第一性原理研究Fe掺杂SnO2材料的光电性质

采用基于第一性原理的线性缀加平面波(FP-LAPW)方法,研究Fe掺杂SnO₂材料电子结构和光学性质,包括电子态密度、能带结构、介电函数和其他一些光学图谱. 研究结果表明,掺Fe后材料均属于直接跃迁半导体,且呈现半金属性;随掺杂浓度增加,费米能级进入价带,带隙逐渐减小,Fe原子之间耦合作用增强;通过掺杂能够在一定程度上改变成键性质,使其具有金属键性质. 光学谱线(吸收谱、消光系数等)与介电函数虚部谱线相对应,均发生蓝移,各峰值与电子跃迁吸收有关,从理论上指出光学性质和电子结构的内在联系. 关键词： 能带结构 态密度 光学性质 介电函数     

Photophysical properties of a series of high luminescent europium complexes with fluorinated ligands

A series of high luminescent europium complexes have been synthesized, such as Eu(TFNB)₃phen (1), Eu(PFNP)₃phen (2), Eu(HFNH)₃phen (3) and Eu(PFND)₃phen (4), which have β-diketone ligands containing fluorinated alkyl chains with different lengths and conjugated naphthyl groups, i.e., 4,4,4-trifluoro-1-(2-naphthyl)butane-1,3-dione (TFNB); 4,4,5,5,5-pentafluoro-1-(2-naphthyl)pentane-1,3-dione (PFNP); 4,4,5,5,6,6,6-heptafluoro-1-(2-naphthyl)hexane-1,3-dione (HFNH) and 4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-pentadecafluoro-1-(2-naphthyl)decane-1,3-dione (PFND). And 10-phenanthroline (phen) is coordinated as the neutral second ligand in 1-4. The crystal structures of 1 and 2 have been studied, which are typical and similar to that of 3. The results of TGA-DTA suggest that these Eu complexes have good thermal stabilities. By means of absorption and (time resolved) emission spectroscopy including determination of luminescence quantum yields, energy transfer dynamics and so on, the following results have been obtained: first, these Eu complexes show characteristic pure red color photoluminescence emission with high quantum efficiencies from the central Eu³⁺ ions through the excitation of the ligands; secondly, photophysical properties of 1, 2, 3 and 4, especially the lifetimes of excited states ⁵D₀ of Eu³⁺ ions and quantum efficiencies are influenced by the different lengths of fluorinated alkyl chains, though the singlets (S₁) and triplets (T₁) of the fluorinated ligands are almost the same.     

Photoluminescence properties of Ba3B′B″2O9 (B′=Mg, Co or Zn and B″=Nb or Ta) ceramics with perovskite structure

Optical properties of near-stoichiometric compositions of Ba₃B′B″₂O₉ (B′=Mg, Co or Zn and B″=Nb or Ta) perovskite type materials were studied by means of photoluminescence (PL) spectroscopy. Ba₃B′B″₂O₉ perovskites belong to the family of perovskite materials that exhibit phase transition from a completely disordered system having space group Pm-3m to a 1:2 ordered one with space group P-3m1. As revealed by X-ray diffraction, deviation from stoichiometry results in the formation of Ba- and Nb-rich phases. Photoluminescence measurements demonstrated the presence of two broad peaks, the position of which depends on secondary phase formation: the first one, attributed to the disordered Pm-3m phase, is positioned at approximately 430 nm and the second band, positioned at lower energies (i.e., longer wavelengths, around 900 nm), was ascribed to the formation of the 1:2 ordered P-3m1 phase. The position of the first peak is influenced by the bond network through distortions in the local environment caused by the specific electronic structure of the B′ cation.     

Intensity-dependent nonlinear optical properties in a modulation-doped single quantum well

In the present work, the changes in the intersubband optical absorption coefficients and the refractive index in a modulation-doped quantum well have been investigated theoretically. Within the envelope function approach and the effective mass approximation, the electronic structure of the quantum well is calculated from the self-consistent numerical solution of the coupled Schrödinger-Poisson equations. The analytical expressions of optical properties are obtained by using the compact density-matrix approach. The numerical results GaAs/Al_xGa_1−xAs are presented for typical modulation-doped quantum well system. The linear, third-order nonlinear and total absorption and refractive index changes depending on the doping concentration are investigated as a function of the incident optical intensity and structure parameters, such as quantum well width and stoichiometric ratio. The results show that the doping concentration, the structure parameters and the incident optical intensity have a great effect on the optical characteristics of these structures.     

Influence of deposition pressure on structural, optical and electrical properties of nc-Si:H films deposited by HW-CVD

Hydrogenated nanocrystalline silicon (nc-Si:H) thin films were deposited using HW-CVD technique at various deposition pressures. Characterisation of these films from Raman spectroscopy revealed that nc-Si:H thin films consist of a mixture of two phases, crystalline phase and amorphous phase containing small Si crystals embedded therein. We observed increase in crystallinity in the films with increase in deposition pressure whereas the size of Si nanocrystals was found ∼2 nm over the entire range of deposition pressure studied. The FTIR spectroscopic analysis showed that with increasing deposition pressure the predominant hydrogen bonding in the films shifts from, Si-H to Si-H₂ and (Si-H₂)_n complexes and the hydrogen content in the films was found in the range 6.2-9.3 at% over the entire range of deposition pressure studied. The photo and dark conductivities results also indicate that the films deposited with increasing deposition pressure get structurally modified. It has been found that the optical energy gap range was between 1.72 and 2.1 eV with static refractive index between 2.85 and 3.24. From the present study it has been concluded that the deposition pressure is a key process parameter to induce the crystallinity in the Si:H thin films using HW-CVD.     

