Zur Empfindlichkeit von Festkörperspurdetektoren

Es werden verschiedene Festkörperspurdetektor-Materialien hinsichtlich ihrer Empfindlichkeit gegenüber Bestrahlung mit α-Teilchen und zum Teil auch gegenüber Protonen und Deuteronen verglichen. Die speziell für den Einsutz als Festkörperspurdetektor hergestellten Zellulosenitrat-Folien wurden als empfindlichste Detektoren ermittelt.     

The Determination of 222Rn in Drilling Fluids of the KTB Pilot Borehole Using SSNTD Techniques

²²²Rn dissolved in drilling fluids of the KTB (Kontinentales Tiefbohrprogramm der Bundesrepublik Deutschland) pilot hole has been determined using solid state nuclear track detector (SSNTD) technique:The α-sensitive SSNTD CR-39 was used to measure the a-activity of ²²²Rn. Well-defined conditions for Rn-measurements could be established by employing a mica nuclear track microfilter to separate the detector containing air volume from the volume containing the water. This technique has been applied to determine quantitatively the ²²² Rn-concentration as a function of depth of the borehole down to 4000 m.     

Reaktion von Pyridin-2-Carbonsäure Mit Tetrabutylammonium-Tetrachloro-Nitridotechnetat(VI) Sowie Tetrabutylammonium-Tetrachlorooxotechnetat (V)

Abstract

The reaction of 2-pyridine carboxylic acid (Hpic) with (n-Bu₄N)[TcNCl₄] and (n-Bu₄N)[TcOCl₄] in ethanol and methanol, respectively, yields the dinuclear μ-oxo complex [(pic)₂NTc-O-TcN(pic)(Hpic)Cl] and the monomeric complex [TcO(pic)₂Cl].

Visible and infrared spectroscopy, ESR, ¹H-NMR and ⁹⁹Tc-NMR have been used to characterize the new compounds. The most important field of application for the new compounds synthesized is radiodiagnostics.     

Low-energy electron beam source

Experimental results of research into a ferroelectric-plasma-source-assisted hollow anode (HA) discharge as a source of low-energy electron beams are presented. To generate electron beams, the HA auto-bias negative voltage was achieved by the discharge current flowing through the resistor connecting the HA and the grounded electrode. It is shown that this method allows reliable and reproducible generation of low-energy electron beams with electron energy of several hundreds of eV, electron current density up to several A/cm² and pulse duration of several tens of microseconds.     

Runaway electron generation decrease during a major disruption by limiter biasing in tokamaks

The high-energy current of runaway electrons during a major disruption in tokamak reactors can cause serious damage to the first wall of the reactors and reduce their life time. Therefore, finding a method to minimize runaway electron generation during a major disruption is much needed. Tokamak limiter biasing is one of the methods that can be used for controlling the radial electric field and can induce a transition to an improved confinement state. This paper attempts to examine the effect of limiter biasing on the generation of runaway electrons during a major disruption. To do so, a horizontal biased limiter placed on the tokamak was used. Main parameters such as plasma current, loop voltage, emitted hard X-ray intensity, magnetohydrodynamic (MHD) oscillation and H_α radiation and spectrum of hard X-rays, in the presence and absence of negative and positive limiter biasing, were measured. The results show that the application of limiter biasing during a major disruption can reduce runaway electron generation.     

EPR of Cu2+-doped Cs2CO3 and CsHCO3: evidence of the Jahn–Teller effect

Cu²⁺-doped Cs₂CO₃ and CsHCO₃ single crystals were investigated by electron paramagnetic resonance between 113–273 and 173–313 K, respectively. For both single crystals, two sites were observed for the Cu²⁺ at ambient temperature for arbitrary orientations of the single crystals in the magnetic field. However, when the temperature is varied, the spectra indicate the equivalence of the two sites at 225 and 240 K for the single crystals, respectively, to the above order. Below and above these temperatures two sites for Cu²⁺ appear, and below 133 and 173 K the signals do not vary and two sites were always observed. This is attributed to the transition of the dynamic Jahn–Teller effect to a static situation at lower temperatures. Cu²⁺ seems to replace Cs⁺ and the charge compensation is fulfilled by another Cs⁺. Spin-Hamiltonian parameters for both single crystals at ambient temperature are reported and discussed.     

