses showed bell-shape profiles with maxima at the isocenter. The ratios of dose equivalents of neutrons to those of X-rays increased as the field size increased having values of 0.22%, 0.28%, 0.31% and 0.37% for field sizes of 10×10, 20×20, 30×30, and 40×40 cm² respectively. Although such neutron dose equivalents can be corrected for patient treatment, it can cause radiation protection problems for workers where the design of the facility is not well planned.     

The Dependence of IRSL Intensity on Radiation Dose for Samples of Chlorides Contained in Feldspars

The intensity of the luminescence generally increases with radiation dose and measurement of these phenomena can be used to characterise the degree of dependence on beta doses. In this study, in order to test whether this is a significant problem on the optically stimulated luminescence (OSL) studies, the radiation dose response of the OSL signal from samples of chlorides contained in feldspars have been investigated by irradiating the samples with beta doses. The infrared-emitting diodes were used with a wavelength of (880±80) nm, and an IRSL (infrared stimulated luminescence) intensity parametres, m, was described and found m = 1±0.03.     

沉积物中石英ESR测年功率饱和效应的初步研究

介绍了几组沉积物中石英ESR功率饱和效应的基础实验情况,认为在用石英进行ESR测年时,微波功率的选择是一个重要参数,它直接影响累积剂量(AD)的求取,从而严重影响测年结果。在某些特定的地质环境下(如黄土,海洋沉积物),采用比较高的微波功率,可从沉积物石英的E'心得到较老沉积物(大于50万年)可信的ESR年代。     

Equivalence Bimodule Between Non-Commutative Tori

The non-commutative torus C ^*(ⁿ,) is realized as the C*-algebra of sections of a locally trivial C*-algebra bundle over S with fibres isomorphic to C ^*n/S, ₁) for a totally skew multiplier ₁ on ⁿ/S. D. Poguntke [9] proved that A is stably isomorphic to C(S) C(^*( Zⁿ/S, ₁) C(S) A M_kl( C) for a simple non-commutative torus A and an integer kl. It is well-known that a stable isomorphism of two separable C*-algebras is equivalent to the existence of equivalence bimodule between them. We construct an A-C(S) A-equivalence bimodule.     

Distribution of Cardinalities of Row Spaces of Boolean Matrices of Order n

Let R(A) denote the row space of a Boolean matrix A of order n. We show that if n 7, then the cardinality |R(A)| (2^n–1 - 2^n–5, 2^n–1 - 2^n–6) U (2^n–1 - 2^n–6, 2^n–1). This result confirms a conjecture in [1].AMS Subject Classification (1991): 05B20 06E05 15A36Support partially by the Postdoctoral Science Foundation of China.Dedicated to Professor Chao Ko on the occasion of his 90th birthday