目标表面发射率对红外辐射偏振特性的影响分析

偏振探测不仅可以获得目标的光谱、强度、偏振态以及空间几何形状等参数,还可以获得更丰富的目标信息,有利于改善对目标的探测和识别能力。红外辐射偏振成像是近年来发展起来的一种新的红外探测技术,主要通过目标与场景的红外辐射偏振特性差异进行目标探测与识别。但由于红外辐射偏振信息在传输过程中,其偏振态会受到传输介质的影响,而通常基于实验分析总结目标红外偏振特性的方法难以对偏振传输过程中的影响因素进行估计,也不能定量描述各相关参数对于红外偏振信息的影响。通过微面元理论的双向反射分布函数模型,建立了基于偏振双向反射分布函数的红外辐射偏振传输方程, 推导分析了目标表面发射率对红外辐射偏振度的影响,结果表明：目标表面发射率对目标红外偏振度影响可以忽略;在理论分析基础上,有针对性的开展红外光谱偏振探测试验,试验数据分析与理论推导结论吻合。这表明：材料表面发射率的变化不影响目标表面的红外辐射偏振度。该研究成果有利于提高红外伪装探测的目标识别效率,可为进一步提高红外偏振成像系统的伪装目标探测提供新的途径和方法,如在伪装目标探测识别中,通过探测其表面的红外辐射偏振特性的改变实现伪装目标识别探测。     

多层光变防伪膜的非均匀垂直偏振光反射特性

基于非均匀光波在导电介质中传播时其相移传播方向和振幅衰减方向的不一致性,利用光波动方程的解由电磁场边界条件导出非均匀垂直偏振光在多层超薄金属膜与透明介质膜组合膜系中光波的传输递推公式.为验证方法的可靠性,给出了不同厚度金属膜防伪光变膜系的能量反射率算例,并与现有算法进行对比,结果表明:两种算法得到的能量反射曲线的分布特征具有很好的相似性,但本文算法表现出金属膜具有强的吸收特性和窄带反射效应.     

Self-screening of the polarized electric field in wurtzite gallium nitride along [0001] direction

The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-light-emitting diodes (white LEDs), high electron mobility transistors (HEMTs), and GaN polarization superjunctions. However, the current researches on the polarization mechanism of GaN-based materials are not sufficient. In this paper, we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design (TCAD) simulation. The self-screening effect in Ga-face bulk GaN under ideal and non-ideal conditions is studied respectively. We believe that the formation of high-density two-dimensional electron gas (2DEG) in GaN is the accumulation of screening charges. We also clarify the source and accumulation of the screening charges caused by the GaN self-screening effect in this paper and aim to guide the design and optimization of high-performance GaN-based devices.     

Theory of spin polarization in mesoscopic spin–orbit coupling systems

We establish a general formalism of the bulk spin polarization (BSP) and the current-based spin polarization (CSP) for mesoscopic ferromagnetic and spin–orbit interaction (SOI) semiconducting systems. Based on this formalism, we reveal the basic properties of BSP and CSP and their relationships. The BSP describes the intrinsic spin polarized properties of devices. The CSP depends on both intrinsic parameters of device and the incident current. For the non-spin-polarized incident current with the in-phase spin-phase coherence, CSP equals to BSP. We give analytically the BSP and CSP of several typical nanodevice models, ferromagnetic nanowire, Rashba nanowire and rings. These results provide basic physical behaviors of BSP and CSP and their relationships.     

2 μm Cr,Tm,Ho:YAG激光热退偏效应的数值模拟及实验研究

理论分析了Cr,Tm,Ho:YAG激光晶体的热退偏效应, 模拟计算了该晶体棒端面退偏度的分布, 并进行了偏光干涉实验验证. 结果表明, 数值模拟和实验研究结果完全一致, 热致退偏效应随抽运能量增大而增强, 退偏度分布呈十字形, 最大退偏度发生在晶体棒端面上与起偏器偏振方向成45°方位处. 以此提出了高能量Cr,Tm,Ho:YAG激光器的热退偏补偿方法, 获得了激光脉冲能量提高24%以上的实验效果.     

