Delta doping in silicon

Two-dimensional doping sheets (“δ-doping”) are integral parts of many novel semiconductor device concepts. Their practical realization in silicon (Si), however, was long delayed by the difficulty to introduce dopants into Si in a well-controlled way during epitaxial growth. Recent advances in the understanding of epitaxial growth and the incorporation of dopants in Si have overcome these difficulties and opened a new field in Si materials and device research. In this article, we review the growth, processing, and characterization of epitaxially grown 5-doped Si. Furthermore, we discuss the electronic subband states of such structures. Finally, we give an overview of device concepts that use 5-doping and analyze their properties.     

Review of a direct epitaxial approach to achieving micro-LEDs

There is a significantly increasing demand of developing augmented reality and virtual reality (AR and VR) devices, where micro-LEDs (μLEDs) with a dimension of ≤ 5 μ m are the key elements. Typically, μLEDs are fabricated by dry-etching technologies, unavoidably leading to a severe degradation in optical performance as a result of dry-etching induced damages. This becomes a particularly severe issue when the dimension of LEDs is ≤ 10 μ m. In order to address the fundamental challenge, the Sheffield team has proposed and then developed a direct epitaxial approach to achieving μLEDs, where the dry-etching technologies for the formation of μLED mesas are not needed anymore. This paper provides a review on this technology and then demonstrates a number of monolithically integrated devices on a single chip using this technology.     

Heterogeneous nucleation of dislocation loops under epitaxial strain

Heterogeneous nucleation of dislocation loops driven by high epitaxial strain describes a possible failure mode of multi-layer superlattice structures. The present paper furnishes a close form solution for the two-dimensional mechanics analysis. A three-dimensional BEM calculation facilitated by a singularity exclusion scheme is conducted for circular dislocation loops nucleated from a spherical void. The results show that the critical epitaxial strain necessary to nucleate a dislocation loop minimizes at an intermediate range of defect sizes.Sponsored by the National Natural Science Foundation of China.     

Ultimate method for unambiguous identification of all donors in epitaxial GaAs and related compounds

When epitaxial GaAs is grown by the method of molecular beam epitaxy (mbe) it would be p-type unless it is intentionally doped lightly during growth by using a particular substitutional donor atom. We have chosen the tin donor in this case to render the specimen n-type. Then the conventional far infrared photoconductivity technique is used to observe the 1s to 2p transition of the electron of the tin donor. The identity of the donor, the energy of the quantum transition as a function of applied magnetic field intensity, and the line shape characteristics of that particular donor then become unquestionable.Work supported by the U.S. Air Force Office of Scientific Research under Contract #AFOSR-78-3708-D.Supported by the National Science Foundation     

Spectroscopic Investigations of Phonons in Epitaxial Graphene

The interaction of graphene with metallic substrates reveals phenomena and properties of great relevance for applications in nanotechnology. In this article, the vibrational characterization by means of various inelastic scattering spectroscopies are surveyed for graphene epitaxially grown on metals and transition carbides. In particular, the manifestations of electron-phonon interaction, such as Kohn anomalies, the evaluation of elastic properties and the nanoscale control of phonon modes are presented and discussed.     

Tuning Optical Properties by Controlled Aggregation: Electroluminescence Assisted by Thermally-Activated Delayed Fluorescence from Thin Films of Crystalline Chromophores

Several photophysical properties of chromophores depend crucially on intermolecular interactions. Thermally-activated delayed fluorescence (TADF) is often influenced by close packing of the chromophore assembly. In this context, the metal-organic framework (MOF) approach has several advantages: it can be used to steer aggregation such that the orientation within aggregated structures can be predicted using rational approaches. We demonstrate this design concept for a DPA-TPE (diphenylamine-tetraphenylethylene) chromophore, which is non-emissive in its solvated state due to vibrational quenching. Turning this DPA-TPE into a ditopic linker makes it possible to grow oriented MOF thin films exhibiting pronounced green electroluminescence with low onset voltages. Measurements at different temperatures clearly demonstrate the presence of TADF. Finally, this work reports that the layer-by-layer process used for MOF thin film deposition allows the integration of the TADF-DPA-TPE in a functioning LED device.     

LDPE／iPP复合膜的附生结晶研究

附生结晶(epitaxy)是指结晶物质在结晶基质上的取向成核和生长。聚合物-聚合物的附生结晶揭示了聚合物间新的结构关系,在高分子物理领域引起了极大兴趣和广泛关注。根据结构关系,聚合物附生结晶主要分为两类,即均相附生结晶(homoepitaxy)和异相附生结晶(het-eroepitaxy)。在异相附生体系中,大多数研究工作集中在全同立构聚丙烯(iPP)与一些锯齿链     

Properties of the GaAs–Si Interface in Epitaxy through an Aluminum Layer

The interaction of elements near the interface during epitaxial growth of monocrystalline GaAs films through an aluminum layer is investigated by the methods of x-ray photoelectronic spectroscopy and secondary-ion mass spectroscopy.