La1-xCaxMnO3外延薄膜的制备、结构及磁电阻效应

采用溶胶-凝胶旋涂法在单晶LaAlO3 (100)基片上生长了La1-xCaxMnO3(x=0, 0.05, 0.1, 0.2)外延薄膜. 利用X射线衍射仪(XRD)、 原子力显微镜(AFM)、 聚焦离子束系统(FIB)、 X射线光电子能谱分析仪(XPS)、 振动样品磁强计(VSM)和磁性测量系统(MPMS)对样品的结构、 形貌、 价态、 居里温度和磁电阻效应进行了研究. 结果表明, 薄膜为立方钙钛矿结构, 具有明显的(100)外延生长取向和平整的表面. 在居里温度附近, 样品发生铁磁-顺磁转变. 随着Ca2+掺杂量的增加, 样品的居里温度升高, La0.8Ca0.2MnO3的居里温度为264 K. 随温度的变化, 样品发生了金属-绝缘体转变. 样品还具有较大的磁电阻效应, 在H=2.0 T, T=210 K时, La0.95Ca0.05MnO3的磁电阻达到80.9%.     

Comparison of the formation epitaxial graphenes on Si- and process and properties of C-face 6H-SiC substrates

In this paper,the epitaxial graphene layers grown on Si-and C-face 6H-SiC substrates are investigated under a low pressure of 400 Pa at 1600 C.By using atomic force microscopy and Raman spectroscopy,we find that there are distinct differences in the formation and the properties between the epitaxial graphene layers grown on the Si-face and the C-face substrates,including the hydrogen etching process,the stacking type,and the number of layers.Hopefully,our results will be useful for improving the quality of the epitaxial graphene on SiC substrate.     

热丝CVD法在单晶硅衬底上低温外延生长Si和Ge薄膜的研究

采用热丝CVD法在单晶Si衬底上进行了Si和Ge 薄膜的低温外延生长,用XRD和Raman谱对其结构性能进行了分析.结果表明:在衬底温度200 ℃时,Si(111)单晶衬底上外延生长出了Raman峰位置为521.0 cm-1;X射线半峰宽(FWHM)为5.04 cm-1.结晶质量非常接近于体单晶的(111)取向的本征Si薄膜;在衬底温度为300 ℃时,在Si(100)单晶衬底上异质外延,得到了Raman峰位置为300.3 cm-1的Ge薄膜,Ge薄膜的晶体取向为Ge(220).研究表明热丝CVD是一种很好的低温外延薄膜的方法.     

Study of a 4H-SiC epitaxial n-channel MOSFET

Epitaxial channel metal-oxide semiconductor field-effect transistors (MOSFETs) have been proposed as one possible way to avoid the problem of low inversion layers in traditional MOSFETs. This paper presents an equation of maximum depletion width modified which is more accurate than the original equation. A 4H--SiC epitaxial n-channel MOSFET using two-dimensional simulator ISE is simulated. Optimized structure would be realized based on the simulated results for increasing channel mobility.     

Study of Phase Transition Properties in Epitaxial Ferroelectric Film

Based on the transverse Ising model and using decoupling approximation to the Fermi-type Green's function, we study the phase transition properties of the epitaxial ferroelectric film with one substrate. A general recursive equation of the ferroelectric thin film with two n-layer materials is obtained, which enables us to study the phase transition properties for any number layers forepitaxial ferroelectric thin film. With the help of this equation, we analyze the effect of the exchange interaction and the transverse field in the phase diagram, the influence to the polarizations and Curie temperature numerically. The results show that epitaxial ferroelectric film are able to induce a strong increase or decrease of Curie temperature to different exchange interactions and transverse fields within the epitaxial film layers. The theoreticalresults are in reasonable accordance with experimental data of different ferroelectric thin film.     

半导体薄膜材料外延生长的蒙特卡罗模拟

半导体自组织生长量子点是一种新型半导体材料,它在纳米电子学、光电子学和生命科学中有广泛的应用前景,本文讨论了计算机模拟量子点的生长在材料设计中的重要意义,建立动力学蒙特卡罗二维模型, 通过获得的原子沉积的表面图样和对原子簇大小分布的数学统计,得到提高生长温度或者降低沉积速率等量子点外延生长的优化条件.     

Growth and characterisation of Zn:LiNbO3/Mg:LiNbO3 multilayer thin films grown by liquid phase epitaxy

1, 3 and 5 mol% ZnO doped LiNbO₃ film and 2 mol% MgO doped LiNbO₃ multilayer films were grown on the LiNbO₃ (001) substrate by liquid phase epitaxy (LPE) method with a Li₂O‐V₂O₅ system. We examined the optical transmission spectra of the Zn:LiNbO₃ by Fourier Transform‐Infrared Spectrophotometer (FT‐IR). The crystallinity and the lattice mismatch between the Zn:LiNbO₃ film and Mg:LiNbO₃ film was confirmed by x‐ray rocking curve (XRC) and observed the ZnO and MgO distribution in the cross‐section of the multilayer thin films by electron probe micro analyzer (EPMA). Furthermore, the surface morphology of the films was observed using atomic force microscopy (AFM). (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

沉积温度对LaNiO3薄膜结构和性能的影响

采用磁控溅射法在(001)SrTiO3 基片上制备了LaNiO3氧化物薄膜,应用X射线衍射(XRD)、反射式高能电子衍射(RHEED)、原子力显微镜(AFM)、四探针测试仪等技术系统研究了沉积温度对LaNiO3薄膜结构和性能的影响.结果表明在较低的生长温度和较宽的温度范围内(250～400℃)都能得到外延LaNiO3薄膜.输运性质的测量结果表明在其它条件不变的情况下,250℃温度下生长的LaNiO3薄膜具有最高的电导率.     

ZnO纳米棒在Si衬底上外延生长研究

运用热蒸发ZnO粉末法,以金做催化剂,分别在Si(100)和Si(111)两种基片上外延生长了ZnO纳米棒(样品分别标为1#和2#).通过X射线衍射(XRD)和扫描电子显微镜(SEM)分析,结合ZnO与Si的晶格结构特征,从理论上得出了两个样品的晶格匹配关系.1#样品:[0001]ZnO∥[114]Si,[0001]ZnO∥[1-1-4]Si,[0001]ZnO∥[11-4]Si,[0001]ZnO∥[1-14]Si,失配度为1.54;;2#样品:[0001]ZnO∥[111]Si,[21-1-0]ZnO∥[11-0]Si,[1-21-0]ZnO∥[1-01]Si ,[1-1-20]ZnO∥[011-]Si,失配度为18.12;.研究表明Si衬底对ZnO纳米棒生长方向具有调控作用.     

Monitoring of the process of formation of epitaxial films with the use of ultrasoft x-ray spectroscopy

The distinctive features of the atomic and electronic structure of thin surface layers of substances in the process of formation of epitaxial silicon films on silicon are studied using the procedures of reflection and scattering of ultrasoft x-ray radiation. The angular distribution of the scattered x-ray radiation (the scattering indicatrices) and the near fine structure of SiL_2,3 spectra of reflection are investigated. The assumption of the sensitivity of the observed peak of anomalous scattering (the Yoneda peak) of x-ray radiation to the presence, in the surface regions of the materials, of extended double-boundary defects, the defects of packing, grain boundaries, dislocations, etc. is made. It is shown that the experimental procedure used makes it possible to obtain information on the surface layers of substances. Translated from Zhurnal Priklaldnoi Spektroskopii, Vol. 67, No. 4, pp. 496–498, July–August, 2000.