关于部分偏振光能量传递和偏振态的光线椭圆分析方法

部分偏振光传播时的光强和偏振态变化情况比较复杂, 尤其是当大数值孔径成像时, 光束的偏振态还会影响成像质量. 本文提出一种用于分析部分偏振光能量传递和偏振态的光线椭圆方法, 采用光线椭圆叠加的办法来分析光束在各向同性的均匀介质中传输时能量和偏振态的变化情况, 同时直观性好, 计算量小. 论文最后, 对大数值孔径、 高像质的齐明透镜系统讨论了入射无偏振光的能量、 偏振态变化, 以及偏振效应问题. 结果表明, 大数值孔径使成像光束中TM偏振光强度相对增加, 影响成像对比度; 提高像方介质的折射率, 会改善此种偏振效应问题.     

A polarized micro-Raman study of a 0.65PbMg1/3Nb2/3O3 - 0.35PbTiO3 single crystal

Polarized micro-Raman spectra of a 0.65PbMg_1/3Nb_2/3O₃-0.35PbTiO₃ (0.65PMN-0.35PT) single crystal poled in the [001] direction are obtained in a wide frequency range (50-2000 cm^-1) at different temperatures. The best fit to the Raman spectrum at 77 K is achieved using 17 Lorenzians to convolute into it, and this is proved to be a reasonable fit. According to the group theory and selection rules of overtone and combinational modes, apart from the seven Raman modes that are from first-order Raman scattering, the remaining ones are attributed to being from second-order Raman scattering. A comparison between the experimental results and theoretical predictions shows that they are in satisfactory agreement with each other. Our results indicate that at 77 K the sample belongs to the rhombohedral symmetry with the C_3v⁵ (R3m) space group (Z=1). In our study, on heating, the 0.65PMN-0.35PT single crystal undergoes a rhombohedral to tetragonal to cubic phase transition sequence. The two phase transitions occur at 340 and 440 K, which correspond to the disappearance of the soft mode near 106 cm^-1 recorded in VV polarization and the vanishing of the band around 780 cm^-1 in VH polarization, respectively.     

The stress birefringence images of low angle grain boundaries in 6H‐SiC single crystals

Low angle grain boundaries, also referred to as domain walls, is one of the major structural defects in c‐axis physical vapor transport (PVT) grown hexagonal Silicon Carbide. To investigate the nature of the low angle boundaries, polarized optical microscope was used. The low angle boundary gives bright stress birefringence images under polarizing optical microscope. Periodic extinction of the stress birefringence images occurs when the (0001)‐face SiC is rotated under polarizing optical microscope. The micro‐structure of the low angle boundary is proposed. Using dislocation elastic theory, it is theoretically confirmed that the domains consist of uniform pure edge dislocations with Burgers vectors perpendicular to the dislocation arrays. The simulation results coincide with the experimental observations.     

Spin-polarized current generated by magneto-electrical gating

We theoretically study spin-polarized current through a single electron tunneling transistor (SETT), in which a quantum dot (QD) is coupled to non-magnetic source and drain electrodes via tunnel junctions, and gated by a ferromagnetic (FM) electrode. The I–V characteristics of the device are investigated for both spin and charge currents, based on the non-equilibrium Green's function formalism. The FM electrode generates a magnetic field, which causes a Zeeman spin-splitting of the energy levels in the QD. By tuning the size of the Zeeman splitting and the source–drain bias, a fully spin-polarized current is generated. Additionally, by modulating the electrical gate bias, one can effect a complete switch of the polarization of the tunneling current from spin-up to spin-down current, or vice versa.     

PCM study of the solvent and substituent effects on bond dissociation energies of the O?NO Bond—A DFT study

A PCM continuum model, at the B3LYP, B3P86, and B3PW91 three‐parameter hybrid DFT methods with 6‐311G** basis set, is used to study the bond dissociation energies (BDEs) of benzyl nitrites. Compared the computed results with the experimental values, it is noted that B3PW91 functional is the best method to compute the BDEs of benzyl nitrites. The solvent and substituent effects on the BDEs of the O? NO bond are analyzed, and it is shown that the BDE of the O? NO bond decreases with the increment of the Hammett constants of substituent groups on benzene for benzyl nitrites except C₆H₅CH₂O? NO. © 2011 Wiley Periodicals, Inc. Int J Quantum Chem, 2012