Control of diameter of ZnO nanorods grown by chemical vapor deposition with laser ablation of ZnO

We made a study of controlling diameters of well-aligned ZnO nanorods grown by low-pressure thermal chemical vapor deposition combined with laser ablation of a sintered ZnO target, which was developed by us. Until now, it has been impossible to control diameters of ZnO nanorods, while the growth orientation was maintained well-aligned. In this study we developed a multi-step growth method to fabricate well-aligned nanorods whose diameters could be controlled. Metal Zn vapor and O₂ are used as precursors to grow ZnO nanorods. N₂ is used as a carrier gas for the precursors. A substrate is an n-Si (111) wafer. A sintered ZnO target is placed near the substrate and ablated by a Nd–YAG pulsed laser during ZnO nanorod growth. The growth temperature is 530 C and the pressure is 66.5 Pa. A vertical growth orientation of ZnO nanorods to the substrate is realized in the first-step growth although the diameter cannot be controlled in this step. When an O₂ flow rate is 1.5 sccm, well-aligned nanorods with 100 nm diameter are grown. Next, the second-step nanorods are grown on only the flat tip of the first-step nanorods. The diameters of the second-step nanorods can be controlled by adjusting the O₂ flow rate, and the growth direction is kept the same as that of the first-step nanorods. When the O₂ flow rate in second-step growth is smaller than 0.6 sccm, the diameter of the second-step nanorods is 30–50 nm. When the O₂ flow rate is between 0.75 and 3.0 sccm, the diameter is almost same as that of the first-step nanorods. When the O₂ flow rate is larger than 4.5 sccm, the diameter is increased with increasing O₂ flow rate. Further, the third-step ZnO nanorods with gradually increased diameters can be grown on the second-step nanorods with 1.5 sccm O₂ flow rate and without laser ablation.     

二维过渡金属硫属化合物的大面积制备与应用研究进展

二维过渡金属硫属化合物(TMDs)因具有可调带隙、 谷电子学性质和高催化活性等优点, 在电子学、 光电子学和能源相关领域受到广泛关注. 为了实现以上应用, 实现大面积、 厚度均匀TMDs薄膜的批量制备至关重要. 化学气相沉积法(CVD)是制备大面积均匀、 高质量二维材料普遍使用的方法. 本文从前驱体的供给和衬底的设计两个角度, 总结了目前合成大面积TMDs薄膜的CVD方法, 并讨论了高质量TMDs的生长机制和参数优化方法; 介绍了高质量TMDs在电子学、 光电子学和电/光催化等方面的应用; 讨论了目前合成大面积均匀、 高质量TMDs所面临的挑战, 并对该领域的发展方向进行了展望.     

Rational Development of Guanidinate and Amidinate Based Cerium and Ytterbium Complexes as Atomic Layer Deposition Precursors: Synthesis,Modeling, and Application

Owing to the limited availability of suitable precursors for vapor phase deposition of rare-earth containing thin-film materials, new or improved precursors are sought after. In this study, we explored new precursors for atomic layer deposition (ALD) of cerium (Ce) and ytterbium (Yb) containing thin films. A series of homoleptic tris-guanidinate and tris-amidinate complexes of cerium (Ce) and ytterbium (Yb) were synthesized and thoroughly characterized. The C-substituents on the N-C-N backbone (Me, NMe₂, NEt₂, where Me=methyl, Et=ethyl) and the N-substituents from symmetrical iso-propyl (iPr) to asymmetrical tertiary-butyl (tBu) and Et were systematically varied to study the influence of the substituents on the physicochemical properties of the resulting compounds. Single crystal structures of [Ce(dpdmg)₃] 1 and [Yb(dpdmg)₃] 6 (dpdmg=N,N'-diisopropyl-2-dimethylamido-guanidinate) highlight a monomeric nature in the solid-state with a distorted trigonal prismatic geometry. The thermogravimetric analysis shows that the complexes are volatile and emphasize that increasing asymmetry in the complexes lowers their melting points while reducing their thermal stability. Density functional theory (DFT) was used to study the reactivity of amidinates and guanidinates of Ce and Yb complexes towards oxygen (O₂) and water (H₂O). Signified by the DFT calculations, the guanidinates show an increased reactivity toward water compared to the amidinate complexes. Furthermore, the Ce complexes are more reactive compared to the Yb complexes, indicating even a reactivity towards oxygen potentially exploitable for ALD purposes. As a representative precursor, the highly reactive [Ce(dpdmg)₃] 1 was used for proof-of-principle ALD depositions of CeO₂ thin films using water as co-reactant. The self-limited ALD growth process could be confirmed at 160 °C with polycrystalline cubic CeO₂ films formed on Si(100) substrates. This study confirms that moving towards nitrogen-coordinated rare-earth complexes bearing the guanidinate and amidinate ligands can indeed be very appealing in terms of new precursors for ALD of rare earth based materials.     