Investigation of radiation defects in Fe-Cr alloy

Abstract

The kinetics of radiation defect accumulation and subsequent recovery during/after electron irradiation below 273 K, at 323 K and 373 K were investigated for the Fe-15.7 at.% Cr using positron annihilation measurements at room temperature. Formation of vacancy clusters was observed at all of the irradiation temperatures. The formation of clusters and kinetics of their accumulation point to mobility of vacancies at least at room temperature. The cluster rearrangement and variations in the cluster configuration take place during annealing.     

Kinetic parameters,collision rates,energy exchanges and transport coefficients of non-thermal electrons in premixed flames at sub-breakdown electric field strengths

The effects of an electric field on the collision rates, energy exchanges and transport properties of electrons in premixed flames are investigated via solutions to the Boltzmann kinetic equation. The case of high electric field strength, which results in high-energy, non-thermal electrons, is analysed in detail at sub-breakdown conditions. The rates of inelastic collisions and the energy exchange between electrons and neutrals in the reaction zone of the flame are characterised quantitatively. The analysis includes attachment, ionisation, impact dissociation, and vibrational and electronic excitation processes. Our results suggest that Townsend breakdown occurs for E/N = 140 Td. Vibrational excitation is the dominant process up to breakdown, despite important rates of electronic excitation of CO, CO₂ and N₂ as well as impact dissociation of O₂ being apparent from 50 Td onwards. Ohmic heating in the reaction zone is found to be negligible (less than 2% of peak heat release rate) up to breakdown field strengths for realistic electron densities equal to 10¹⁰ cm^?3. The observed trends are largely independent of equivalence ratio. In the non-thermal regime, electron transport coefficients are insensitive to mixture composition and approximately constant across the flame, but are highly dependent on the electric field strength. In the thermal limit, kinetic parameters and transport coefficients vary substantially across the flame due to the spatially inhomogeneous concentration of water vapour. A practical approach for identifying the plasma regime (thermal versus non-thermal) in studies of electric field effects on flames is proposed.     

Structural modification in swift heavy ion irradiated muscovite mica

Two-layer monoclinic(2 M) muscovite mica sheets with a thickness of 12 μm are irradiated with Sn ions at room temperature with electronic energy loss( dE/dx)_e of 14.7 keV/nm. The ion fluence is varied between 1×10~(11) and1×10~(13) ions/cm~2. Structural transition in irradiated mica is investigated by x-ray diffraction(XRD). The main diffraction peaks shift to the high angles, and the inter-planar distance decreases due to swift heavy ion(SHI) irradiation. Dehydration takes place in mica during SHI irradiation and mica with one-layer monoclinic(1 M) structure is thought to be generated in 2 M mica after SHI irradiation. In addition, micro stress and damage cross section in irradiated mica are analyzed according to XRD data. High resolution transmission electron microscopy(HRTEM) is used on the irradiated mica to obtain the detailed information about the latent tracks and structural modifications directly. The latent track in mica presents an amorphous zone surrounded by strain contrast shell, which is associated with the residual stress in irradiated mica.     

Simulation study of InAlN/GaN high-electron mobility transistor with AlInN back barrier

In this work, we use a 3-nm-thick Al_(0.64)In_(0.36)N back-barrier layer in In_(0.17)Al_(0.83) N/Ga N high-electron mobility transistor(HEMT) to enhance electron confinement. Based on two-dimensional device simulations, the influences of Al_(0.64)In_(0.36) N back-barrier on the direct-current(DC) and radio-frequency(RF) characteristics of In AlN/GaN HEMT are investigated, theoretically. It is shown that an effective conduction band discontinuity of approximately 0.5 eV is created by the 3-nm-thick Al_(0.64)In_(0.36) N back-barrier and no parasitic electron channel is formed. Comparing with the conventional In AlN/GaN HEMT, the electron confinement of the back-barrier HEMT is significantly improved, which allows a good immunity to short-channel effect(SCE) for gate length decreasing down to 60 nm(9-nm top barrier). For a 70-nm gate length, the peak current gain cut-off frequency( f_T) and power gain cut-off frequency( f_(max)) of the back-barrier HEMT are172 GHz and 217 GHz, respectively, which are higher than those of the conventional HEMT with the same gate length.