Theoretical study of metal-insulator transition in rhombohedral vanadium sesquioxide

The electronic structure and the metal-insulator transition (MIT) of V₂O₃ are investigated in the framework of density functional theory and GGA+U. It is found that, both the insulating and metallic phases can be realized in rhombohedral structure by varying the on-site Coulomb interaction, and the MIT in V₂O₃ can take place without any structure phase transition. Our calculated energy gap (0.63 eV) agrees with experimental result very well. The metallic phase exhibits high spin (S=1) character, but it becomes S=1/2 in insulating phase. According to our analysis, the Mott-Hubbard and the charge-transfer induce the MIT together, and it supports the mechanism postulated by Tanaka (2002) [11].     

Theoretical study of the structural, elastic, electronic and thermal properties of the MAX phase Nb2SiC

Structural, elastic, electronic and thermal properties of the MAX phase Nb₂SiC are studied by means of a pseudo-potential plane-wave method based on the density functional theory. The optimized zero pressure geometrical parameters are in good agreement with the available theoretical data. The effect of high pressure, up to 40 GPa, on the lattice constants shows that the contractions along the c-axis were higher than those along the a-axis. The elastic constants C_ij and elastic wave velocities are calculated for monocrystal Nb₂SiC. Numerical estimations of the bulk modulus, shear modulus, Young’s modulus, Poisson’s ratio, average sound velocity and Debye temperature for ideal polycrystalline Nb₂SiC aggregates are performed in the framework of the Voigt-Reuss-Hill approximation. The band structure shows that Nb₂SiC is an electrical conductor. The analysis of the atomic site projected densities and the charge density distribution shows that the bonding is of covalent-ionic nature with the presence of metallic character. The density of states at Fermi level is dictated by the niobium d states; Si element has a little effect. Thermal effects on some macroscopic properties of Nb₂SiC are predicted using the quasi-harmonic Debye model, in which the lattice vibrations are taken into account. The variations of the primitive cell volume, volume expansion coefficient, bulk modulus, heat capacity and Debye temperature with pressure and temperature in the ranges of 0-40 GPa and 0-2000 K are obtained successfully.     

Band topology and the quantum spin Hall effect in bilayer graphene

We consider bilayer graphene in the presence of spin-orbit coupling, in order to assess its behavior as a topological insulator. The first Chern number n for the energy bands of single-layer graphene and that for the energy bands of bilayer graphene are computed and compared. It is shown that for a given valley and spin, n for a Bernal-stacked bilayer is doubled with respect to that for the monolayer. This implies that this form of bilayer graphene will have twice as many edge states as single-layer graphene, which we confirm with numerical calculations and analytically in the case of an armchair terminated surface. Bernal-stacked bilayer graphene is a weak topological insulator, whose surface spectrum is susceptible to gap opening under spin-mixing perturbations. We assess the stability of the associated topological bulk state of bilayer graphene under various perturbations. In contrast, we show that AA-stacked bilayer graphene is not a topological insulator unless the spin-orbit coupling is bigger than the interlayer hopping. Finally, we consider an intermediate situation in which only one of the two layers has spin-orbit coupling, and find that although individual valleys have non-trivial Chern numbers for the case of Bernal stacking, the spectrum as a whole is not gapped, so the system is not a topological insulator.     

Film thickness dependence of electro-optic effect in epitaxial BaTiO3 thin films

Based on the phenomenological Landau-Devonshire theory, we investigate the film thickness dependence of ferroelectric and electro-optic properties of epitaxial BaTiO₃ thin films grown on SrTiO₃ and MgO substrates. By using the effective substrate lattice parameter concept, the film thickness dependence of misfit strain is incorporated into the theory. Therefore, the film thickness dependence of ferroelectric and electro-optic properties in epitaxial BaTiO₃ thin films can be explained. Moreover, a large quadratic electro-optic effect was obtained in the BaTiO₃ thin films, which is in good agreement with the experimental result of BaTiO₃ thin films on the MgO substrate.     

The comparison of ZnO nanowire detectors working under two wavelengths of ultraviolet

Schottky-barrier ultraviolet (UV) detectors based on ZnO-nanowires (NWs) were fabricated with Pt as electrodes in this investigation. The ZnO NWs synthesized by the hydrothermal method were characterized by field-emission scanning electron microscopy (FE-SEM), Raman and PL spectroscopy. Photoelectric properties under 254 and 365 nm UV light were investigated. It is found that the photo-response properties of the devices under 365 nm UV light are better than those under 254 nm UV light, which is further illustrated by light transmission theory, energy-band diagram and absorption spectra. The results demonstrate that ZnO NWs detectors with selectivity to near-UV (NUV) light are promising candidates in photoelectric devices.