Characterization of Nd Doped Films Prepared by Femtosecond Pulsed Laser DepositionSCIEI北大核心CSCD

Thin films of Nd : YAG and Nd : Glass were prepared on Si (100) substrate by pulsed laser deposition technology. The morphology of film surface and cross section, composition, absorption spectrum and photoluminescence (PL) spectra of films were investigated by scanning electron microscope (SEM), energy disperse spectroscopy (EDS), Fourier transform infrared spectrometer(FTIR), optical parametric oscillator(OPO) and grating spectrometer. The results show that both Nd : YAG films and Nd : Glass films grown on the substrates at room temperature are amorphous. Nd : YAG films grown by PLD contain Nd element with 0. 15 at. % stoichiometric proportion. The absorption spectrum of bulk Nd : YAG target rather than deposited films exhibit two absorption peaks at 750 and 808 nm. There are no evident peaks in the photoluminescence spectra curve of Nd : YAG films. However, the photoluminescence spectra of Nd : Glass films with two sharp peaks at the wavelength of 877 and 1 064 nm are observed. It indicates that Nd is doped into glass host as optically active Nd3+ ions when Nd : Glass films grow at room temperature. But for Nd : YAG films, Nd don't incorporate into YAG host as Nd3+ ions.     

非晶碳氧化硅纳米线的合成与光致发光

利用直流电弧放电合成非晶碳氧化硅(SiCO)纳米线,不使用催化剂和模板,独立的SiCO 纳米线沉积在石墨锅的表面．通过XRD、SEM、TEM、XPS、FTIR等对SiCO纳米线进行了表征．结果表明,纳米线长度为20～100 μm,直径为10～100 nm,Si原子同C原子和氧原子分享成键组成SiCO单元．SiCO纳米线的光致发光谱在454和540 nm呈现了强而稳定的白色发光峰． SiCO纳米线的生长机制为等离子辅助气―固生长机制．     

Orientations of ZnO grown on GaN

On semipolar epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X‐ray diffraction. The initially grown ZnO on GaN follows the GaN lattice with the epitaxial relationship of // and The other oriented ZnO domains then grow on faceted with and with good coherency with the ‐oriented grains. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Effect of the thickness of InGaN interlayer on a-plane GaN epilayer

In this paper,we use the a-plane InGaN interlayer to improve the property of a-plane GaN.Based on the a-InGaN interlayer,a template exhibits that a regular,porous structure,which acts as a compliant effect,can be obtained to release the strain caused by the lattice and thermal mismatch between a-GaN and r-sapphire.We find that the thickness of InGaN has a great influence on the growth of a-GaN.The surface morphology and crystalline quality both are first improved and then deteriorated with increasing the thickness of the InGaN interlayer.When the InGaN thickness exceeds a critical point,the a-GaN epilayer peels off in the process of cooling down to room temperature.This is an attractive way of lifting off a-GaN films from the sapphire substrate.     

Atmospheric pressure plasma treatment on graphene grown by chemical vapor deposition

We demonstrate the surface treatment of graphene using an atmospheric pressure plasma jet (APPJ) system. The graphene was synthesized by a thermal chemical vapor deposition with methane gas. A Mo foil and a SiO₂ wafer covered by Ni films were employed to synthesize monolayer and mixed-layered graphene, respectively. The home-built APPJ system was ignited using nitrogen gas to functionalize the graphene surface, and we studied the effect of different treatment times and interdistance between the plasma jet and the graphene surface. After the APPJ treatment, the hydrophobic character of graphene surface changed to hydrophilic. We found that the change is due to the formation of functionalities such as hydroxyl and carboxyl groups. Furthermore, it is worth noting that the nitrogen plasma treatment induced charge doping on graphene, and the pyridinic nitrogen component in the X-ray photoelectron spectroscopy spectrum was significantly enhanced. We conclude that the atmospheric pressure plasma treatment enables controlling the graphene properties without introducing surface defects.     

β-PbO2/TiO2纳米管电极的制备及其电催化降解苯酚

采用阳极氧化法和脉冲电沉积制备出β-PbO2改性TiO2纳米管(β-PbO2/TiO2-NTs)电极,通过扫描电子显微镜(SEM)、X射线衍射(XRD)和X射线光电子能谱(XPS)等技术手段对制备的β-PbO2/TiO2-NTs电极的表面形貌和结构进行了表征。结果表明,该方法成功地将β-PbO2纳米颗粒分散在TiO2纳米管中,通过电催化降解苯酚评价了β-PbO2/TiO2-NTs电极的电催化活性,实验结果表明,在TiO2-NTs中电沉积β-PbO2提高了电极的电催化活性,对苯酚的降解达到83%。